Overview
The STD5N52K3 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing their advanced MDmesh K3 technology. This device is designed to offer superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications. The STD5N52K3 is packaged in a DPAK (TO-252) package and is available in various environmental compliance grades, including ECOPACK options.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Order Code | STD5N52K3 | |
VDS (Drain-source voltage) | 525 | V |
RDS(on) max. (Static drain-source on-resistance) | 1.5 | Ω |
ID (Drain current, continuous at TC = 25 °C) | 4.4 | A |
IDM (Drain current, pulsed) | 17.6 | A |
VGS (Gate-source voltage) | ±30 | V |
PTOT (Total power dissipation at TC = 25 °C) | 70 | W |
Tstg (Storage temperature range) | -55 to 150 | °C |
TJ (Operating junction temperature range) | -55 to 150 | °C |
RthJC (Thermal resistance, junction-to-case) | 1.79 | °C/W |
RthJA (Thermal resistance, junction-to-ambient) | 50 | °C/W |
Key Features
- Extremely low on-resistance (RDS(on) = 1.2 Ω typ.)
- High avalanche capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
- 100% avalanche tested
- Extremely high dv/dt capability
Applications
The STD5N52K3 is suitable for various switching applications due to its high performance and robust characteristics. These include but are not limited to:
- Power supplies and DC-DC converters
- Motor control and drives
- High-frequency switching applications
- Aerospace and automotive systems requiring high reliability
Q & A
- What is the maximum drain-source voltage (VDS) of the STD5N52K3?
The maximum drain-source voltage (VDS) is 525 V.
- What is the typical on-resistance (RDS(on)) of the STD5N52K3?
The typical on-resistance (RDS(on)) is 1.2 Ω.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 4.4 A.
- What is the maximum pulsed drain current (IDM) of the STD5N52K3?
The maximum pulsed drain current (IDM) is 17.6 A.
- What is the thermal resistance from junction to case (RthJC) of the STD5N52K3?
The thermal resistance from junction to case (RthJC) is 1.79 °C/W.
- What is the storage temperature range for the STD5N52K3?
The storage temperature range is -55 to 150 °C.
- What are the key features of the STD5N52K3?
The key features include extremely low on-resistance, high avalanche capability, very low intrinsic capacitance, improved diode reverse recovery characteristics, and Zener protection.
- What are the typical applications for the STD5N52K3?
The STD5N52K3 is typically used in switching applications, power supplies, DC-DC converters, motor control, and high-frequency switching applications.
- What package type is the STD5N52K3 available in?
The STD5N52K3 is available in a DPAK (TO-252) package.
- Does the STD5N52K3 have environmental compliance options?
Yes, the STD5N52K3 is available in various environmental compliance grades, including ECOPACK options.