Overview
The MTB30P06VT4G Power MOSFET, produced by onsemi, is designed to withstand high energy in avalanche and commutation modes. It is tailored for low voltage, high-speed switching applications in power supplies, converters, and power motor controls. This device is particularly well-suited for bridge circuits where diode speed and commutating safe operating areas are critical, offering an additional safety margin against unexpected voltage transients.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 60 | Vdc |
| Drain-to-Gate Voltage (VDGR) | 60 | Vdc |
| Gate-to-Source Voltage (VGSM) | ±15 | Vdc |
| Continuous Drain Current (ID) at 25°C | 30 | A |
| Continuous Drain Current (ID) at 100°C | 19 | A |
| Single Pulse Drain Current (IDM) | 105 | A |
| Total Power Dissipation at 25°C | 125 | W |
| Operating and Storage Temperature Range | -55 to 175 | °C |
| Static Drain-to-Source On-Resistance (RDS(on)) | 0.08 | Ω |
| Input Capacitance (Ciss) | 2190 | pF |
| Package Type | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Key Features
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- AEC−Q101 Qualified and PPAP Capable
- Pb−Free and RoHS Compliant
Applications
The MTB30P06VT4G MOSFET is particularly suited for low voltage, high-speed switching applications in:
- Power supplies
- Converters
- Power motor controls
- Bridge circuits where diode speed and commutating safe operating areas are critical
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the MTB30P06VT4G MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current (ID) at 25°C for the MTB30P06VT4G MOSFET?
The continuous drain current (ID) at 25°C is 30 A.
- What is the package type of the MTB30P06VT4G MOSFET?
The package types are TO-263-3, D2Pak (2 Leads + Tab), and TO-263AB.
- Is the MTB30P06VT4G MOSFET RoHS compliant?
- What are the typical applications of the MTB30P06VT4G MOSFET?
- What is the maximum operating temperature of the MTB30P06VT4G MOSFET?
- What is the static drain-to-source on-resistance (RDS(on)) of the MTB30P06VT4G MOSFET?
DS(on)) is 0.08 Ω. - Is the MTB30P06VT4G MOSFET AEC−Q101 qualified?
- What is the input capacitance (Ciss) of the MTB30P06VT4G MOSFET?
iss) is 2190 pF. - What is the maximum lead temperature for soldering purposes?
