Overview
The STGWA40H65DFB2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It belongs to the HB2 series, which is an evolution of the advanced proprietary trench gate field-stop structure. This IGBT is designed to maximize efficiency for a wide range of fast applications, featuring improved conduction and reduced switching energy. It includes a very fast and soft recovery diode co-packaged in antiparallel with the IGBT, enhancing its performance in high-speed applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 650 | V |
| Continuous collector current at TC = 25 °C | 40 | A |
| Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) | 160 | A |
| Gate-emitter voltage | ±20 | V |
| Transient gate-emitter voltage (tp ≤ 10 μs) | ±30 | V |
| Operating junction temperature range | -55 to 175 | °C |
| Total power dissipation at TC = 25 °C | 230 | W |
| Thermal resistance junction-case (IGBT) | 0.65 | °C/W |
| Thermal resistance junction-case (diode) | 1.14 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 40 A | 1.55 | V |
| Forward on-voltage (VF) at IF = 40 A | 1.7 | V |
| Package | TO-247 long leads |
Key Features
- Low VCE(sat): 1.55 V (typ.) at IC = 40 A, ensuring low conduction losses.
- Very fast and soft recovery diode: Co-packaged in antiparallel with the IGBT for enhanced performance in high-speed applications.
- Minimized tail current: Reduces switching losses and improves overall efficiency.
- Tight parameter distribution: Ensures consistent performance across devices.
- Low thermal resistance: 0.65 °C/W for the IGBT and 1.14 °C/W for the diode, facilitating better heat dissipation.
- Positive VCE(sat) temperature coefficient: Helps in maintaining stable performance over a wide temperature range.
- High blocking voltage and current ratings: 650 V and 40 A, respectively, making it suitable for a variety of high-power applications.
- RoHS compliance: The device is packaged in an ECOPACK2 compliant package, ensuring environmental friendliness.
Applications
The STGWA40H65DFB2 is suitable for a wide range of applications, including:
- Industrial power conversion: Such as DC-DC converters, inverters, and power supplies.
- Telecom and datacom: For high-power switching and power management.
- Micro-inverters and solar energy systems: Where high efficiency and reliability are crucial.
- Motor drives and control systems: For efficient and reliable motor control.
Q & A
- What is the maximum collector-emitter voltage of the STGWA40H65DFB2?
The maximum collector-emitter voltage (VCE) is 650 V.
- What is the continuous collector current rating at 25 °C?
The continuous collector current rating at 25 °C is 40 A.
- What type of package does the STGWA40H65DFB2 come in?
The STGWA40H65DFB2 comes in a TO-247 long leads package.
- What is the thermal resistance junction-case for the IGBT?
The thermal resistance junction-case for the IGBT is 0.65 °C/W.
- Is the STGWA40H65DFB2 RoHS compliant?
Yes, the STGWA40H65DFB2 is RoHS compliant and comes in an ECOPACK2 package).
- What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C).
- What are the key features of the co-packaged diode?
The co-packaged diode is very fast and has soft recovery characteristics, minimizing switching losses and improving overall efficiency).
- What are some typical applications for the STGWA40H65DFB2?
Typical applications include industrial power conversion, telecom and datacom, micro-inverters, and motor drives).
- What is the collector-emitter saturation voltage (VCE(sat)) at 40 A?
The collector-emitter saturation voltage (VCE(sat)) at 40 A is typically 1.55 V).
- How does the STGWA40H65DFB2 handle thermal management?
The device has low thermal resistance and a large junction area, facilitating better heat dissipation and superior performance at high frequencies).
