onsemi FQT7N10LTF

Manufacturer No:: FQT7N10LTF
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 100V 1.7A SOT223-4
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Product Introduction

Overview

The FQT7N10LTF is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is designed using onsemi's proprietary planar stripe and DMOS technology, offering high performance and reliability. It features a low on-resistance and is suitable for various power management and motor driver applications. The FQT7N10LTF is packaged in a 3-pin SOT-223 package, making it compact and efficient for use in a wide range of electronic systems.

Key Specifications

Parameter	Value
V_DS (Drain-Source Voltage)	100 V
I_D (Continuous Drain Current)	1.7 A
R_DS(ON) (On-Resistance)	350 mΩ @ V_GS = 10 V, I_D = 0.85 A
V_GS(th) (Threshold Voltage)	2 V
Package	3-Pin SOT-223
Power Dissipation	2 W

Key Features

Dual protection with temperature and current limit
Low on-resistance for efficient power handling
Enhancement mode N-Channel MOSFET
Compact 3-pin SOT-223 package
Rohs compliant

Applications

The FQT7N10LTF is primarily used in motor driver applications, power management systems, and other high-performance electronic circuits. Its low on-resistance and high current handling capabilities make it suitable for a variety of power-intensive applications.

Q & A

What is the maximum drain-source voltage of the FQT7N10LTF?
The maximum drain-source voltage is 100 V.
What is the continuous drain current rating of the FQT7N10LTF?
The continuous drain current rating is 1.7 A.
What is the on-resistance of the FQT7N10LTF?
The on-resistance is 350 mΩ @ V_GS = 10 V, I_D = 0.85 A.
What is the threshold voltage of the FQT7N10LTF?
The threshold voltage is 2 V.
In what package is the FQT7N10LTF available?
The FQT7N10LTF is available in a 3-pin SOT-223 package.
Is the FQT7N10LTF RoHS compliant?
Yes, the FQT7N10LTF is RoHS compliant.
What are the primary applications of the FQT7N10LTF?
The primary applications include motor driver and power management systems.
What technology is used to produce the FQT7N10LTF?
The FQT7N10LTF is produced using onsemi's proprietary planar stripe and DMOS technology.
What is the power dissipation rating of the FQT7N10LTF?
The power dissipation rating is 2 W.
Does the FQT7N10LTF have any built-in protection features?
Yes, it has dual protection with temperature and current limit.

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UnitPrice: $0.76

Quantity: 341

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Similar Products

Part Number	FQT7N10LTF	FQT7N10TF
Manufacturer	onsemi	onsemi
Product Status	Active	Last Time Buy
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	100 V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	10V
Rds On (Max) @ Id, Vgs	350mOhm @ 850mA, 10V	350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 5 V	7.5 nC @ 10 V
Vgs (Max)	±20V	±25V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 25 V	250 pF @ 25 V
FET Feature	-	-
Power Dissipation (Max)	2W (Tc)	2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Supplier Device Package	SOT-223-4	SOT-223-4
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA

Related Product By Categories

Related Product By Brand

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	290 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223-4
Package / Case:	TO-261-4, TO-261AA