Transistors - FETs, MOSFETs - Single

Category Introduction

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Product List

39097 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / Case
NX7002AK,215
NX7002AK,215
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
2,067 $0.22
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V190mA (Ta)5V, 10V4.5Ohm @ 100mA, 10V2.1V @ 250µA0.43 nC @ 4.5 V±20V17 pF @ 10 V-265mW (Ta), 1.33W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
BSS84AK,215
BSS84AK,215
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
3,061 $0.25
Automotive, AEC-Q101, TrenchMOS™ Tape & Reel (TR) ActiveP-ChannelMOSFET (Metal Oxide)50 V180mA (Ta)10V7.5Ohm @ 100mA, 10V2.1V @ 250µA0.35 nC @ 5 V±20V36 pF @ 25 V-350mW (Ta), 1.14W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
2N7002,215
2N7002,215
MOSFET N-CH 60V 300MA TO236AB
Nexperia USA Inc.
2,650 $0.31
TrenchMOS™ Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V300mA (Ta)10V5Ohm @ 500mA, 10V2.5V @ 250µA-±30V50 pF @ 10 V-830mW (Ta)-65°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
NX3008NBK,215
NX3008NBK,215
MOSFET N-CH 30V 400MA TO236AB
Nexperia USA Inc.
1,032 $0.31
Automotive, AEC-Q101, TrenchMOS™ Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)30 V400mA (Tc)1.8V, 4.5V1.4Ohm @ 350mA, 4.5V1.1V @ 250µA0.68 nC @ 4.5 V±8V50 pF @ 15 V-350mW (Ta), 1.14W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
BSS138W-7-F
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
2,857 $0.32
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)50 V200mA (Ta)10V3.5Ohm @ 220mA, 10V1.5V @ 250µA-±20V50 pF @ 10 V-200mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-323SC-70, SOT-323
2N7002H6327XTSA2
2N7002H6327XTSA2
MOSFET N-CH 60V 300MA SOT23-3
Infineon Technologies
1,249 $0.38
OptiMOS™ Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V300mA (Ta)4.5V, 10V3Ohm @ 500mA, 10V2.5V @ 250µA0.6 nC @ 10 V±20V20 pF @ 25 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT23TO-236-3, SC-59, SOT-23-3
BSS123WQ-7-F
BSS123WQ-7-F
MOSFET N-CH 100V 170MA SOT323
Diodes Incorporated
2,511 $0.38
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)100 V170mA (Ta)4.5V, 10V6Ohm @ 170mA, 10V2V @ 1mA-±20V60 pF @ 25 V-200mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-323SC-70, SOT-323
BSS84PH6433XTMA1
BSS84PH6433XTMA1
MOSFET P-CH 60V 170MA SOT23-3
Infineon Technologies
433 $0.45
SIPMOS® Tape & Reel (TR) Not For New DesignsP-ChannelMOSFET (Metal Oxide)60 V170mA (Ta)4.5V, 10V8Ohm @ 170mA, 10V2V @ 20µA1.5 nC @ 10 V±20V19 pF @ 25 V-360mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT23TO-236-3, SC-59, SOT-23-3
BSN20BKR
BSN20BKR
MOSFET N-CH 60V 265MA TO236AB
Nexperia USA Inc.
1,154 $0.41
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V265mA (Ta)10V2.8Ohm @ 200mA, 10V1.4V @ 250µA0.49 nC @ 4.5 V±20V20.2 pF @ 30 V-310mW (Ta)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
2N7002W-7-F
2N7002W-7-F
MOSFET N-CH 60V 115MA SOT323
Diodes Incorporated
1,366 $0.41
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V115mA (Ta)5V, 10V7.5Ohm @ 50mA, 5V2V @ 250µA-±20V50 pF @ 25 V-200mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-323SC-70, SOT-323
BSS123W-7-F
BSS123W-7-F
MOSFET N-CH 100V 170MA SOT323
Diodes Incorporated
783 $0.41
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)100 V170mA (Ta)4.5V, 10V6Ohm @ 170mA, 10V2V @ 1mA-±20V60 pF @ 25 V-200mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-323SC-70, SOT-323
NTA4151PT1G
NTA4151PT1G
MOSFET P-CH 20V 760MA SC75
onsemi
2,174 $0.43
Tape & Reel (TR) ActiveP-ChannelMOSFET (Metal Oxide)20 V760mA (Tj)1.8V, 4.5V360mOhm @ 350mA, 4.5V1.2V @ 250µA2.1 nC @ 4.5 V±6V156 pF @ 5 V-301mW (Tj)-55°C ~ 150°C (TJ)Surface MountSC-75, SOT-416SC-75, SOT-416
BSS84W-7-F
BSS84W-7-F
MOSFET P-CH 50V 130MA SOT323
Diodes Incorporated
742 $0.43
Tape & Reel (TR) ActiveP-ChannelMOSFET (Metal Oxide)50 V130mA (Ta)5V10Ohm @ 100mA, 5V2V @ 1mA-±20V45 pF @ 25 V-200mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-323SC-70, SOT-323
BSS123NH6327XTSA1
BSS123NH6327XTSA1
MOSFET N-CH 100V 190MA SOT23-3
Infineon Technologies
2,014 $0.48
OptiMOS™ Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)100 V190mA (Ta)4.5V, 10V6Ohm @ 190mA, 10V1.8V @ 13µA0.9 nC @ 10 V±20V20.9 pF @ 25 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT23TO-236-3, SC-59, SOT-23-3
AO3407A
AO3407A
MOSFET P-CH 30V 4.3A SOT23-3L
Alpha & Omega Semiconductor Inc.
554 $0.47
Tape & Reel (TR) Not For New DesignsP-ChannelMOSFET (Metal Oxide)30 V4.3A (Ta)4.5V, 10V48mOhm @ 4.3A, 10V3V @ 250µA16 nC @ 10 V±20V830 pF @ 15 V-1.4W (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-33-SMD, SOT-23-3 Variant
BSH105,215
BSH105,215
MOSFET N-CH 20V 1.05A TO236AB
Nexperia USA Inc.
1,772 $0.38
Tape & Reel (TR) Not For New DesignsN-ChannelMOSFET (Metal Oxide)20 V1.05A (Ta)1.8V, 4.5V200mOhm @ 600mA, 4.5V570mV @ 1mA (Typ)3.9 nC @ 4.5 V±8V152 pF @ 16 V-417mW (Ta)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
PMV20ENR
PMV20ENR
MOSFET N-CH 30V 6A TO236AB
Nexperia USA Inc.
1,069 $0.39
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)30 V6A (Ta)4.5V, 10V21mOhm @ 6A, 10V2V @ 250µA10.8 nC @ 10 V±20V435 pF @ 15 V-510mW (Ta), 6.94W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
IRLML6346TRPBF
IRLML6346TRPBF
MOSFET N-CH 30V 3.4A SOT23
Infineon Technologies
298 $0.44
HEXFET® Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)30 V3.4A (Ta)2.5V, 4.5V63mOhm @ 3.4A, 4.5V1.1V @ 10µA2.9 nC @ 4.5 V±12V270 pF @ 24 V-1.3W (Ta)-55°C ~ 150°C (TJ)Surface MountMicro3™/SOT-23TO-236-3, SC-59, SOT-23-3
BSH103,215
BSH103,215
MOSFET N-CH 30V 850MA TO236AB
Nexperia USA Inc.
849 $0.48
Tape & Reel (TR) Not For New DesignsN-ChannelMOSFET (Metal Oxide)30 V850mA (Ta)2.5V400mOhm @ 500mA, 4.5V400mV @ 1mA (Min)2.1 nC @ 4.5 V±8V83 pF @ 24 V-540mW (Ta)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
BSH103,235
BSH103,235
MOSFET N-CH 30V 850MA TO236AB
Nexperia USA Inc.
125 $0.12
Tape & Reel (TR) Not For New DesignsN-ChannelMOSFET (Metal Oxide)30 V850mA (Ta)2.5V400mOhm @ 500mA, 4.5V400mV @ 1mA (Min)2.1 nC @ 4.5 V±8V83 pF @ 24 V-540mW (Ta)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3

About Single FETs & Single MOSFETs

What are Single FETs & Single MOSFETs?

Single FETs

Single Field Effect Transistors (FETs) are a type of transistor used to control the flow of electrical current in a circuit. They operate by using an electric field to control the conductivity of a channel in a semiconductor material. The basic operating principle involves three terminals: the source, the drain, and the gate. When a voltage is applied to the gate terminal, it creates an electric field that modulates the conductivity of the channel between the source and the drain, allowing or preventing current flow. This makes FETs essential components in amplifying or switching electronic signals.

Single MOSFETs

Single MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are a type of transistor used to amplify or switch electronic signals. They are a fundamental component in modern electronics, known for their efficiency and versatility. A MOSFET operates by varying the voltage applied to its gate terminal, which in turn controls the flow of current between the source and drain terminals. This voltage-controlled operation allows MOSFETs to act as efficient switches or amplifiers, making them indispensable in various electronic circuits.

Types of Single FETs

MOSFETs (Metal-Oxide-Semiconductor FETs)

MOSFETs are the most common type of FETs, known for their high efficiency and fast switching capabilities. They are used in both analog and digital circuits and are characterized by their insulated gate, which provides high input impedance. MOSFETs are ideal for applications requiring low power consumption and high-speed operation, such as in microprocessors and power management circuits.

JFETs (Junction FETs)

JFETs are known for their simplicity and reliability. They have a high input impedance and are often used in low-noise applications. Unlike MOSFETs, JFETs have a junction gate, which makes them less susceptible to damage from static electricity. They are typically used in audio amplifiers and other analog signal processing applications.

