BSH112,235
  • Share:

NXP USA Inc. BSH112,235

Manufacturer No:
BSH112,235
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH112,235 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by NXP USA Inc. This N-Channel MOSFET is designed for various electronic applications requiring high efficiency and reliability. Although the component is currently listed as obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
Manufacturer Part NumberBSH112,235
ManufacturerNXP Semiconductors / Freescale
DescriptionMOSFET N-CH 60V 300MA SOT-23
Package / CaseTO-236AB (SOT23)
Vgs(th) (Max) @ Id2V @ 1mA
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Power Dissipation (Max)830mW (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Input Capacitance (Ciss) (Max) @ Vds40pF @ 10V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)

Key Features

  • N-Channel MOSFET: The BSH112,235 is an N-Channel MOSFET, suitable for applications requiring low on-resistance and high current handling.
  • High Voltage Rating: It has a drain to source voltage (Vdss) of 60V, making it suitable for applications that require high voltage tolerance.
  • Low On-Resistance: The MOSFET features a maximum on-resistance (Rds On) of 5 Ohms at 500mA and 10V, ensuring efficient power handling.
  • Surface Mount Package: The component is packaged in a SOT-23 (TO-236AB) package, which is convenient for surface mount technology (SMT) assembly.
  • Wide Operating Temperature Range: It operates over a temperature range of -65°C to 150°C, making it versatile for various environmental conditions.

Applications

The BSH112,235 MOSFET is suitable for a variety of applications, including but not limited to:

  • Power Management: It can be used in power management circuits, such as voltage regulators, DC-DC converters, and power switches.
  • Motor Control: Its high current and voltage ratings make it suitable for motor control applications.
  • Audio Amplifiers: It can be used in audio amplifier circuits due to its low on-resistance and high current handling capabilities.
  • General Purpose Switching: The MOSFET can be used in general-purpose switching applications where high efficiency and reliability are required.

Q & A

  1. What is the part number of this MOSFET?
    The part number of this MOSFET is BSH112,235.
  2. Who is the manufacturer of the BSH112,235?
    The manufacturer is NXP USA Inc.
  3. What is the package type of the BSH112,235?
    The package type is SOT-23 (TO-236AB).
  4. What is the maximum drain to source voltage (Vdss) of the BSH112,235?
    The maximum drain to source voltage (Vdss) is 60V.
  5. What is the maximum continuous drain current (Id) at 25°C?
    The maximum continuous drain current (Id) at 25°C is 300mA.
  6. What is the maximum on-resistance (Rds On) of the BSH112,235?
    The maximum on-resistance (Rds On) is 5 Ohms at 500mA and 10V.
  7. Is the BSH112,235 still in production?
    No, the BSH112,235 is listed as obsolete and no longer manufactured.
  8. What is the operating temperature range of the BSH112,235?
    The operating temperature range is -65°C to 150°C (TJ).
  9. What is the input capacitance (Ciss) of the BSH112,235?
    The input capacitance (Ciss) is 40pF at 10V.
  10. What are some common applications of the BSH112,235?
    Common applications include power management, motor control, audio amplifiers, and general-purpose switching.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.02
6,429

Please send RFQ , we will respond immediately.

Same Series
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BSH112,235 BSH111,235
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 1 nC @ 8 V
Vgs (Max) ±15V ±10V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

BAS16/DG215
BAS16/DG215
NXP USA Inc.
RECTIFIER DIODE, 0.215A, 100V
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
ADC1004S030TS/C1:1
ADC1004S030TS/C1:1
NXP USA Inc.
IC ADC 10BIT 28SSOP
SAF4000EL/101S500Y
SAF4000EL/101S500Y
NXP USA Inc.
SOFTWARE DEFINED RADIO
MKL27Z256VFM4
MKL27Z256VFM4
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 32QFN
P89LPC935FDH,518
P89LPC935FDH,518
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
LPC11E67JBD48E
LPC11E67JBD48E
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
HEF4053BT/AUJ
HEF4053BT/AUJ
NXP USA Inc.
IC ANLG SWITCH TRPL SPDT 16SOIC
TDA7052BT/N1,112
TDA7052BT/N1,112
NXP USA Inc.
IC AMP CLASS AB MONO 550MW 8SO
MC56F82723VLC557
MC56F82723VLC557
NXP USA Inc.
MICROCONTROLLER, 32-BIT, FLASH,
PSMN2R9-30MLC115
PSMN2R9-30MLC115
NXP USA Inc.
NOW NEXPERIA PSMN2R9-30MLC 70A,
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD