BSS138-F169
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onsemi BSS138-F169

Manufacturer No:
BSS138-F169
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138 is an N-Channel logic level enhancement mode field effect transistor produced by onsemi. It is fabricated using onsemi's proprietary, high cell density, DMOS technology. This transistor is designed to minimize on-state resistance, providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications.

Key Specifications

Parameter Symbol Min Max Unit
Drain-Source Voltage VDSS 50 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID 0.22 A
Pulsed Drain Current ID 0.88 A
Maximum Power Dissipation PD 0.36 W
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C
Gate Threshold Voltage VGS(th) 0.8 1.3 1.5 V
Static Drain-Source On-Resistance RDS(on) 0.7 3.5 Ω @ VGS = 10 V, ID = 0.22 A
Static Drain-Source On-Resistance RDS(on) 1.0 6.0 Ω @ VGS = 4.5 V, ID = 0.22 A

Key Features

  • High cell density DMOS technology for extremely low RDS(on)
  • Rugged and reliable performance
  • Fast switching capabilities
  • Logic level gate drive for ease of use with microcontrollers and other logic devices
  • Low on-state resistance: RDS(on) = 3.5 Ω @ VGS = 10 V, ID = 0.22 A
  • High drain-source breakdown voltage: VDSS = 50 V

Applications

  • Small servo motor control
  • Power MOSFET gate drivers
  • Other switching applications
  • Low voltage, low current circuits

Q & A

  1. What is the maximum drain-source voltage of the BSS138?

    The maximum drain-source voltage (VDSS) is 50 V.

  2. What is the typical on-state resistance of the BSS138 at VGS = 10 V and ID = 0.22 A?

    The typical on-state resistance (RDS(on)) is 3.5 Ω.

  3. What is the gate threshold voltage range of the BSS138?

    The gate threshold voltage (VGS(th)) range is from 0.8 V to 1.5 V.

  4. What are the typical applications of the BSS138?

    Typical applications include small servo motor control, power MOSFET gate drivers, and other switching applications.

  5. What is the maximum continuous drain current of the BSS138?

    The maximum continuous drain current (ID) is 0.22 A.

  6. What is the maximum power dissipation of the BSS138?

    The maximum power dissipation (PD) is 0.36 W.

  7. What is the operating and storage junction temperature range of the BSS138?

    The operating and storage junction temperature range (TJ, TSTG) is from -55°C to 150°C.

  8. How does the on-state resistance of the BSS138 vary with temperature?

    The on-state resistance increases with temperature; see the typical characteristics section in the datasheet for detailed graphs.

  9. What is the gate-source voltage range for the BSS138?

    The gate-source voltage (VGSS) range is ±20 V.

  10. What are the dynamic characteristics of the BSS138?

    The dynamic characteristics include turn-on delay time, turn-on rise time, turn-off delay time, and turn-off fall time; see the datasheet for specific values.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:27 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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