STB33N60M2
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STMicroelectronics STB33N60M2

Manufacturer No:
STB33N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 26A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB33N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its high voltage rating of 600 V, a typical on-resistance of 0.108 Ohms, and a maximum drain current of 26 A. The improved vertical structure and strip layout of the MDmesh M2 technology enhance the device's performance and efficiency.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Typical On-Resistance (Rds(on))0.108 Ohms
Maximum Drain Current (Id)26 A
Package TypeD2PAK
Junction Temperature Range-55°C to 150°C

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low typical on-resistance of 0.108 Ohms, which reduces power losses and improves efficiency.
  • Maximum drain current of 26 A, supporting high current requirements.
  • MDmesh M2 technology for enhanced performance and reduced thermal resistance.
  • Low Qg (gate charge) for better switching performance.

Applications

The STB33N60M2 is designed for use in various high-power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Motor Control and Drives
  • Power Factor Correction (PFC) circuits
  • High-frequency switching applications
  • Industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the voltage rating of the STB33N60M2?
    The voltage rating of the STB33N60M2 is 600 V.
  2. What is the typical on-resistance of the STB33N60M2?
    The typical on-resistance is 0.108 Ohms.
  3. What is the maximum drain current of the STB33N60M2?
    The maximum drain current is 26 A.
  4. What technology is used in the STB33N60M2?
    The STB33N60M2 uses MDmesh M2 technology.
  5. What is the package type of the STB33N60M2?
    The package type is D2PAK.
  6. What are the typical applications of the STB33N60M2?
    Typical applications include SMPS, motor control, PFC circuits, and high-frequency switching applications.
  7. What is the junction temperature range of the STB33N60M2?
    The junction temperature range is -55°C to 150°C.
  8. Why is the STB33N60M2 suitable for high-power applications?
    It is suitable due to its high voltage rating, low on-resistance, and high drain current capability.
  9. What are the benefits of the MDmesh M2 technology in the STB33N60M2?
    The benefits include improved performance, reduced thermal resistance, and better switching characteristics.
  10. Where can I find detailed specifications for the STB33N60M2?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB33N60M2 STB33N65M2 STB33N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 24A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V 140mOhm @ 12A, 10V 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 41.5 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 100 V 1790 pF @ 100 V 1870 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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