FQT7N10LTF
  • Share:

onsemi FQT7N10LTF

Manufacturer No:
FQT7N10LTF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 1.7A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQT7N10LTF is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is designed using onsemi's proprietary planar stripe and DMOS technology, offering high performance and reliability. It features a low on-resistance and is suitable for various power management and motor driver applications. The FQT7N10LTF is packaged in a 3-pin SOT-223 package, making it compact and efficient for use in a wide range of electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)1.7 A
RDS(ON) (On-Resistance)350 mΩ @ VGS = 10 V, ID = 0.85 A
VGS(th) (Threshold Voltage)2 V
Package3-Pin SOT-223
Power Dissipation2 W

Key Features

  • Dual protection with temperature and current limit
  • Low on-resistance for efficient power handling
  • Enhancement mode N-Channel MOSFET
  • Compact 3-pin SOT-223 package
  • Rohs compliant

Applications

The FQT7N10LTF is primarily used in motor driver applications, power management systems, and other high-performance electronic circuits. Its low on-resistance and high current handling capabilities make it suitable for a variety of power-intensive applications.

Q & A

  1. What is the maximum drain-source voltage of the FQT7N10LTF?
    The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current rating of the FQT7N10LTF?
    The continuous drain current rating is 1.7 A.
  3. What is the on-resistance of the FQT7N10LTF?
    The on-resistance is 350 mΩ @ VGS = 10 V, ID = 0.85 A.
  4. What is the threshold voltage of the FQT7N10LTF?
    The threshold voltage is 2 V.
  5. In what package is the FQT7N10LTF available?
    The FQT7N10LTF is available in a 3-pin SOT-223 package.
  6. Is the FQT7N10LTF RoHS compliant?
    Yes, the FQT7N10LTF is RoHS compliant.
  7. What are the primary applications of the FQT7N10LTF?
    The primary applications include motor driver and power management systems.
  8. What technology is used to produce the FQT7N10LTF?
    The FQT7N10LTF is produced using onsemi's proprietary planar stripe and DMOS technology.
  9. What is the power dissipation rating of the FQT7N10LTF?
    The power dissipation rating is 2 W.
  10. Does the FQT7N10LTF have any built-in protection features?
    Yes, it has dual protection with temperature and current limit.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.76
341

Please send RFQ , we will respond immediately.

Same Series
NZT751
NZT751
TRANS PNP 60V 4A SOT223-4
PZTA42
PZTA42
TRANS NPN 300V 0.5A SOT223
FQT4N20LTF
FQT4N20LTF
MOSFET N-CH 200V 850MA SOT223-4
FQT1N80TF-WS
FQT1N80TF-WS
MOSFET N-CH 800V 200MA SOT223-3
IRLM110ATF
IRLM110ATF
MOSFET N-CH 100V 1.5A SOT223-4

Similar Products

Part Number FQT7N10LTF FQT7N10TF
Manufacturer onsemi onsemi
Product Status Active Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 850mA, 10V 350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 5 V 7.5 nC @ 10 V
Vgs (Max) ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 25 V 250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2W (Tc) 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3