BSH112,235
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NXP USA Inc. BSH112,235

Manufacturer No:
BSH112,235
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The BSH112,235 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by NXP USA Inc. This N-Channel MOSFET is designed for various electronic applications requiring high efficiency and reliability. Although the component is currently listed as obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
Manufacturer Part NumberBSH112,235
ManufacturerNXP Semiconductors / Freescale
DescriptionMOSFET N-CH 60V 300MA SOT-23
Package / CaseTO-236AB (SOT23)
Vgs(th) (Max) @ Id2V @ 1mA
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Power Dissipation (Max)830mW (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Input Capacitance (Ciss) (Max) @ Vds40pF @ 10V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)

Key Features

  • N-Channel MOSFET: The BSH112,235 is an N-Channel MOSFET, suitable for applications requiring low on-resistance and high current handling.
  • High Voltage Rating: It has a drain to source voltage (Vdss) of 60V, making it suitable for applications that require high voltage tolerance.
  • Low On-Resistance: The MOSFET features a maximum on-resistance (Rds On) of 5 Ohms at 500mA and 10V, ensuring efficient power handling.
  • Surface Mount Package: The component is packaged in a SOT-23 (TO-236AB) package, which is convenient for surface mount technology (SMT) assembly.
  • Wide Operating Temperature Range: It operates over a temperature range of -65°C to 150°C, making it versatile for various environmental conditions.

Applications

The BSH112,235 MOSFET is suitable for a variety of applications, including but not limited to:

  • Power Management: It can be used in power management circuits, such as voltage regulators, DC-DC converters, and power switches.
  • Motor Control: Its high current and voltage ratings make it suitable for motor control applications.
  • Audio Amplifiers: It can be used in audio amplifier circuits due to its low on-resistance and high current handling capabilities.
  • General Purpose Switching: The MOSFET can be used in general-purpose switching applications where high efficiency and reliability are required.

Q & A

  1. What is the part number of this MOSFET?
    The part number of this MOSFET is BSH112,235.
  2. Who is the manufacturer of the BSH112,235?
    The manufacturer is NXP USA Inc.
  3. What is the package type of the BSH112,235?
    The package type is SOT-23 (TO-236AB).
  4. What is the maximum drain to source voltage (Vdss) of the BSH112,235?
    The maximum drain to source voltage (Vdss) is 60V.
  5. What is the maximum continuous drain current (Id) at 25°C?
    The maximum continuous drain current (Id) at 25°C is 300mA.
  6. What is the maximum on-resistance (Rds On) of the BSH112,235?
    The maximum on-resistance (Rds On) is 5 Ohms at 500mA and 10V.
  7. Is the BSH112,235 still in production?
    No, the BSH112,235 is listed as obsolete and no longer manufactured.
  8. What is the operating temperature range of the BSH112,235?
    The operating temperature range is -65°C to 150°C (TJ).
  9. What is the input capacitance (Ciss) of the BSH112,235?
    The input capacitance (Ciss) is 40pF at 10V.
  10. What are some common applications of the BSH112,235?
    Common applications include power management, motor control, audio amplifiers, and general-purpose switching.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSH112,235 BSH111,235
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 1 nC @ 8 V
Vgs (Max) ±15V ±10V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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