BSH112,235
  • Share:

NXP USA Inc. BSH112,235

Manufacturer No:
BSH112,235
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH112,235 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by NXP USA Inc. This N-Channel MOSFET is designed for various electronic applications requiring high efficiency and reliability. Although the component is currently listed as obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
Manufacturer Part NumberBSH112,235
ManufacturerNXP Semiconductors / Freescale
DescriptionMOSFET N-CH 60V 300MA SOT-23
Package / CaseTO-236AB (SOT23)
Vgs(th) (Max) @ Id2V @ 1mA
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Power Dissipation (Max)830mW (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Input Capacitance (Ciss) (Max) @ Vds40pF @ 10V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)

Key Features

  • N-Channel MOSFET: The BSH112,235 is an N-Channel MOSFET, suitable for applications requiring low on-resistance and high current handling.
  • High Voltage Rating: It has a drain to source voltage (Vdss) of 60V, making it suitable for applications that require high voltage tolerance.
  • Low On-Resistance: The MOSFET features a maximum on-resistance (Rds On) of 5 Ohms at 500mA and 10V, ensuring efficient power handling.
  • Surface Mount Package: The component is packaged in a SOT-23 (TO-236AB) package, which is convenient for surface mount technology (SMT) assembly.
  • Wide Operating Temperature Range: It operates over a temperature range of -65°C to 150°C, making it versatile for various environmental conditions.

Applications

The BSH112,235 MOSFET is suitable for a variety of applications, including but not limited to:

  • Power Management: It can be used in power management circuits, such as voltage regulators, DC-DC converters, and power switches.
  • Motor Control: Its high current and voltage ratings make it suitable for motor control applications.
  • Audio Amplifiers: It can be used in audio amplifier circuits due to its low on-resistance and high current handling capabilities.
  • General Purpose Switching: The MOSFET can be used in general-purpose switching applications where high efficiency and reliability are required.

Q & A

  1. What is the part number of this MOSFET?
    The part number of this MOSFET is BSH112,235.
  2. Who is the manufacturer of the BSH112,235?
    The manufacturer is NXP USA Inc.
  3. What is the package type of the BSH112,235?
    The package type is SOT-23 (TO-236AB).
  4. What is the maximum drain to source voltage (Vdss) of the BSH112,235?
    The maximum drain to source voltage (Vdss) is 60V.
  5. What is the maximum continuous drain current (Id) at 25°C?
    The maximum continuous drain current (Id) at 25°C is 300mA.
  6. What is the maximum on-resistance (Rds On) of the BSH112,235?
    The maximum on-resistance (Rds On) is 5 Ohms at 500mA and 10V.
  7. Is the BSH112,235 still in production?
    No, the BSH112,235 is listed as obsolete and no longer manufactured.
  8. What is the operating temperature range of the BSH112,235?
    The operating temperature range is -65°C to 150°C (TJ).
  9. What is the input capacitance (Ciss) of the BSH112,235?
    The input capacitance (Ciss) is 40pF at 10V.
  10. What are some common applications of the BSH112,235?
    Common applications include power management, motor control, audio amplifiers, and general-purpose switching.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.02
6,429

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP

Similar Products

Part Number BSH112,235 BSH111,235
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 1 nC @ 8 V
Vgs (Max) ±15V ±10V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

BB178,335
BB178,335
NXP USA Inc.
DIODE VHF VAR CAP 32V SOD523
LPC2131FBD64/01,15
LPC2131FBD64/01,15
NXP USA Inc.
IC MCU 16/32BIT 32KB FLSH 64LQFP
MCHC908QT2CDWER
MCHC908QT2CDWER
NXP USA Inc.
IC MCU 8BIT 1.5KB FLASH 8SO
S9S12G192F0VLHR
S9S12G192F0VLHR
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 64LQFP
LPC4330FET100Y
LPC4330FET100Y
NXP USA Inc.
IC MCU 32BIT ROMLESS 100TFBGA
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
TJA1042TK/3/1,118
TJA1042TK/3/1,118
NXP USA Inc.
HIGH-SPEED CAN TRANSCEIVER WITH
74HC2G08DC/C125
74HC2G08DC/C125
NXP USA Inc.
IC GATE AND 2CH 2-INP 8VSSOP
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE
PCA24S08AD
PCA24S08AD
NXP USA Inc.
IC EEPROM 8KBIT 400KHZ 8SO
MPX53GP
MPX53GP
NXP USA Inc.
SENSOR GAUGE PRESSURE 7 PSI MAX