Overview
The FGH75T65SHDT-F155 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes novel field stop IGBT technology, specifically designed for applications requiring low conduction and switching losses. It is part of onsemi's 3rd generation field stop IGBT series, offering optimal performance for various power management applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector to Emitter Voltage | VCES | 650 | V |
| Gate to Emitter Voltage | VGES | ±20 | V |
| Transient Gate to Emitter Voltage | ±30 | V | |
| Collector Current at TC = 25°C | IC | 150 | A |
| Collector Current at TC = 100°C | IC | 75 | A |
| Pulsed Collector Current at TC = 25°C | ILM | 225 | A |
| Maximum Power Dissipation at TC = 25°C | PD | 455 | W |
| Operating Junction Temperature | TJ | -55 to +175 | °C |
| Thermal Resistance, Junction to Case (IGBT) | RθJC | 0.33 | °C/W |
| Thermal Resistance, Junction to Ambient | RθJA | 40 | °C/W |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.6 | V @ IC = 75 A |
| Turn-On Delay Time | td(on) | 28 | ns |
| Rise Time | tr | 61 | ns |
| Turn-Off Delay Time | td(off) | 86 | ns |
| Fall Time | tf | 16 | ns |
| Package Type | TO-247-3 |
Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A
- 100% of the Parts Tested for ILM
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- Rohs Compliant and Pb-Free
Applications
- Solar Inverter
- Uninterruptible Power Supply (UPS)
- Welder
- Telecom
- Energy Storage Systems (ESS)
- Power Factor Correction (PFC)
Q & A
- What is the maximum collector to emitter voltage of the FGH75T65SHDT-F155 IGBT?
The maximum collector to emitter voltage is 650 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 150 A at 25°C and 75 A at 100°C.
- What is the typical collector-emitter saturation voltage?
The typical collector-emitter saturation voltage is 1.6 V at IC = 75 A.
- What is the thermal resistance from junction to case for the IGBT?
The thermal resistance from junction to case for the IGBT is 0.33 °C/W.
- What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time is 28 ns, and the typical turn-off delay time is 86 ns.
- What is the package type of the FGH75T65SHDT-F155?
The package type is TO-247-3.
- Is the FGH75T65SHDT-F155 RoHS compliant?
- What are some common applications for the FGH75T65SHDT-F155 IGBT?
- What is the maximum power dissipation at 25°C and 100°C?
The maximum power dissipation is 455 W at 25°C and 227 W at 100°C.
