Overview
The 2N7002E is a small signal, N-channel MOSFET produced by Vishay Siliconix. This device is characterized by its low on-resistance, small footprint, and trench technology, making it suitable for a variety of applications. The 2N7002E is housed in a SOT-23 package and is Pb-free, halogen-free, and RoHS compliant. It operates with a drain-to-source voltage (VDS) of up to 60 V and a drain current (ID) of up to 310 mA, making it versatile for different electronic circuits.
Key Specifications
| Parameter | Symbol | Test Conditions | Typical Value | Unit |
|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 10 µA | 60 | V |
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 µA | 2 | V |
| Drain Current | ID | VGS = 10 V | 310 | mA |
| On-Resistance | RDS(on) | VGS = 10 V, ID = 0.25 A | 3 | Ω |
| Input Capacitance | Ciss | VGS = 0 V, VDS = 5 V, f = 1 MHz | 25 | pF |
| Turn-On Time | td(on) | VDD = 10 V, RL = 40 Ω, ID ≈ 250 mA, VGEN = 10 V, Rg = 10 Ω | 13 | ns |
| Turn-Off Time | td(off) | VDD = 10 V, RL = 40 Ω, ID ≈ 250 mA, VGEN = 10 V, Rg = 10 Ω | 18 | ns |
Key Features
- Low on-resistance (RDS(on)) of 3 Ω at VGS = 10 V and ID = 0.25 A.
- Low gate-threshold voltage (VGS(th)) of 2 V (typical).
- Low input capacitance of 25 pF.
- Fast switching speed with turn-on and turn-off times of 13 ns and 18 ns respectively.
- Halogen-free and RoHS compliant, making it environmentally friendly.
- Small footprint SOT-23 surface mount package.
- Trench technology for improved performance.
- AEC-Q101 qualified and PPAP capable for automotive and other demanding applications).
Applications
- Direct logic-level interface: TTL/CMOS.
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and other transistors.
- Battery-operated systems.
- Solid-state relays.
- Low side load switches).
- Level shift circuits).
- DC-DC converters).
- Portable applications such as DSC, PDA, and cell phones).
Q & A
- What is the maximum drain-to-source voltage (VDS) of the 2N7002E MOSFET?
The maximum drain-to-source voltage (VDS) is 60 V).
- What is the typical gate-threshold voltage (VGS(th)) of the 2N7002E?
The typical gate-threshold voltage (VGS(th)) is 2 V).
- What is the on-resistance (RDS(on)) of the 2N7002E at VGS = 10 V and ID = 0.25 A?
The on-resistance (RDS(on)) is 3 Ω at VGS = 10 V and ID = 0.25 A).
- What is the maximum drain current (ID) of the 2N7002E?
The maximum drain current (ID) is 310 mA).
- Is the 2N7002E RoHS compliant?
Yes, the 2N7002E is RoHS compliant and halogen-free).
- What package type is the 2N7002E available in?
The 2N7002E is available in a SOT-23 surface mount package).
- What are some typical applications of the 2N7002E?
Typical applications include direct logic-level interface, drivers for relays and solenoids, battery-operated systems, solid-state relays, low side load switches, level shift circuits, DC-DC converters, and portable applications).
- Is the 2N7002E suitable for automotive applications?
Yes, the 2N7002E is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications).
- What is the turn-on time (td(on)) of the 2N7002E?
The turn-on time (td(on)) is approximately 13 ns).
- What is the turn-off time (td(off)) of the 2N7002E?
The turn-off time (td(off)) is approximately 18 ns).
