Overview
The NVD5407NT4G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for high-power applications requiring low on-resistance and high current handling. The MOSFET is packaged in a DPAK (TO-252) surface mount package, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Continuous Drain Current (Id) @ 25°C | 7.6A (Ta), 38A (Tc) |
| On-Resistance (Rds(on)) | 26 mΩ |
| Package Type | DPAK (TO-252) |
| Power Dissipation (Pd) | 2.9W (Ta), 75W (Tc) |
Key Features
- Low on-resistance (Rds(on)) of 26 mΩ, reducing power losses and improving efficiency.
- High continuous drain current of 7.6A at ambient temperature and 38A at case temperature.
- High drain to source voltage (Vdss) of 40V, making it suitable for a wide range of power applications.
- DPAK (TO-252) surface mount package for easy integration into various designs.
- High power dissipation capabilities, with 2.9W at ambient temperature and 75W at case temperature.
Applications
The NVD5407NT4G is versatile and can be used in various high-power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Automotive systems, such as battery management and power steering.
- Industrial control and automation systems.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the maximum drain to source voltage (Vdss) of the NVD5407NT4G?
The maximum drain to source voltage (Vdss) is 40V. - What is the continuous drain current (Id) of the NVD5407NT4G at 25°C?
The continuous drain current (Id) at 25°C is 7.6A (Ta) and 38A (Tc). - What is the on-resistance (Rds(on)) of the NVD5407NT4G?
The on-resistance (Rds(on)) is 26 mΩ. - What package type is the NVD5407NT4G available in?
The NVD5407NT4G is available in a DPAK (TO-252) surface mount package. - What are the power dissipation capabilities of the NVD5407NT4G?
The power dissipation is 2.9W at ambient temperature (Ta) and 75W at case temperature (Tc). - What are some common applications for the NVD5407NT4G?
Common applications include power supplies, motor control systems, automotive systems, industrial control systems, and renewable energy systems. - Where can I find the datasheet for the NVD5407NT4G?
The datasheet can be found on the official onsemi website or through distributors like Mouser, Digi-Key, and Heisener. - Is the NVD5407NT4G suitable for high-frequency applications?
Yes, the NVD5407NT4G is designed for high-power and high-frequency applications due to its low on-resistance and high current handling capabilities. - Can the NVD5407NT4G be used in automotive applications?
Yes, it is suitable for automotive applications such as battery management and power steering due to its robust specifications and reliability. - How do I ensure proper thermal management for the NVD5407NT4G?
Proper thermal management can be achieved by using a suitable heat sink and ensuring good thermal conductivity between the device and the heat sink.
