Overview
The AO3407A is a 30V P-Channel Enhancement Mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. This device utilizes advanced trench technology to provide excellent on-resistance (RDS(ON)) and low gate charge, making it highly efficient for various power management and switching applications. The AO3407A is packaged in a compact SOT23 form factor, which is ideal for space-constrained designs. It is RoHS and Green Product compliant, ensuring full functionality and reliability while meeting environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V |
| Drain Current | ID | -4.3 | A |
| Gate-Source Voltage | VGS | ±20 | V |
| On-State Resistance (at VGS = -10V) | RDS(ON) | < 48 | mΩ |
| On-State Resistance (at VGS = -4.5V) | RDS(ON) | < 78 | mΩ |
| Maximum Junction Temperature | TJ | 150 | °C |
| Maximum Power Dissipation | PD | 1.4 | W |
| Gate Charge | Qg | 9.2 | nC |
| Rise Time | tr | 5.5 | ns |
Key Features
- Advanced trench technology for excellent RDS(ON) and low gate charge.
- Compact SOT23 package, ideal for space-constrained designs.
- RoHS and Green Product compliant, ensuring environmental sustainability and reliability.
- Low on-state resistance: RDS(ON) < 48mΩ at VGS = -10V and RDS(ON) < 78mΩ at VGS = -4.5V.
- High-speed switching capabilities with rise time of 5.5 ns.
- Suitable for use as a load switch or in PWM applications.
Applications
- Load switching applications due to its low RDS(ON) and fast switching times.
- Pulse Width Modulation (PWM) applications requiring high efficiency and low power loss.
- Power management functions in various electronic devices.
- High-speed line drivers and other high-frequency applications).
- Small power switching and general power management in consumer electronics).
Q & A
- What is the maximum drain-source voltage of the AO3407A MOSFET?
The maximum drain-source voltage (VDS) of the AO3407A is -30V.
- What is the maximum drain current of the AO3407A MOSFET?
The maximum drain current (ID) of the AO3407A is -4.3A.
- What is the typical on-state resistance of the AO3407A at VGS = -10V?
The typical on-state resistance (RDS(ON)) at VGS = -10V is less than 48mΩ.
- What is the maximum gate-source voltage of the AO3407A?
The maximum gate-source voltage (VGS) is ±20V.
- What is the package type of the AO3407A MOSFET?
The AO3407A is packaged in a SOT23 form factor.
- Is the AO3407A RoHS compliant?
Yes, the AO3407A is RoHS and Green Product compliant.
- What are the typical applications of the AO3407A MOSFET?
The AO3407A is suitable for use as a load switch or in PWM applications, as well as in power management functions and high-speed line drivers.
- What is the maximum junction temperature of the AO3407A?
The maximum junction temperature (TJ) is 150°C.
- What is the rise time of the AO3407A MOSFET?
The rise time (tr) of the AO3407A is 5.5 ns.
- What is the gate charge of the AO3407A MOSFET?
The total gate charge (Qg) of the AO3407A is approximately 9.2 nC.
