CSD17318Q2
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Texas Instruments CSD17318Q2

Manufacturer No:
CSD17318Q2
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 25A 6WSON
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The CSD17318Q2, manufactured by Texas Instruments, is a high-performance N-channel NexFET™ power MOSFET. Designed for efficiency and compactness, this component is housed in a 2mm x 2mm SON package, making it ideal for space-constrained applications. With a low on-resistance of 16.9mΩ and a voltage rating of 30V, the CSD17318Q2 is particularly suited for power management tasks in various electronic devices. Its market positioning targets engineers and designers in the consumer electronics, automotive, and industrial sectors who require reliable and efficient power switching solutions.

Key Specifications

ParameterValueUnitNotes
Package2mm x 2mm SON-Compact form factor
TypeN-channel-Power MOSFET
On-Resistance (RDS(on))16.9Low resistance for efficient power management
Voltage Rating (VDS)30VSuitable for low to medium voltage applications
TechnologyNexFET™-Advanced MOSFET technology

Key Features

  • Low on-resistance (16.9mΩ) for reduced power loss and improved efficiency.
  • Compact 2mm x 2mm SON package, ideal for space-constrained designs.
  • 30V voltage rating, suitable for a wide range of applications.
  • NexFET™ technology ensures high performance and reliability.
  • ESD protection enhances durability in demanding environments.

Applications

The CSD17318Q2 is widely used in various fields, including:

  • Consumer Electronics: Power management in smartphones, tablets, and portable devices.
  • Automotive: Efficient power switching in automotive electronics, such as infotainment systems and lighting controls.
  • Industrial: Motor control and power supply units in industrial automation systems.
  • Telecommunications: Power management in networking equipment and communication devices.

Q & A

1. What is the on-resistance of the CSD17318Q2?

The on-resistance (RDS(on)) is 16.9mΩ.

2. What is the voltage rating of this MOSFET?

The voltage rating (VDS) is 30V.

3. What package does the CSD17318Q2 use?

It uses a 2mm x 2mm SON package.

4. What is NexFET™ technology?

NexFET™ is an advanced MOSFET technology developed by Texas Instruments, offering high efficiency and performance.

5. Is the CSD17318Q2 suitable for automotive applications?

Yes, it is suitable for automotive electronics due to its reliability and efficiency.

6. Does this MOSFET have ESD protection?

Yes, it includes ESD protection for enhanced durability.

7. What are the typical applications of the CSD17318Q2?

Typical applications include consumer electronics, automotive systems, industrial automation, and telecommunications.

8. What is the advantage of the compact SON package?

The compact 2mm x 2mm SON package is ideal for space-constrained designs.

9. Can this MOSFET handle high currents?

While it is designed for efficient power management, specific current handling capabilities depend on the application and thermal management.

10. Where can I purchase the CSD17318Q2?

It is available through authorized distributors such as Digi-Key, Mouser, and Texas Instruments' official channels.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:15.1mOhm @ 8A, 8V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:879 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):16W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WSON (2x2)
Package / Case:6-WDFN Exposed Pad
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Similar Products

Part Number CSD17318Q2 CSD17318Q2T CSD17313Q2
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 25A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 2.5V, 8V 3V, 8V
Rds On (Max) @ Id, Vgs 15.1mOhm @ 8A, 8V 15.1mOhm @ 8A, 8V 30mOhm @ 4A, 8V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 6 nC @ 4.5 V 2.7 nC @ 4.5 V
Vgs (Max) ±10V ±10V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 879 pF @ 15 V 879 pF @ 15 V 340 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 16W (Tc) 16W (Tc) 2.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-WSON (2x2) 6-WSON (2x2) 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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