Overview
The STP45N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device features an enhanced trench gate structure, resulting in very low on-state resistance and reduced internal capacitance and gate charge. This design enables faster and more efficient switching, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STP45N10F7 | |
| Drain-Source Voltage (VDS) | 100 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 45 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 32 | A |
| Pulsed Drain Current (IDM) | 180 | A |
| Total Dissipation at Tc = 25 °C (PTOT) | 60 | W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.0145 (typ.), 0.018 (max.) | Ω |
| Gate Threshold Voltage (VGS(th)) | 2.5 to 4.5 | V |
| Operating Junction Temperature (TJ) | -55 to 175 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 2.5 | °C/W |
| Package | TO-220 |
Key Features
- Among the lowest RDS(on) on the market, with a typical value of 0.0145 Ω and a maximum value of 0.018 Ω.
- Excellent figure of merit (FoM) for high efficiency.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness, ensuring robust operation under various conditions.
- Enhanced trench gate structure reducing internal capacitance and gate charge for faster switching.
Applications
The STP45N10F7 is designed for high-power switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drives.
- Industrial automation and control systems.
- Aerospace and defense applications requiring high reliability.
- Automotive systems, especially those requiring high power and efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP45N10F7?
The maximum drain-source voltage (VDS) is 100 V.
- What is the typical on-state resistance (RDS(on)) of the STP45N10F7?
The typical on-state resistance (RDS(on)) is 0.0145 Ω.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 45 A.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is from 2.5 V to 4.5 V.
- What is the operating junction temperature range?
The operating junction temperature range is from -55 °C to 175 °C.
- What package types are available for the STP45N10F7?
The STP45N10F7 is available in the TO-220 package.
- What are the key features of the STripFET™ F7 technology?
The STripFET™ F7 technology features an enhanced trench gate structure, low RDS(on), excellent FoM, low Crss/Ciss ratio, and high avalanche ruggedness.
- What are some typical applications for the STP45N10F7?
Typical applications include power supplies, DC-DC converters, motor control, industrial automation, aerospace, and automotive systems.
- What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?
The thermal resistance junction-case (Rthj-case) is 2.5 °C/W.
- What is the single pulse avalanche energy (EAS) for the STP45N10F7?
The single pulse avalanche energy (EAS) is 190 mJ.
