STD4N52K3
  • Share:

STMicroelectronics STD4N52K3

Manufacturer No:
STD4N52K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 525V 2.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD4N52K3 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH3(TM) family, known for its advanced technology that enhances power efficiency and reliability. The STD4N52K3 is packaged in a DPAK (TO-252) package, making it suitable for a variety of power management applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 525 V
ID (Drain Current) 2.5 A
RDS(on) (On-Resistance) 2.1 Ω
PD (Power Dissipation) - -
TJ (Junction Temperature) -150 to 175 °C
Package DPAK (TO-252) -

Key Features

  • 100% avalanche tested, ensuring robustness against high-energy pulses.
  • Extremely high dv/dt capability, making it suitable for high-frequency applications.
  • Very low intrinsic capacitance, which helps in reducing switching losses.
  • Improved diode reverse recovery characteristics, enhancing overall efficiency.
  • SuperMESH3(TM) technology for superior performance and reliability.

Applications

The STD4N52K3 is designed for use in various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • Aerospace and defense systems.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STD4N52K3?

    The maximum drain-source voltage (VDS) is 525 V.

  2. What is the typical on-resistance of the STD4N52K3?

    The typical on-resistance (RDS(on)) is 2.1 Ω.

  3. What package type is the STD4N52K3 available in?

    The STD4N52K3 is available in a DPAK (TO-252) package.

  4. What are the key features of the SuperMESH3(TM) technology used in the STD4N52K3?

    The SuperMESH3(TM) technology includes 100% avalanche testing, high dv/dt capability, low intrinsic capacitance, and improved diode reverse recovery characteristics.

  5. What are some common applications for the STD4N52K3?

    Common applications include power supplies, DC-DC converters, motor control, industrial automation, aerospace, and automotive systems.

  6. What is the maximum junction temperature for the STD4N52K3?

    The maximum junction temperature (TJ) is 175°C.

  7. Is the STD4N52K3 suitable for high-frequency applications?
  8. What is the typical drain current of the STD4N52K3?

    The typical drain current (ID) is 2.5 A.

  9. Does the STD4N52K3 have any special testing or certifications?
  10. How does the SuperMESH3(TM) technology improve the performance of the STD4N52K3?

    The SuperMESH3(TM) technology enhances performance by reducing switching losses, improving diode reverse recovery characteristics, and providing high dv/dt capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):525 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:334 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.72
301

Please send RFQ , we will respond immediately.

Same Series
STF4N52K3
STF4N52K3
MOSFET N-CH 525V 2.5A TO220FP
STU4N52K3
STU4N52K3
MOSFET N-CH 525V 2.5A IPAK
STP4N52K3
STP4N52K3
MOSFET N-CH 525V 2.5A TO220

Similar Products

Part Number STD4N52K3 STD6N52K3 STD4N62K3 STD5N52K3 STD7N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 525 V 525 V 620 V 525 V 525 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 5A (Tc) 3.8A (Tc) 4.4A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.25A, 10V 1.2Ohm @ 2.5A, 10V 1.95Ohm @ 1.9A, 10V 1.5Ohm @ 2.2A, 10V 980mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 10 V - 14 nC @ 10 V 17 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 334 pF @ 100 V - 450 pF @ 50 V 545 pF @ 100 V 737 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 45W (Tc) 70W (Tc) 70W (Tc) 70W (Tc) 90W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
Z0107NA 5AL2
Z0107NA 5AL2
STMicroelectronics
TRIAC SENS GATE 800V 1A TO92
STN1NF20
STN1NF20
STMicroelectronics
MOSFET N-CH 200V 1A SOT-223
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO