FGH75T65SHD-F155
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onsemi FGH75T65SHD-F155

Manufacturer No:
FGH75T65SHD-F155
Manufacturer:
onsemi
Package:
Bulk
Description:
IGBT TRENCH/FS 650V 150A TO247
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The FGH75T65SHD-F155 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by ON Semiconductor. This component utilizes novel field stop IGBT technology, specifically designed for applications requiring high efficiency and reliability. It is part of ON Semiconductor's 3rd generation field stop IGBT series, which offers optimum performance for various power management applications.

Key Specifications

ParameterValue
Collector to Emitter Voltage (VCES)650 V
Collector Current (IC)75 A
Gate to Emitter Voltage (VGES)±20 V
Transient Gate to Emitter Voltage±30 V
Package TypeTO-247-3

Key Features

  • High voltage and current handling capabilities, making it suitable for demanding applications.
  • Utilizes field stop IGBT technology for improved performance and efficiency.
  • Low switching losses and high switching frequency.
  • Robust and reliable design for long-term operation.
  • Compact TO-247-3 package for efficient thermal management.

Applications

  • Solar Inverters: Ideal for high-efficiency solar power conversion systems.
  • Uninterruptible Power Supplies (UPS): Ensures reliable power supply in critical applications.
  • Industrial Power Supplies: Suitable for high-power industrial equipment.
  • Motor Control: Used in high-performance motor drive systems.

Q & A

  1. What is the collector to emitter voltage rating of the FGH75T65SHD-F155?
    The collector to emitter voltage rating is 650 V.
  2. What is the maximum collector current of the FGH75T65SHD-F155?
    The maximum collector current is 75 A.
  3. What is the gate to emitter voltage range for the FGH75T65SHD-F155?
    The gate to emitter voltage range is ±20 V.
  4. What is the transient gate to emitter voltage for the FGH75T65SHD-F155?
    The transient gate to emitter voltage is ±30 V.
  5. In what package is the FGH75T65SHD-F155 available?
    The FGH75T65SHD-F155 is available in the TO-247-3 package.
  6. What are the primary applications of the FGH75T65SHD-F155?
    The primary applications include solar inverters, UPS, industrial power supplies, and motor control systems.
  7. What technology does the FGH75T65SHD-F155 use?
    The FGH75T65SHD-F155 uses novel field stop IGBT technology.
  8. Why is the FGH75T65SHD-F155 considered high-performance?
    The FGH75T65SHD-F155 is considered high-performance due to its low switching losses and high switching frequency.
  9. Is the FGH75T65SHD-F155 suitable for high-power applications?
    Yes, the FGH75T65SHD-F155 is designed for high-power applications due to its high voltage and current handling capabilities.
  10. Where can I find detailed specifications for the FGH75T65SHD-F155?
    Detailed specifications can be found in the datasheet available on ON Semiconductor's official website or through distributors like Digi-Key.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):150 A
Current - Collector Pulsed (Icm):225 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 75A
Power - Max:455 W
Switching Energy:2.4mJ (on), 720µJ (off)
Input Type:Standard
Gate Charge:123 nC
Td (on/off) @ 25°C:28ns/80ns
Test Condition:400V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr):43.4 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number FGH75T65SHD-F155 FGH75T65SQD-F155 FGH75T65SHDT-F155
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V
Current - Collector (Ic) (Max) 150 A 150 A 150 A
Current - Collector Pulsed (Icm) 225 A 300 A 225 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A - 2.1V @ 15V, 75A
Power - Max 455 W 375 W 455 W
Switching Energy 2.4mJ (on), 720µJ (off) 760µJ (on), 180µJ (off) 3mJ (on), 750µJ (off)
Input Type Standard Standard Standard
Gate Charge 123 nC 128 nC 123 nC
Td (on/off) @ 25°C 28ns/80ns - 28ns/86ns
Test Condition 400V, 75A, 3Ohm, 15V - 400V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr) 43.4 ns 43 ns 76 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3

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