STD4N52K3
  • Share:

STMicroelectronics STD4N52K3

Manufacturer No:
STD4N52K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 525V 2.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD4N52K3 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH3(TM) family, known for its advanced technology that enhances power efficiency and reliability. The STD4N52K3 is packaged in a DPAK (TO-252) package, making it suitable for a variety of power management applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 525 V
ID (Drain Current) 2.5 A
RDS(on) (On-Resistance) 2.1 Ω
PD (Power Dissipation) - -
TJ (Junction Temperature) -150 to 175 °C
Package DPAK (TO-252) -

Key Features

  • 100% avalanche tested, ensuring robustness against high-energy pulses.
  • Extremely high dv/dt capability, making it suitable for high-frequency applications.
  • Very low intrinsic capacitance, which helps in reducing switching losses.
  • Improved diode reverse recovery characteristics, enhancing overall efficiency.
  • SuperMESH3(TM) technology for superior performance and reliability.

Applications

The STD4N52K3 is designed for use in various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • Aerospace and defense systems.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STD4N52K3?

    The maximum drain-source voltage (VDS) is 525 V.

  2. What is the typical on-resistance of the STD4N52K3?

    The typical on-resistance (RDS(on)) is 2.1 Ω.

  3. What package type is the STD4N52K3 available in?

    The STD4N52K3 is available in a DPAK (TO-252) package.

  4. What are the key features of the SuperMESH3(TM) technology used in the STD4N52K3?

    The SuperMESH3(TM) technology includes 100% avalanche testing, high dv/dt capability, low intrinsic capacitance, and improved diode reverse recovery characteristics.

  5. What are some common applications for the STD4N52K3?

    Common applications include power supplies, DC-DC converters, motor control, industrial automation, aerospace, and automotive systems.

  6. What is the maximum junction temperature for the STD4N52K3?

    The maximum junction temperature (TJ) is 175°C.

  7. Is the STD4N52K3 suitable for high-frequency applications?
  8. What is the typical drain current of the STD4N52K3?

    The typical drain current (ID) is 2.5 A.

  9. Does the STD4N52K3 have any special testing or certifications?
  10. How does the SuperMESH3(TM) technology improve the performance of the STD4N52K3?

    The SuperMESH3(TM) technology enhances performance by reducing switching losses, improving diode reverse recovery characteristics, and providing high dv/dt capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):525 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:334 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.72
301

Please send RFQ , we will respond immediately.

Same Series
STF4N52K3
STF4N52K3
MOSFET N-CH 525V 2.5A TO220FP
STU4N52K3
STU4N52K3
MOSFET N-CH 525V 2.5A IPAK
STP4N52K3
STP4N52K3
MOSFET N-CH 525V 2.5A TO220

Similar Products

Part Number STD4N52K3 STD6N52K3 STD4N62K3 STD5N52K3 STD7N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 525 V 525 V 620 V 525 V 525 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 5A (Tc) 3.8A (Tc) 4.4A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.25A, 10V 1.2Ohm @ 2.5A, 10V 1.95Ohm @ 1.9A, 10V 1.5Ohm @ 2.2A, 10V 980mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 10 V - 14 nC @ 10 V 17 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 334 pF @ 100 V - 450 pF @ 50 V 545 pF @ 100 V 737 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 45W (Tc) 70W (Tc) 70W (Tc) 70W (Tc) 90W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
LDL1117S33R
LDL1117S33R
STMicroelectronics
IC REG LINEAR 3.3V 1.2A SOT223
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN