STB33N60M2
  • Share:

STMicroelectronics STB33N60M2

Manufacturer No:
STB33N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 26A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB33N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its high voltage rating of 600 V, a typical on-resistance of 0.108 Ohms, and a maximum drain current of 26 A. The improved vertical structure and strip layout of the MDmesh M2 technology enhance the device's performance and efficiency.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Typical On-Resistance (Rds(on))0.108 Ohms
Maximum Drain Current (Id)26 A
Package TypeD2PAK
Junction Temperature Range-55°C to 150°C

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low typical on-resistance of 0.108 Ohms, which reduces power losses and improves efficiency.
  • Maximum drain current of 26 A, supporting high current requirements.
  • MDmesh M2 technology for enhanced performance and reduced thermal resistance.
  • Low Qg (gate charge) for better switching performance.

Applications

The STB33N60M2 is designed for use in various high-power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Motor Control and Drives
  • Power Factor Correction (PFC) circuits
  • High-frequency switching applications
  • Industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the voltage rating of the STB33N60M2?
    The voltage rating of the STB33N60M2 is 600 V.
  2. What is the typical on-resistance of the STB33N60M2?
    The typical on-resistance is 0.108 Ohms.
  3. What is the maximum drain current of the STB33N60M2?
    The maximum drain current is 26 A.
  4. What technology is used in the STB33N60M2?
    The STB33N60M2 uses MDmesh M2 technology.
  5. What is the package type of the STB33N60M2?
    The package type is D2PAK.
  6. What are the typical applications of the STB33N60M2?
    Typical applications include SMPS, motor control, PFC circuits, and high-frequency switching applications.
  7. What is the junction temperature range of the STB33N60M2?
    The junction temperature range is -55°C to 150°C.
  8. Why is the STB33N60M2 suitable for high-power applications?
    It is suitable due to its high voltage rating, low on-resistance, and high drain current capability.
  9. What are the benefits of the MDmesh M2 technology in the STB33N60M2?
    The benefits include improved performance, reduced thermal resistance, and better switching characteristics.
  10. Where can I find detailed specifications for the STB33N60M2?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$4.95
59

Please send RFQ , we will respond immediately.

Similar Products

Part Number STB33N60M2 STB33N65M2 STB33N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 24A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V 140mOhm @ 12A, 10V 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 41.5 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 100 V 1790 pF @ 100 V 1870 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN