Overview
The STH315N10F7-6 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. This device utilizes the advanced STripFET F7 technology, which features an enhanced trench gate structure. This design results in very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching. The MOSFET is packaged in the H²PAK-6 format, making it suitable for high-power applications requiring low resistance and high current handling.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vds) | 100 | V |
| Continuous Drain Current (Id) @ 25°C | 180 | A |
| On-State Resistance (Rds(on)) @ 10V | 2.1 mΩ | mΩ |
| Gate Threshold Voltage (Vgs(th)) @ Id | 4.5 V @ 250 µA | V |
| Gate Charge (Qg) @ Vgs | 180 nC @ 10 V | nC |
| Input Capacitance (Ciss) @ Vds | 12800 pF @ 25 V | pF |
| Maximum Gate Voltage (Vgs) | ±20 | V |
| Power Dissipation (Max) @ Tc | 315 W | W |
| Package | H²PAK-6 (TO-263-7, D2Pak) |
Key Features
- AEC-Q101 qualified, ensuring reliability in automotive applications.
- Among the lowest Rds(on) on the market, enhancing efficiency.
- Excellent figure of merit (FoM) for high-performance switching.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness for robust operation.
Applications
The STH315N10F7-6 is designed for various high-power switching applications, including but not limited to:
- Automotive systems requiring high current and low resistance.
- Industrial motor control and inverter systems.
- Power supplies and DC-DC converters.
- High-frequency switching applications where low on-state resistance and fast switching times are critical.
Q & A
- What is the maximum drain to source voltage of the STH315N10F7-6?
The maximum drain to source voltage (Vds) is 100 V. - What is the continuous drain current rating of the STH315N10F7-6 at 25°C?
The continuous drain current (Id) at 25°C is 180 A. - What is the typical on-state resistance of the STH315N10F7-6?
The typical on-state resistance (Rds(on)) at 10 V is 2.1 mΩ. - What is the gate threshold voltage of the STH315N10F7-6?
The gate threshold voltage (Vgs(th)) is 4.5 V at 250 µA. - What is the maximum gate charge of the STH315N10F7-6?
The maximum gate charge (Qg) at 10 V is 180 nC. - What is the input capacitance of the STH315N10F7-6?
The input capacitance (Ciss) at 25 V is 12800 pF. - What is the maximum gate voltage for the STH315N10F7-6?
The maximum gate voltage (Vgs) is ±20 V. - What is the power dissipation rating of the STH315N10F7-6?
The maximum power dissipation at Tc is 315 W. - In what package is the STH315N10F7-6 available?
The STH315N10F7-6 is available in the H²PAK-6 (TO-263-7, D2Pak) package. - Is the STH315N10F7-6 AEC-Q101 qualified?
Yes, the STH315N10F7-6 is AEC-Q101 qualified.
