FCPF1300N80Z
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onsemi FCPF1300N80Z

Manufacturer No:
FCPF1300N80Z
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 800V 4A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCPF1300N80Z is a high-voltage MOSFET from onsemi, part of their SuperFET® II family. This MOSFET utilizes charge balance technology, which is designed to provide outstanding performance in terms of low on-resistance and high efficiency. It is packaged in a TO-220FP-3 configuration, making it suitable for a variety of high-power applications. The device is known for its robust characteristics, including high drain-source breakdown voltage and low drain-source resistance, making it an ideal choice for systems requiring reliable and efficient power management.

Key Specifications

ParameterValue
Continuous Drain Current4 A
Drain-Source On-Resistance (Rds(on))1.3 Ω @ 10 V, 2 A
Drain-Source Breakdown Voltage (Vds)800 V
Gate Threshold Voltage (Vgs(th))2.5 V @ 0.4 mA
Package TypeTO-220FP-3
Power Dissipation (Pd)24 W

Key Features

  • High-voltage super-junction (SJ) MOSFET technology for low on-resistance and high efficiency.
  • Charge balance technology for improved performance.
  • High drain-source breakdown voltage of 800 V.
  • Low drain-source on-resistance of 1.3 Ω @ 10 V, 2 A.
  • Robust TO-220FP-3 package for high-power applications.
  • Compliant with RoHS standards.

Applications

The FCPF1300N80Z MOSFET is suitable for a wide range of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • High-voltage power management in consumer electronics and appliances.

Q & A

  1. What is the continuous drain current of the FCPF1300N80Z MOSFET?
    The continuous drain current is 4 A.
  2. What is the drain-source breakdown voltage of the FCPF1300N80Z?
    The drain-source breakdown voltage is 800 V.
  3. What is the typical on-resistance of the FCPF1300N80Z?
    The typical on-resistance is 1.3 Ω @ 10 V, 2 A.
  4. In what package is the FCPF1300N80Z available?
    The FCPF1300N80Z is available in the TO-220FP-3 package.
  5. Is the FCPF1300N80Z RoHS compliant?
    Yes, the FCPF1300N80Z is RoHS compliant.
  6. What is the maximum power dissipation of the FCPF1300N80Z?
    The maximum power dissipation is 24 W.
  7. What technology does the FCPF1300N80Z use?
    The FCPF1300N80Z uses high-voltage super-junction (SJ) MOSFET technology with charge balance technology.
  8. What are some typical applications for the FCPF1300N80Z?
    Typical applications include power supplies, motor control systems, industrial automation, renewable energy systems, and high-voltage power management in consumer electronics.
  9. What is the gate threshold voltage of the FCPF1300N80Z?
    The gate threshold voltage is 2.5 V @ 0.4 mA.
  10. Where can I find detailed specifications for the FCPF1300N80Z?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):24W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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Same Series
FCPF1300N80Z
FCPF1300N80Z
MOSFET N-CH 800V 4A TO220F

Similar Products

Part Number FCPF1300N80Z FCPF4300N80Z
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2A, 10V 4.3Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 400µA 4.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 8.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 100 V 355 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 24W (Tc) 19.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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