CSD17318Q2
  • Share:

Texas Instruments CSD17318Q2

Manufacturer No:
CSD17318Q2
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 25A 6WSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17318Q2, manufactured by Texas Instruments, is a high-performance N-channel NexFET™ power MOSFET. Designed for efficiency and compactness, this component is housed in a 2mm x 2mm SON package, making it ideal for space-constrained applications. With a low on-resistance of 16.9mΩ and a voltage rating of 30V, the CSD17318Q2 is particularly suited for power management tasks in various electronic devices. Its market positioning targets engineers and designers in the consumer electronics, automotive, and industrial sectors who require reliable and efficient power switching solutions.

Key Specifications

ParameterValueUnitNotes
Package2mm x 2mm SON-Compact form factor
TypeN-channel-Power MOSFET
On-Resistance (RDS(on))16.9Low resistance for efficient power management
Voltage Rating (VDS)30VSuitable for low to medium voltage applications
TechnologyNexFET™-Advanced MOSFET technology

Key Features

  • Low on-resistance (16.9mΩ) for reduced power loss and improved efficiency.
  • Compact 2mm x 2mm SON package, ideal for space-constrained designs.
  • 30V voltage rating, suitable for a wide range of applications.
  • NexFET™ technology ensures high performance and reliability.
  • ESD protection enhances durability in demanding environments.

Applications

The CSD17318Q2 is widely used in various fields, including:

  • Consumer Electronics: Power management in smartphones, tablets, and portable devices.
  • Automotive: Efficient power switching in automotive electronics, such as infotainment systems and lighting controls.
  • Industrial: Motor control and power supply units in industrial automation systems.
  • Telecommunications: Power management in networking equipment and communication devices.

Q & A

1. What is the on-resistance of the CSD17318Q2?

The on-resistance (RDS(on)) is 16.9mΩ.

2. What is the voltage rating of this MOSFET?

The voltage rating (VDS) is 30V.

3. What package does the CSD17318Q2 use?

It uses a 2mm x 2mm SON package.

4. What is NexFET™ technology?

NexFET™ is an advanced MOSFET technology developed by Texas Instruments, offering high efficiency and performance.

5. Is the CSD17318Q2 suitable for automotive applications?

Yes, it is suitable for automotive electronics due to its reliability and efficiency.

6. Does this MOSFET have ESD protection?

Yes, it includes ESD protection for enhanced durability.

7. What are the typical applications of the CSD17318Q2?

Typical applications include consumer electronics, automotive systems, industrial automation, and telecommunications.

8. What is the advantage of the compact SON package?

The compact 2mm x 2mm SON package is ideal for space-constrained designs.

9. Can this MOSFET handle high currents?

While it is designed for efficient power management, specific current handling capabilities depend on the application and thermal management.

10. Where can I purchase the CSD17318Q2?

It is available through authorized distributors such as Digi-Key, Mouser, and Texas Instruments' official channels.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:15.1mOhm @ 8A, 8V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:879 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):16W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WSON (2x2)
Package / Case:6-WDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.55
1,028

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CSD17318Q2 CSD17318Q2T CSD17313Q2
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 25A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 2.5V, 8V 3V, 8V
Rds On (Max) @ Id, Vgs 15.1mOhm @ 8A, 8V 15.1mOhm @ 8A, 8V 30mOhm @ 4A, 8V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 6 nC @ 4.5 V 2.7 nC @ 4.5 V
Vgs (Max) ±10V ±10V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 879 pF @ 15 V 879 pF @ 15 V 340 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 16W (Tc) 16W (Tc) 2.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-WSON (2x2) 6-WSON (2x2) 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad 6-WDFN Exposed Pad

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

TPD1E1B04DPYT
TPD1E1B04DPYT
Texas Instruments
TVS DIODE 3.6VWM 8.5VC 2X1SON
CDCM61004RHBR
CDCM61004RHBR
Texas Instruments
IC CLK GEN 1:4 LOW JITTER 32QFN
TLC272ACP
TLC272ACP
Texas Instruments
IC CMOS 2 CIRCUIT 8DIP
LMC6482AIMX/NOPB
LMC6482AIMX/NOPB
Texas Instruments
IC CMOS 2 CIRCUIT 8SOIC
LT1013DID
LT1013DID
Texas Instruments
IC OPAMP GP 2 CIRCUIT 8SOIC
INA253A1IPWR
INA253A1IPWR
Texas Instruments
IC CURR SENSE 1 CIRCUIT 20TSSOP
CD74HC14M96
CD74HC14M96
Texas Instruments
IC INV SCHMITT 6CH 1-IN 14SOIC
BQ20Z655DBTR
BQ20Z655DBTR
Texas Instruments
BQ20Z655 - SBS 1.1 COMPLIANT GAS
LM5109ASD/NOPB
LM5109ASD/NOPB
Texas Instruments
IC GATE DRVR HALF-BRIDGE 8WSON
TL431IDR
TL431IDR
Texas Instruments
IC VREF SHUNT ADJ 2.2% 8SOIC
LM3674MFX-ADJ/NOPB
LM3674MFX-ADJ/NOPB
Texas Instruments
IC REG BUCK ADJ 600MA SOT23-5
TPS54550PWPG4
TPS54550PWPG4
Texas Instruments
IC REG BUCK ADJ 6A 16HTSSOP