STD5N52K3
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STMicroelectronics STD5N52K3

Manufacturer No:
STD5N52K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 525V 4.4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD5N52K3 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing their advanced MDmesh K3 technology. This device is designed to offer superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications. The STD5N52K3 is packaged in a DPAK (TO-252) package and is available in various environmental compliance grades, including ECOPACK options.

Key Specifications

Parameter Value Unit
Order Code STD5N52K3
VDS (Drain-source voltage) 525 V
RDS(on) max. (Static drain-source on-resistance) 1.5 Ω
ID (Drain current, continuous at TC = 25 °C) 4.4 A
IDM (Drain current, pulsed) 17.6 A
VGS (Gate-source voltage) ±30 V
PTOT (Total power dissipation at TC = 25 °C) 70 W
Tstg (Storage temperature range) -55 to 150 °C
TJ (Operating junction temperature range) -55 to 150 °C
RthJC (Thermal resistance, junction-to-case) 1.79 °C/W
RthJA (Thermal resistance, junction-to-ambient) 50 °C/W

Key Features

  • Extremely low on-resistance (RDS(on) = 1.2 Ω typ.)
  • High avalanche capability
  • Very low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener-protected
  • 100% avalanche tested
  • Extremely high dv/dt capability

Applications

The STD5N52K3 is suitable for various switching applications due to its high performance and robust characteristics. These include but are not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching applications
  • Aerospace and automotive systems requiring high reliability

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD5N52K3?

    The maximum drain-source voltage (VDS) is 525 V.

  2. What is the typical on-resistance (RDS(on)) of the STD5N52K3?

    The typical on-resistance (RDS(on)) is 1.2 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 4.4 A.

  4. What is the maximum pulsed drain current (IDM) of the STD5N52K3?

    The maximum pulsed drain current (IDM) is 17.6 A.

  5. What is the thermal resistance from junction to case (RthJC) of the STD5N52K3?

    The thermal resistance from junction to case (RthJC) is 1.79 °C/W.

  6. What is the storage temperature range for the STD5N52K3?

    The storage temperature range is -55 to 150 °C.

  7. What are the key features of the STD5N52K3?

    The key features include extremely low on-resistance, high avalanche capability, very low intrinsic capacitance, improved diode reverse recovery characteristics, and Zener protection.

  8. What are the typical applications for the STD5N52K3?

    The STD5N52K3 is typically used in switching applications, power supplies, DC-DC converters, motor control, and high-frequency switching applications.

  9. What package type is the STD5N52K3 available in?

    The STD5N52K3 is available in a DPAK (TO-252) package.

  10. Does the STD5N52K3 have environmental compliance options?

    Yes, the STD5N52K3 is available in various environmental compliance grades, including ECOPACK options.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):525 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:545 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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STB5N52K3
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MOSFET N-CH 525V 4.4A D2PAK
STU5N52K3
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Similar Products

Part Number STD5N52K3 STD6N52K3 STD5N62K3 STD7N52K3 STD4N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 525 V 525 V 620 V 525 V 525 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) 5A (Tc) 4.2A (Tc) 6A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V 1.2Ohm @ 2.5A, 10V 1.6Ohm @ 2.1A, 10V 980mOhm @ 3.1A, 10V 2.6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V - 26 nC @ 10 V 34 nC @ 10 V 2 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 545 pF @ 100 V - 680 pF @ 50 V 737 pF @ 100 V 334 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 70W (Tc) 70W (Tc) 70W (Tc) 90W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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