TIG065E8-TL-H
  • Share:

onsemi TIG065E8-TL-H

Manufacturer No:
TIG065E8-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGBT 400V 150A ECH8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIG065E8-TL-H is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. This component is designed to offer high efficiency and reliability in various power management and control applications. With its robust specifications and features, it is well-suited for use in industrial, automotive, and consumer electronics.

Key Specifications

ParameterValue
Mounting StyleSMD/SMT
ConfigurationSingle
Collector-Emitter Voltage (VCEO) Max400 V
Collector-Emitter Saturation Voltage4.2 V
Continuous Collector Current (IC)150 A
PackagingECH8

Key Features

  • High collector-emitter voltage rating of 400 V, making it suitable for high-voltage applications.
  • High continuous collector current of 150 A, ensuring robust performance in demanding environments.
  • Low collector-emitter saturation voltage of 4.2 V, which helps in reducing power losses.
  • Pb-free and halogen-free, complying with environmental regulations.
  • SMD/SMT mounting style for easy integration into modern PCB designs.

Applications

The TIG065E8-TL-H IGBT is versatile and can be used in a variety of applications, including:

  • Industrial power supplies and motor drives.
  • Automotive systems such as electric vehicle charging and power management.
  • Consumer electronics requiring high-power switching and control.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum collector-emitter voltage of the TIG065E8-TL-H?
    The maximum collector-emitter voltage is 400 V.
  2. What is the continuous collector current rating of this IGBT?
    The continuous collector current rating is 150 A.
  3. What is the collector-emitter saturation voltage of the TIG065E8-TL-H?
    The collector-emitter saturation voltage is 4.2 V.
  4. Is the TIG065E8-TL-H Pb-free and halogen-free?
    Yes, it is Pb-free and halogen-free.
  5. What is the mounting style of the TIG065E8-TL-H?
    The mounting style is SMD/SMT.
  6. In what types of applications is the TIG065E8-TL-H commonly used?
    It is commonly used in industrial power supplies, automotive systems, consumer electronics, and renewable energy systems.
  7. What is the packaging type of the TIG065E8-TL-H?
    The packaging type is ECH8.
  8. Where can I find detailed specifications for the TIG065E8-TL-H?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  9. Is the TIG065E8-TL-H suitable for high-power switching applications?
    Yes, it is designed for high-power switching and control applications.
  10. Can the TIG065E8-TL-H be used in automotive systems?
    Yes, it can be used in automotive systems due to its robust specifications and reliability.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):400 V
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:7V @ 2.5V, 100A
Power - Max:- 
Switching Energy:- 
Input Type:Standard
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:8-ECH
0 Remaining View Similar

In Stock

$0.81
799

Please send RFQ , we will respond immediately.

Similar Products

Part Number TIG065E8-TL-H TIG062E8-TL-H TIG064E8-TL-H
Manufacturer onsemi onsemi Sanyo
Product Status Obsolete Obsolete Active
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V
Current - Collector (Ic) (Max) - - -
Current - Collector Pulsed (Icm) 150 A 150 A 150 A
Vce(on) (Max) @ Vge, Ic 7V @ 2.5V, 100A 8V @ 3V, 100A 7V @ 2.5V, 100A
Power - Max - - -
Switching Energy - - -
Input Type Standard Standard Standard
Gate Charge - - -
Td (on/off) @ 25°C - - -
Test Condition - - -
Reverse Recovery Time (trr) - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package 8-ECH 8-ECH 8-ECH

Related Product By Categories

STGP10NC60KD
STGP10NC60KD
STMicroelectronics
IGBT 600V 20A 65W TO220
FGH60N60SMD
FGH60N60SMD
onsemi
IGBT FIELD STOP 600V 120A TO247
HGTG30N60A4D
HGTG30N60A4D
onsemi
IGBT 600V 75A 463W TO247
SGL160N60UFDTU
SGL160N60UFDTU
onsemi
IGBT 600V 160A 250W TO264
HGT1S10N120BNST
HGT1S10N120BNST
onsemi
IGBT 1200V 35A 298W TO263AB
STGF7H60DF
STGF7H60DF
STMicroelectronics
IGBT 600V 14A 24W TO-220FP
STGP8NC60KD
STGP8NC60KD
STMicroelectronics
IGBT 600V 15A 65W TO220
AFGY160T65SPD-B4
AFGY160T65SPD-B4
onsemi
IGBT - 650V, 160A FIELD STOP TRE
FGH40N60SFDTU-F085
FGH40N60SFDTU-F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
FGH40T120SMDL4
FGH40T120SMDL4
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
STGB20NC60VT4
STGB20NC60VT4
STMicroelectronics
IGBT 600V 60A 200W D2PAK
STGWA80H65DFB
STGWA80H65DFB
STMicroelectronics
IGBT BIPO 650V 80A TO247-3

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE