Overview
The STD80N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the 7th generation of ST's proprietary STripFET™ technology. This device is designed to offer superior electrical characteristics, making it suitable for a wide range of power management applications. The STD80N10F7 features a new gate structure that enhances its overall performance and efficiency.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 100 V |
| RDS(on) (On-Resistance) | 0.0085 Ω (typ.) |
| ID (Drain Current) | 70 A |
| Ptot (Total Power Dissipation) | Dependent on package and thermal conditions |
| TJ (Junction Temperature) | -55°C to 150°C |
| Package | DPAK |
Key Features
- High efficiency due to low on-resistance (RDS(on)) of 0.0085 Ω (typ.)
- High current capability of up to 70 A
- 100 V drain-source voltage rating, making it suitable for high-voltage applications
- Utilizes ST's 7th generation STripFET™ technology with a new gate structure for enhanced performance
- Avaliable in DPAK package, offering a compact and thermally efficient design
Applications
- Power supplies and DC-DC converters
- Motor control and drives
- Automotive systems (e.g., battery management, power steering)
- Industrial control and automation
- Renewable energy systems (e.g., solar, wind power)
Q & A
- What is the maximum drain-source voltage of the STD80N10F7?
The maximum drain-source voltage (VDS) is 100 V. - What is the typical on-resistance of the STD80N10F7?
The typical on-resistance (RDS(on)) is 0.0085 Ω. - What is the maximum drain current of the STD80N10F7?
The maximum drain current (ID) is 70 A. - In what package is the STD80N10F7 available?
The STD80N10F7 is available in a DPAK package. - What is the junction temperature range of the STD80N10F7?
The junction temperature range is -55°C to 150°C. - What technology does the STD80N10F7 use?
The STD80N10F7 uses ST's 7th generation STripFET™ technology. - What are some common applications for the STD80N10F7?
Common applications include power supplies, motor control, automotive systems, industrial control, and renewable energy systems. - How does the new gate structure in the STD80N10F7 enhance its performance?
The new gate structure enhances the device's electrical characteristics, leading to improved efficiency and performance. - Is the STD80N10F7 suitable for high-power applications?
Yes, the STD80N10F7 is suitable for high-power applications due to its high current and voltage ratings. - Where can I find detailed specifications for the STD80N10F7?
Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through authorized distributors like Digi-Key, Mouser, etc.
