FCPF1300N80Z
  • Share:

onsemi FCPF1300N80Z

Manufacturer No:
FCPF1300N80Z
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 800V 4A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCPF1300N80Z is a high-voltage MOSFET from onsemi, part of their SuperFET® II family. This MOSFET utilizes charge balance technology, which is designed to provide outstanding performance in terms of low on-resistance and high efficiency. It is packaged in a TO-220FP-3 configuration, making it suitable for a variety of high-power applications. The device is known for its robust characteristics, including high drain-source breakdown voltage and low drain-source resistance, making it an ideal choice for systems requiring reliable and efficient power management.

Key Specifications

ParameterValue
Continuous Drain Current4 A
Drain-Source On-Resistance (Rds(on))1.3 Ω @ 10 V, 2 A
Drain-Source Breakdown Voltage (Vds)800 V
Gate Threshold Voltage (Vgs(th))2.5 V @ 0.4 mA
Package TypeTO-220FP-3
Power Dissipation (Pd)24 W

Key Features

  • High-voltage super-junction (SJ) MOSFET technology for low on-resistance and high efficiency.
  • Charge balance technology for improved performance.
  • High drain-source breakdown voltage of 800 V.
  • Low drain-source on-resistance of 1.3 Ω @ 10 V, 2 A.
  • Robust TO-220FP-3 package for high-power applications.
  • Compliant with RoHS standards.

Applications

The FCPF1300N80Z MOSFET is suitable for a wide range of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • High-voltage power management in consumer electronics and appliances.

Q & A

  1. What is the continuous drain current of the FCPF1300N80Z MOSFET?
    The continuous drain current is 4 A.
  2. What is the drain-source breakdown voltage of the FCPF1300N80Z?
    The drain-source breakdown voltage is 800 V.
  3. What is the typical on-resistance of the FCPF1300N80Z?
    The typical on-resistance is 1.3 Ω @ 10 V, 2 A.
  4. In what package is the FCPF1300N80Z available?
    The FCPF1300N80Z is available in the TO-220FP-3 package.
  5. Is the FCPF1300N80Z RoHS compliant?
    Yes, the FCPF1300N80Z is RoHS compliant.
  6. What is the maximum power dissipation of the FCPF1300N80Z?
    The maximum power dissipation is 24 W.
  7. What technology does the FCPF1300N80Z use?
    The FCPF1300N80Z uses high-voltage super-junction (SJ) MOSFET technology with charge balance technology.
  8. What are some typical applications for the FCPF1300N80Z?
    Typical applications include power supplies, motor control systems, industrial automation, renewable energy systems, and high-voltage power management in consumer electronics.
  9. What is the gate threshold voltage of the FCPF1300N80Z?
    The gate threshold voltage is 2.5 V @ 0.4 mA.
  10. Where can I find detailed specifications for the FCPF1300N80Z?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):24W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$1.76
127

Please send RFQ , we will respond immediately.

Same Series
FCPF1300N80Z
FCPF1300N80Z
MOSFET N-CH 800V 4A TO220F

Similar Products

Part Number FCPF1300N80Z FCPF4300N80Z
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2A, 10V 4.3Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 400µA 4.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 8.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 100 V 355 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 24W (Tc) 19.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3