STB33N60M2
  • Share:

STMicroelectronics STB33N60M2

Manufacturer No:
STB33N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 26A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB33N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its high voltage rating of 600 V, a typical on-resistance of 0.108 Ohms, and a maximum drain current of 26 A. The improved vertical structure and strip layout of the MDmesh M2 technology enhance the device's performance and efficiency.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Typical On-Resistance (Rds(on))0.108 Ohms
Maximum Drain Current (Id)26 A
Package TypeD2PAK
Junction Temperature Range-55°C to 150°C

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low typical on-resistance of 0.108 Ohms, which reduces power losses and improves efficiency.
  • Maximum drain current of 26 A, supporting high current requirements.
  • MDmesh M2 technology for enhanced performance and reduced thermal resistance.
  • Low Qg (gate charge) for better switching performance.

Applications

The STB33N60M2 is designed for use in various high-power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Motor Control and Drives
  • Power Factor Correction (PFC) circuits
  • High-frequency switching applications
  • Industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the voltage rating of the STB33N60M2?
    The voltage rating of the STB33N60M2 is 600 V.
  2. What is the typical on-resistance of the STB33N60M2?
    The typical on-resistance is 0.108 Ohms.
  3. What is the maximum drain current of the STB33N60M2?
    The maximum drain current is 26 A.
  4. What technology is used in the STB33N60M2?
    The STB33N60M2 uses MDmesh M2 technology.
  5. What is the package type of the STB33N60M2?
    The package type is D2PAK.
  6. What are the typical applications of the STB33N60M2?
    Typical applications include SMPS, motor control, PFC circuits, and high-frequency switching applications.
  7. What is the junction temperature range of the STB33N60M2?
    The junction temperature range is -55°C to 150°C.
  8. Why is the STB33N60M2 suitable for high-power applications?
    It is suitable due to its high voltage rating, low on-resistance, and high drain current capability.
  9. What are the benefits of the MDmesh M2 technology in the STB33N60M2?
    The benefits include improved performance, reduced thermal resistance, and better switching characteristics.
  10. Where can I find detailed specifications for the STB33N60M2?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$4.95
59

Please send RFQ , we will respond immediately.

Similar Products

Part Number STB33N60M2 STB33N65M2 STB33N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 24A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V 140mOhm @ 12A, 10V 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 41.5 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 100 V 1790 pF @ 100 V 1870 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
TS914ID
TS914ID
STMicroelectronics
IC CMOS 4 CIRCUIT 14SO
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT