STD4N52K3
  • Share:

STMicroelectronics STD4N52K3

Manufacturer No:
STD4N52K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 525V 2.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD4N52K3 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH3(TM) family, known for its advanced technology that enhances power efficiency and reliability. The STD4N52K3 is packaged in a DPAK (TO-252) package, making it suitable for a variety of power management applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 525 V
ID (Drain Current) 2.5 A
RDS(on) (On-Resistance) 2.1 Ω
PD (Power Dissipation) - -
TJ (Junction Temperature) -150 to 175 °C
Package DPAK (TO-252) -

Key Features

  • 100% avalanche tested, ensuring robustness against high-energy pulses.
  • Extremely high dv/dt capability, making it suitable for high-frequency applications.
  • Very low intrinsic capacitance, which helps in reducing switching losses.
  • Improved diode reverse recovery characteristics, enhancing overall efficiency.
  • SuperMESH3(TM) technology for superior performance and reliability.

Applications

The STD4N52K3 is designed for use in various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • Aerospace and defense systems.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STD4N52K3?

    The maximum drain-source voltage (VDS) is 525 V.

  2. What is the typical on-resistance of the STD4N52K3?

    The typical on-resistance (RDS(on)) is 2.1 Ω.

  3. What package type is the STD4N52K3 available in?

    The STD4N52K3 is available in a DPAK (TO-252) package.

  4. What are the key features of the SuperMESH3(TM) technology used in the STD4N52K3?

    The SuperMESH3(TM) technology includes 100% avalanche testing, high dv/dt capability, low intrinsic capacitance, and improved diode reverse recovery characteristics.

  5. What are some common applications for the STD4N52K3?

    Common applications include power supplies, DC-DC converters, motor control, industrial automation, aerospace, and automotive systems.

  6. What is the maximum junction temperature for the STD4N52K3?

    The maximum junction temperature (TJ) is 175°C.

  7. Is the STD4N52K3 suitable for high-frequency applications?
  8. What is the typical drain current of the STD4N52K3?

    The typical drain current (ID) is 2.5 A.

  9. Does the STD4N52K3 have any special testing or certifications?
  10. How does the SuperMESH3(TM) technology improve the performance of the STD4N52K3?

    The SuperMESH3(TM) technology enhances performance by reducing switching losses, improving diode reverse recovery characteristics, and providing high dv/dt capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):525 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:334 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.72
301

Please send RFQ , we will respond immediately.

Same Series
STF4N52K3
STF4N52K3
MOSFET N-CH 525V 2.5A TO220FP
STU4N52K3
STU4N52K3
MOSFET N-CH 525V 2.5A IPAK
STP4N52K3
STP4N52K3
MOSFET N-CH 525V 2.5A TO220

Similar Products

Part Number STD4N52K3 STD6N52K3 STD4N62K3 STD5N52K3 STD7N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 525 V 525 V 620 V 525 V 525 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 5A (Tc) 3.8A (Tc) 4.4A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.25A, 10V 1.2Ohm @ 2.5A, 10V 1.95Ohm @ 1.9A, 10V 1.5Ohm @ 2.2A, 10V 980mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 10 V - 14 nC @ 10 V 17 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 334 pF @ 100 V - 450 pF @ 50 V 545 pF @ 100 V 737 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 45W (Tc) 70W (Tc) 70W (Tc) 70W (Tc) 90W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3

Related Product By Brand

STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON