TIG065E8-TL-H
  • Share:

onsemi TIG065E8-TL-H

Manufacturer No:
TIG065E8-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGBT 400V 150A ECH8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIG065E8-TL-H is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. This component is designed to offer high efficiency and reliability in various power management and control applications. With its robust specifications and features, it is well-suited for use in industrial, automotive, and consumer electronics.

Key Specifications

ParameterValue
Mounting StyleSMD/SMT
ConfigurationSingle
Collector-Emitter Voltage (VCEO) Max400 V
Collector-Emitter Saturation Voltage4.2 V
Continuous Collector Current (IC)150 A
PackagingECH8

Key Features

  • High collector-emitter voltage rating of 400 V, making it suitable for high-voltage applications.
  • High continuous collector current of 150 A, ensuring robust performance in demanding environments.
  • Low collector-emitter saturation voltage of 4.2 V, which helps in reducing power losses.
  • Pb-free and halogen-free, complying with environmental regulations.
  • SMD/SMT mounting style for easy integration into modern PCB designs.

Applications

The TIG065E8-TL-H IGBT is versatile and can be used in a variety of applications, including:

  • Industrial power supplies and motor drives.
  • Automotive systems such as electric vehicle charging and power management.
  • Consumer electronics requiring high-power switching and control.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum collector-emitter voltage of the TIG065E8-TL-H?
    The maximum collector-emitter voltage is 400 V.
  2. What is the continuous collector current rating of this IGBT?
    The continuous collector current rating is 150 A.
  3. What is the collector-emitter saturation voltage of the TIG065E8-TL-H?
    The collector-emitter saturation voltage is 4.2 V.
  4. Is the TIG065E8-TL-H Pb-free and halogen-free?
    Yes, it is Pb-free and halogen-free.
  5. What is the mounting style of the TIG065E8-TL-H?
    The mounting style is SMD/SMT.
  6. In what types of applications is the TIG065E8-TL-H commonly used?
    It is commonly used in industrial power supplies, automotive systems, consumer electronics, and renewable energy systems.
  7. What is the packaging type of the TIG065E8-TL-H?
    The packaging type is ECH8.
  8. Where can I find detailed specifications for the TIG065E8-TL-H?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  9. Is the TIG065E8-TL-H suitable for high-power switching applications?
    Yes, it is designed for high-power switching and control applications.
  10. Can the TIG065E8-TL-H be used in automotive systems?
    Yes, it can be used in automotive systems due to its robust specifications and reliability.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):400 V
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:7V @ 2.5V, 100A
Power - Max:- 
Switching Energy:- 
Input Type:Standard
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:8-ECH
0 Remaining View Similar

In Stock

$0.81
799

Please send RFQ , we will respond immediately.

Similar Products

Part Number TIG065E8-TL-H TIG062E8-TL-H TIG064E8-TL-H
Manufacturer onsemi onsemi Sanyo
Product Status Obsolete Obsolete Active
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V
Current - Collector (Ic) (Max) - - -
Current - Collector Pulsed (Icm) 150 A 150 A 150 A
Vce(on) (Max) @ Vge, Ic 7V @ 2.5V, 100A 8V @ 3V, 100A 7V @ 2.5V, 100A
Power - Max - - -
Switching Energy - - -
Input Type Standard Standard Standard
Gate Charge - - -
Td (on/off) @ 25°C - - -
Test Condition - - -
Reverse Recovery Time (trr) - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package 8-ECH 8-ECH 8-ECH

Related Product By Categories

NGD8205ANT4G
NGD8205ANT4G
onsemi
INSULATED GATE BIPOLAR TRANSISTO
STGD10HF60KD
STGD10HF60KD
STMicroelectronics
IGBT 600V 10A DPAK
FGH40N60UFDTU
FGH40N60UFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
STGD4M65DF2
STGD4M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
STGWT40H65DFB
STGWT40H65DFB
STMicroelectronics
IGBT 650V 80A 283W TO3P-3L
FGH40N60SMD-F085
FGH40N60SMD-F085
onsemi
IGBT 600V 80A 349W TO-247-3
STGWA40M120DF3
STGWA40M120DF3
STMicroelectronics
IGBT 1200V 80A 468W TO-247-3
NGTB35N65FL2WG
NGTB35N65FL2WG
onsemi
IGBT TRENCH/FS 650V 70A TO247
STGYA120M65DF2AG
STGYA120M65DF2AG
STMicroelectronics
IGBT
FGHL75T65MQDTL4
FGHL75T65MQDTL4
onsemi
FS4 MID SPEED IGBT 650V 75A TO24
STGB20NC60VT4
STGB20NC60VT4
STMicroelectronics
IGBT 600V 60A 200W D2PAK
STGP20H60DF
STGP20H60DF
STMicroelectronics
IGBT 600V 40A 167W TO220

Related Product By Brand

MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC