Transistors - FETs, MOSFETs - Single

Category Introduction

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Product List

39097 Items

Mfr Part #	Quantity Available	UnitPrice	Series	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
EPC2040 GANFET NCH 15V 3.4A DIE EPC	615	$1.13	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	15 V	3.4A (Ta)	5V	30mOhm @ 1.5A, 5V	2.5V @ 1mA	0.93 nC @ 5 V	-	105 pF @ 6 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2038 GANFET N-CH 100V 500MA DIE EPC	493	$1.33	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	500mA (Ta)	5V	3.3Ohm @ 50mA, 5V	2.5V @ 20µA	0.044 nC @ 5 V	+6V, -4V	8.4 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2037 GANFET N-CH 100V 1.7A DIE EPC	78	$1.33	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	1.7A (Ta)	5V	550mOhm @ 100mA, 5V	2.5V @ 80µA	0.12 nC @ 5 V	+6V, -4V	14 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2036 GANFET N-CH 100V 1.7A DIE EPC	16	$1.31	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	1.7A (Ta)	5V	65mOhm @ 1A, 5V	2.5V @ 600µA	0.91 nC @ 5 V	+6V, -4V	90 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2052 GANFET N-CH 100V 8.2A DIE EPC	274	$1.63		Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	8.2A (Ta)	5V	13.5mOhm @ 11A, 5V	2.5V @ 3mA	4.5 nC @ 5 V	+6V, -4V	575 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2007C GANFET N-CH 100V 6A DIE OUTLINE EPC	169	$2.19	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	6A (Ta)	5V	30mOhm @ 6A, 5V	2.5V @ 1.2mA	2.2 nC @ 5 V	+6V, -4V	220 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die Outline (5-Solder Bar)	Die
EPC8010 GANFET N-CH 100V 4A DIE EPC	35	$2.20	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	4A (Ta)	5V	160mOhm @ 500mA, 5V	2.5V @ 250µA	0.48 nC @ 5 V	+6V, -4V	55 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2054 TRANS GAN 200V DIE 60MOHM EPC	20	$1.82	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	3A (Ta)	5V	43mOhm @ 1A, 5V	2.5V @ 1mA	4.3 nC @ 5 V	+6V, -4V	573 pF @ 100 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2045 GANFET N-CH 100V 16A DIE EPC	379	$2.57	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	16A (Ta)	5V	7mOhm @ 16A, 5V	2.5V @ 5mA	6.5 nC @ 5 V	+6V, -4V	685 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2204 TRANS GAN 100V DIE 5.6MOHM EPC	213	$2.59	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	29A (Ta)	5V	6mOhm @ 16A, 5V	2.5V @ 4mA	7.4 nC @ 5 V	+6V, -4V	851 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2055 GANFET N-CH 40V 29A DIE EPC	238	$2.64	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	29A (Ta)	5V	3.6mOhm @ 15A, 5V	2.5V @ 7mA	8.5 nC @ 5 V	+6V, -4V	1111 pF @ 20 V	Standard	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2012C GANFET N-CH 200V 5A DIE OUTLINE EPC	333	$2.86	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	5A (Ta)	5V	100mOhm @ 3A, 5V	2.5V @ 1mA	1.3 nC @ 5 V	+6V, -4V	140 pF @ 100 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die Outline (4-Solder Bar)	Die
EPC2202 GANFET N-CH 80V 18A DIE EPC	169	$2.99	Automotive, AEC-Q101, eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	80 V	18A (Ta)	5V	17mOhm @ 11A, 5V	2.5V @ 3mA	4 nC @ 5 V	+5.75V, -4V	415 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die Outline (6-Solder Bar)	Die
EPC2212 GANFET N-CH 100V 18A DIE EPC	27	$3.07	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	18A (Ta)	5V	13.5mOhm @ 11A, 5V	2.5V @ 3mA	4 nC @ 5 V	+6V, -4V	407 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2207 TRANS GAN 200V DIE .022OHM EPC	281	$3.30		Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	14A (Ta)	5V	22mOhm @ 14A, 5V	2.5V @ 2mA	5.9 nC @ 5 V	+6V, -4V	600 pF @ 100 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC8009 GANFET N-CH 65V 4A DIE EPC	69	$3.45	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	65 V	4A (Ta)	5V	130mOhm @ 500mA, 5V	2.5V @ 250µA	0.45 nC @ 5 V	+6V, -4V	52 pF @ 32.5 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2019 GANFET N-CH 200V 8.5A DIE EPC	248	$3.79	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	8.5A (Ta)	5V	42mOhm @ 7A, 5V	2.5V @ 1.5mA	2.9 nC @ 5 V	+6V, -4V	288 pF @ 100 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2053 GANFET N-CH 100V 48A DIE EPC	198	$4.73	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	48A (Ta)	5V	3.8mOhm @ 25A, 5V	2.5V @ 9mA	14.8 nC @ 5 V	+6V, -4V	1895 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2015C GANFET N-CH 40V 53A DIE EPC	38	$4.81	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	53A (Ta)	5V	4mOhm @ 33A, 5V	2.5V @ 9mA	8.7 nC @ 5 V	+6V, -4V	1180 pF @ 20 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2218 GANFET N-CH 100V DIE EPC	211	$4.71		Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	60A (Ta)	5V	3.2mOhm @ 25A, 5V	2.5V @ 7mA	16.3 nC @ 5 V	+6V, -4V	2703 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die

About Single FETs & Single MOSFETs

What are Single FETs & Single MOSFETs?

Single FETs

Single Field Effect Transistors (FETs) are a type of transistor used to control the flow of electrical current in a circuit. They operate by using an electric field to control the conductivity of a channel in a semiconductor material. The basic operating principle involves three terminals: the source, the drain, and the gate. When a voltage is applied to the gate terminal, it creates an electric field that modulates the conductivity of the channel between the source and the drain, allowing or preventing current flow. This makes FETs essential components in amplifying or switching electronic signals.

Single MOSFETs

Single MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are a type of transistor used to amplify or switch electronic signals. They are a fundamental component in modern electronics, known for their efficiency and versatility. A MOSFET operates by varying the voltage applied to its gate terminal, which in turn controls the flow of current between the source and drain terminals. This voltage-controlled operation allows MOSFETs to act as efficient switches or amplifiers, making them indispensable in various electronic circuits.

Types of Single FETs

MOSFETs (Metal-Oxide-Semiconductor FETs)

MOSFETs are the most common type of FETs, known for their high efficiency and fast switching capabilities. They are used in both analog and digital circuits and are characterized by their insulated gate, which provides high input impedance. MOSFETs are ideal for applications requiring low power consumption and high-speed operation, such as in microprocessors and power management circuits.

JFETs (Junction FETs)

JFETs are known for their simplicity and reliability. They have a high input impedance and are often used in low-noise applications. Unlike MOSFETs, JFETs have a junction gate, which makes them less susceptible to damage from static electricity. They are typically used in audio amplifiers and other analog signal processing applications.

MESFETs (Metal-Semiconductor FETs)

MESFETs are primarily used in high-frequency applications. They are similar to JFETs but use a Schottky barrier instead of a p-n junction. This allows them to operate at higher frequencies, making them suitable for microwave and RF applications. MESFETs are commonly found in satellite communication systems and radar equipment.

Types of Single MOSFETs

Enhancement Mode MOSFETs

Enhancement mode MOSFETs are the most common type, requiring a positive gate-source voltage to conduct. They are typically used in applications where the MOSFET needs to be off at zero gate voltage, providing a normally-off switch. This characteristic makes them ideal for digital circuits and power management applications.

Depletion Mode MOSFETs

Depletion mode MOSFETs are less common and conduct at zero gate-source voltage. They require a negative gate-source voltage to turn off. These MOSFETs are used in applications where a normally-on switch is needed, such as in certain analog circuits and specific power applications.

N-Channel MOSFETs

N-Channel MOSFETs are favored for their higher electron mobility, which allows for faster switching speeds and higher current capacity. They are widely used in power applications, including motor drivers and power converters.

P-Channel MOSFETs

P-Channel MOSFETs, while slower than their N-Channel counterparts, are used in applications where a positive voltage is not available for the gate. They are often found in high-side switching applications.

How to choose Single FETs?

When selecting a Single FET, several key parameters should be considered:

Threshold Voltage (V_th): The minimum gate-to-source voltage required to create a conducting path between the source and drain.
Drain Current (I_D): The maximum current that can flow through the device.
On-Resistance (R_DS(on)): The resistance between the drain and source when the FET is on, affecting power loss and efficiency.
Gate Charge (Q_g): The total charge required to turn the FET on and off, impacting switching speed.
Breakdown Voltage (V_BR): The maximum voltage the FET can withstand before breaking down.

Evaluating product quality and reliability involves checking the manufacturer's reputation, product datasheets, and customer reviews. Environmental factors such as temperature range and humidity should also be considered, along with installation requirements like heat dissipation and packaging type.

How to choose Single MOSFETs?

When selecting a Single MOSFET, several key parameters must be considered:

Voltage Rating: Ensure the MOSFET can handle the maximum voltage in your application.
Current Rating: Choose a MOSFET that can conduct the required current without overheating.
On-Resistance (R_DS(on)): Lower on-resistance means less power loss and higher efficiency.
Gate Charge: A lower gate charge allows for faster switching speeds.
Thermal Resistance: Evaluate the MOSFET's ability to dissipate heat effectively.

To evaluate product quality and reliability, consider suppliers with a strong reputation, comprehensive datasheets, and robust testing protocols. Environmental factors such as temperature ranges and humidity should also be considered, alongside installation requirements like PCB layout and heat sinking.

Applications of Single FETs & Single MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are pivotal components in the realm of discrete semiconductor products. These devices are integral to a myriad of applications across various industries, offering efficient control of electrical signals and power. Below, we explore the diverse applications of Single FETs and Single MOSFETs across different sectors.

1. Consumer Electronics

In the consumer electronics industry, Single FETs and MOSFETs are crucial for power management and signal amplification. They are commonly used in devices such as smartphones, laptops, and televisions to regulate voltage and current, ensuring efficient power usage and prolonging battery life. Their ability to switch rapidly makes them ideal for high-speed data processing applications.

2. Automotive Industry

The automotive sector leverages Single FETs and MOSFETs for various applications, including electric vehicle powertrains, lighting systems, and infotainment systems. These components are essential for controlling electric motors, managing battery systems, and ensuring efficient energy conversion, contributing to the overall performance and reliability of modern vehicles.

3. Industrial Automation

In industrial automation, Single FETs and MOSFETs are employed in motor drives, robotics, and control systems. They facilitate precise control of machinery by modulating power supply and signal processing, enhancing the efficiency and accuracy of automated processes. Their robustness and reliability make them suitable for harsh industrial environments.

4. Telecommunications

The telecommunications industry relies on Single FETs and MOSFETs for signal amplification and switching in network infrastructure. These components are used in base stations, routers, and other communication devices to ensure clear signal transmission and reception, supporting the seamless operation of global communication networks.

5. Renewable Energy Systems

In renewable energy systems, Single FETs and MOSFETs play a vital role in power conversion and management. They are used in solar inverters, wind turbine controllers, and energy storage systems to optimize energy conversion efficiency and manage power flow, contributing to the sustainability and reliability of renewable energy solutions.

In conclusion, Single FETs and Single MOSFETs are indispensable components across various industries, offering versatile solutions for power management and signal processing. Their applications continue to expand as technology advances, underscoring their significance in modern electronic systems.