MESFETs (Metal-Semiconductor FETs)

MESFETs are primarily used in high-frequency applications. They are similar to JFETs but use a Schottky barrier instead of a p-n junction. This allows them to operate at higher frequencies, making them suitable for microwave and RF applications. MESFETs are commonly found in satellite communication systems and radar equipment.

Types of Single MOSFETs

Enhancement Mode MOSFETs

Enhancement mode MOSFETs are the most common type, requiring a positive gate-source voltage to conduct. They are typically used in applications where the MOSFET needs to be off at zero gate voltage, providing a normally-off switch. This characteristic makes them ideal for digital circuits and power management applications.

Depletion Mode MOSFETs

Depletion mode MOSFETs are less common and conduct at zero gate-source voltage. They require a negative gate-source voltage to turn off. These MOSFETs are used in applications where a normally-on switch is needed, such as in certain analog circuits and specific power applications.

N-Channel MOSFETs

N-Channel MOSFETs are favored for their higher electron mobility, which allows for faster switching speeds and higher current capacity. They are widely used in power applications, including motor drivers and power converters.

P-Channel MOSFETs

P-Channel MOSFETs, while slower than their N-Channel counterparts, are used in applications where a positive voltage is not available for the gate. They are often found in high-side switching applications.

How to choose Single FETs?

When selecting a Single FET, several key parameters should be considered:

  • Threshold Voltage (Vth): The minimum gate-to-source voltage required to create a conducting path between the source and drain.
  • Drain Current (ID): The maximum current that can flow through the device.
  • On-Resistance (RDS(on)): The resistance between the drain and source when the FET is on, affecting power loss and efficiency.
  • Gate Charge (Qg): The total charge required to turn the FET on and off, impacting switching speed.
  • Breakdown Voltage (VBR): The maximum voltage the FET can withstand before breaking down.

Evaluating product quality and reliability involves checking the manufacturer's reputation, product datasheets, and customer reviews. Environmental factors such as temperature range and humidity should also be considered, along with installation requirements like heat dissipation and packaging type.

How to choose Single MOSFETs?

When selecting a Single MOSFET, several key parameters must be considered:

  • Voltage Rating: Ensure the MOSFET can handle the maximum voltage in your application.
  • Current Rating: Choose a MOSFET that can conduct the required current without overheating.
  • On-Resistance (RDS(on)): Lower on-resistance means less power loss and higher efficiency.
  • Gate Charge: A lower gate charge allows for faster switching speeds.
  • Thermal Resistance: Evaluate the MOSFET's ability to dissipate heat effectively.

To evaluate product quality and reliability, consider suppliers with a strong reputation, comprehensive datasheets, and robust testing protocols. Environmental factors such as temperature ranges and humidity should also be considered, alongside installation requirements like PCB layout and heat sinking.

Applications of Single FETs & Single MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are pivotal components in the realm of discrete semiconductor products. These devices are integral to a myriad of applications across various industries, offering efficient control of electrical signals and power. Below, we explore the diverse applications of Single FETs and Single MOSFETs across different sectors.

1. Consumer Electronics

In the consumer electronics industry, Single FETs and MOSFETs are crucial for power management and signal amplification. They are commonly used in devices such as smartphones, laptops, and televisions to regulate voltage and current, ensuring efficient power usage and prolonging battery life. Their ability to switch rapidly makes them ideal for high-speed data processing applications.

2. Automotive Industry

The automotive sector leverages Single FETs and MOSFETs for various applications, including electric vehicle powertrains, lighting systems, and infotainment systems. These components are essential for controlling electric motors, managing battery systems, and ensuring efficient energy conversion, contributing to the overall performance and reliability of modern vehicles.

3. Industrial Automation

In industrial automation, Single FETs and MOSFETs are employed in motor drives, robotics, and control systems. They facilitate precise control of machinery by modulating power supply and signal processing, enhancing the efficiency and accuracy of automated processes. Their robustness and reliability make them suitable for harsh industrial environments.

4. Telecommunications

The telecommunications industry relies on Single FETs and MOSFETs for signal amplification and switching in network infrastructure. These components are used in base stations, routers, and other communication devices to ensure clear signal transmission and reception, supporting the seamless operation of global communication networks.

5. Renewable Energy Systems

In renewable energy systems, Single FETs and MOSFETs play a vital role in power conversion and management. They are used in solar inverters, wind turbine controllers, and energy storage systems to optimize energy conversion efficiency and manage power flow, contributing to the sustainability and reliability of renewable energy solutions.

In conclusion, Single FETs and Single MOSFETs are indispensable components across various industries, offering versatile solutions for power management and signal processing. Their applications continue to expand as technology advances, underscoring their significance in modern electronic systems.