STD4N52K3
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STMicroelectronics STD4N52K3

Manufacturer No:
STD4N52K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 525V 2.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD4N52K3 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH3(TM) family, known for its advanced technology that enhances power efficiency and reliability. The STD4N52K3 is packaged in a DPAK (TO-252) package, making it suitable for a variety of power management applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 525 V
ID (Drain Current) 2.5 A
RDS(on) (On-Resistance) 2.1 Ω
PD (Power Dissipation) - -
TJ (Junction Temperature) -150 to 175 °C
Package DPAK (TO-252) -

Key Features

  • 100% avalanche tested, ensuring robustness against high-energy pulses.
  • Extremely high dv/dt capability, making it suitable for high-frequency applications.
  • Very low intrinsic capacitance, which helps in reducing switching losses.
  • Improved diode reverse recovery characteristics, enhancing overall efficiency.
  • SuperMESH3(TM) technology for superior performance and reliability.

Applications

The STD4N52K3 is designed for use in various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • Aerospace and defense systems.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STD4N52K3?

    The maximum drain-source voltage (VDS) is 525 V.

  2. What is the typical on-resistance of the STD4N52K3?

    The typical on-resistance (RDS(on)) is 2.1 Ω.

  3. What package type is the STD4N52K3 available in?

    The STD4N52K3 is available in a DPAK (TO-252) package.

  4. What are the key features of the SuperMESH3(TM) technology used in the STD4N52K3?

    The SuperMESH3(TM) technology includes 100% avalanche testing, high dv/dt capability, low intrinsic capacitance, and improved diode reverse recovery characteristics.

  5. What are some common applications for the STD4N52K3?

    Common applications include power supplies, DC-DC converters, motor control, industrial automation, aerospace, and automotive systems.

  6. What is the maximum junction temperature for the STD4N52K3?

    The maximum junction temperature (TJ) is 175°C.

  7. Is the STD4N52K3 suitable for high-frequency applications?
  8. What is the typical drain current of the STD4N52K3?

    The typical drain current (ID) is 2.5 A.

  9. Does the STD4N52K3 have any special testing or certifications?
  10. How does the SuperMESH3(TM) technology improve the performance of the STD4N52K3?

    The SuperMESH3(TM) technology enhances performance by reducing switching losses, improving diode reverse recovery characteristics, and providing high dv/dt capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):525 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:334 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD4N52K3 STD6N52K3 STD4N62K3 STD5N52K3 STD7N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 525 V 525 V 620 V 525 V 525 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 5A (Tc) 3.8A (Tc) 4.4A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.25A, 10V 1.2Ohm @ 2.5A, 10V 1.95Ohm @ 1.9A, 10V 1.5Ohm @ 2.2A, 10V 980mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 10 V - 14 nC @ 10 V 17 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 334 pF @ 100 V - 450 pF @ 50 V 545 pF @ 100 V 737 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 45W (Tc) 70W (Tc) 70W (Tc) 70W (Tc) 90W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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