Overview
The FGHL75T65MQD is a Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) produced by onsemi. This device integrates 4th generation mid-speed IGBT technology along with a full current-rated copak diode. It is designed to offer high performance and reliability in various power conversion applications. The FGHL75T65MQD features a maximum collector-emitter voltage of 650 V and a maximum collector current of 75 A at 100°C, making it suitable for demanding power electronics applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-to-Emitter Voltage | VCES | 650 | V |
| Gate-to-Emitter Voltage | VGES | ±20 | V |
| Transient Gate-to-Emitter Voltage | VGES | ±30 | V |
| Collector Current (TC = 25°C) | IC | 80 | A |
| Collector Current (TC = 100°C) | IC | 75 | A |
| Pulsed Collector Current | ICM | 300 | A |
| Diode Forward Current (TC = 25°C) | IF | 80 | A |
| Diode Forward Current (TC = 65°C) | IF | 75 | A |
| Pulsed Diode Maximum Forward Current | IFM | 300 | A |
| Maximum Power Dissipation (TC = 25°C) | PD | 375 | W |
| Maximum Junction Temperature | TJ | 175 | °C |
| Collector-Emitter Saturation Voltage (Typ.) | VCE(sat) | 1.45 | V |
| Gate-Emitter Threshold Voltage | VGE(th) | 3.0 - 6.0 | V |
| Total Gate Charge | Qg | 145 | nC |
| Rise Time (Typ.) | tr | 29 | ns |
| Output Capacitance (Typ.) | Coes | 131 | pF |
Key Features
- Field stop 4th generation mid-speed IGBT technology
- Full current-rated copak diode
- Maximum junction temperature of 175°C
- Positive temperature coefficient for easy parallel operating
- High current capability with low saturation voltage (VCE(sat) = 1.45 V @ IC = 75 A)
- 100% tested for ILM (Inductive Load Measurement)
- Smooth and optimized switching characteristics
- Tight parameter distribution
- RoHS compliant
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Energy Storage Systems (ESS)
- Power Factor Correction (PFC) and Converters
Q & A
- What is the maximum collector-emitter voltage of the FGHL75T65MQD?
The maximum collector-emitter voltage is 650 V.
- What is the maximum collector current at 100°C?
The maximum collector current at 100°C is 75 A.
- What is the typical collector-emitter saturation voltage?
The typical collector-emitter saturation voltage is 1.45 V at IC = 75 A.
- What is the maximum junction temperature?
The maximum junction temperature is 175°C.
- Is the FGHL75T65MQD RoHS compliant?
- What are the typical applications of the FGHL75T65MQD?
The typical applications include solar inverters, UPS, ESS, PFC, and converters.
- What is the package type of the FGHL75T65MQD?
The package type is TO-247.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation at 25°C is 375 W.
- What is the total gate charge?
The total gate charge is 145 nC.
- What is the rise time of the FGHL75T65MQD?
The rise time is typically 29 ns.
