Overview
The FGD5T120SH is a 1200 V, 5 A Field Stop (FS) Trench Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes novel field stop IGBT technology, offering optimal performance for various high-power applications. It is packaged in a TO-252 (D-PAK) mold, which is suitable for surface mount assembly.
The FGD5T120SH is designed to provide high speed switching, low saturation voltage, and high input impedance, making it an excellent choice for applications requiring efficient power management and reliability.
Key Specifications
| Parameter | Symbol | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | V | - | - | 1200 |
| Gate to Emitter Voltage | VGES | V | - | - | ±25 |
| Transient Gate to Emitter Voltage | - | V | - | - | ±30 |
| Collector Current @ TC = 25°C | IC | A | - | - | 10 |
| Collector Current @ TC = 100°C | IC | A | - | - | 5 |
| Clamped Inductive Load Current @ TC = 25°C | ILM | A | - | - | 12.5 |
| Pulsed Collector Current | ICM | A | - | - | 12.5 |
| Maximum Power Dissipation @ TC = 25°C | PD | W | - | - | 69 |
| Maximum Power Dissipation @ TC = 100°C | PD | W | - | - | 28 |
| Operating Junction Temperature | TJ | °C | -55 | - | 150 |
| Storage Temperature Range | Tstg | °C | -55 | - | 150 |
| Maximum Lead Temperature for Soldering | TL | °C | - | - | 300 |
| Thermal Resistance, Junction to Case | RθJC | °C/W | - | - | 1.8 |
| Thermal Resistance, Junction to Ambient | RθJA | °C/W | - | - | 50 |
| Gate to Emitter Threshold Voltage | VGE(th) | V | 2.5 | 3.5 | 4.5 |
| Collector to Emitter Saturation Voltage @ IC = 5 A, VGE = 15 V | VCE(sat) | V | - | 2.9 | 3.6 |
| Turn-On Delay Time @ VCC = 600 V, IC = 5 A, RG = 30 Ω, VGE = 15 V | Td(on) | ns | - | 4.8 | - |
| Turn-Off Delay Time @ VCC = 600 V, IC = 5 A, RG = 30 Ω, VGE = 15 V | Td(off) | ns | - | 24.8 | - |
Key Features
- FS Trench Technology: Utilizes field stop trench technology for improved performance.
- High Speed Switching: Offers fast switching times, making it suitable for high-frequency applications.
- Low Saturation Voltage: VCE(sat) = 2.9 V @ IC = 5 A, ensuring low power losses.
- High Input Impedance: Reduces the need for external gate resistors.
- RoHS Compliant: Meets the requirements of the Restriction of Hazardous Substances directive.
- Positive Temperature Coefficient: Ensures stable operation over a wide temperature range.
Applications
- Inrush Current Limitation: Ideal for applications requiring controlled inrush current.
- Lighting: Suitable for lighting systems that demand high efficiency and reliability.
- Home Appliances: Used in various home appliances that require robust and efficient power management.
Q & A
- What is the maximum collector to emitter voltage of the FGD5T120SH IGBT?
The maximum collector to emitter voltage (VCES) is 1200 V.
- What is the typical collector to emitter saturation voltage at IC = 5 A and VGE = 15 V?
The typical collector to emitter saturation voltage (VCE(sat)) is 2.9 V.
- What is the thermal resistance from junction to case (RθJC) for the FGD5T120SH?
The thermal resistance from junction to case (RθJC) is 1.8 °C/W.
- Is the FGD5T120SH RoHS compliant?
Yes, the FGD5T120SH is RoHS compliant.
- What are the typical turn-on and turn-off delay times for the FGD5T120SH?
The typical turn-on delay time (Td(on)) is 4.8 ns, and the typical turn-off delay time (Td(off)) is 24.8 ns.
- What is the maximum operating junction temperature for the FGD5T120SH?
The maximum operating junction temperature (TJ) is 150 °C.
- What is the package type of the FGD5T120SH IGBT?
The FGD5T120SH is packaged in a TO-252 (D-PAK) mold.
- What are some common applications of the FGD5T120SH IGBT?
Common applications include inrush current limitation, lighting, and home appliances.
- What is the maximum collector current at TC = 25°C and TC = 100°C?
The maximum collector current at TC = 25°C is 10 A, and at TC = 100°C is 5 A.
- What is the clamped inductive load current (ILM) for the FGD5T120SH?
The clamped inductive load current (ILM) is 12.5 A.
