TIG065E8-TL-H
  • Share:

onsemi TIG065E8-TL-H

Manufacturer No:
TIG065E8-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGBT 400V 150A ECH8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIG065E8-TL-H is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. This component is designed to offer high efficiency and reliability in various power management and control applications. With its robust specifications and features, it is well-suited for use in industrial, automotive, and consumer electronics.

Key Specifications

ParameterValue
Mounting StyleSMD/SMT
ConfigurationSingle
Collector-Emitter Voltage (VCEO) Max400 V
Collector-Emitter Saturation Voltage4.2 V
Continuous Collector Current (IC)150 A
PackagingECH8

Key Features

  • High collector-emitter voltage rating of 400 V, making it suitable for high-voltage applications.
  • High continuous collector current of 150 A, ensuring robust performance in demanding environments.
  • Low collector-emitter saturation voltage of 4.2 V, which helps in reducing power losses.
  • Pb-free and halogen-free, complying with environmental regulations.
  • SMD/SMT mounting style for easy integration into modern PCB designs.

Applications

The TIG065E8-TL-H IGBT is versatile and can be used in a variety of applications, including:

  • Industrial power supplies and motor drives.
  • Automotive systems such as electric vehicle charging and power management.
  • Consumer electronics requiring high-power switching and control.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum collector-emitter voltage of the TIG065E8-TL-H?
    The maximum collector-emitter voltage is 400 V.
  2. What is the continuous collector current rating of this IGBT?
    The continuous collector current rating is 150 A.
  3. What is the collector-emitter saturation voltage of the TIG065E8-TL-H?
    The collector-emitter saturation voltage is 4.2 V.
  4. Is the TIG065E8-TL-H Pb-free and halogen-free?
    Yes, it is Pb-free and halogen-free.
  5. What is the mounting style of the TIG065E8-TL-H?
    The mounting style is SMD/SMT.
  6. In what types of applications is the TIG065E8-TL-H commonly used?
    It is commonly used in industrial power supplies, automotive systems, consumer electronics, and renewable energy systems.
  7. What is the packaging type of the TIG065E8-TL-H?
    The packaging type is ECH8.
  8. Where can I find detailed specifications for the TIG065E8-TL-H?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  9. Is the TIG065E8-TL-H suitable for high-power switching applications?
    Yes, it is designed for high-power switching and control applications.
  10. Can the TIG065E8-TL-H be used in automotive systems?
    Yes, it can be used in automotive systems due to its robust specifications and reliability.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):400 V
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:7V @ 2.5V, 100A
Power - Max:- 
Switching Energy:- 
Input Type:Standard
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:8-ECH
0 Remaining View Similar

In Stock

$0.81
799

Please send RFQ , we will respond immediately.

Similar Products

Part Number TIG065E8-TL-H TIG062E8-TL-H TIG064E8-TL-H
Manufacturer onsemi onsemi Sanyo
Product Status Obsolete Obsolete Active
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V
Current - Collector (Ic) (Max) - - -
Current - Collector Pulsed (Icm) 150 A 150 A 150 A
Vce(on) (Max) @ Vge, Ic 7V @ 2.5V, 100A 8V @ 3V, 100A 7V @ 2.5V, 100A
Power - Max - - -
Switching Energy - - -
Input Type Standard Standard Standard
Gate Charge - - -
Td (on/off) @ 25°C - - -
Test Condition - - -
Reverse Recovery Time (trr) - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package 8-ECH 8-ECH 8-ECH

Related Product By Categories

FGH80N60FD2TU
FGH80N60FD2TU
onsemi
IGBT 600V 80A 290W TO247
FGB3245G2-F085
FGB3245G2-F085
onsemi
ECOSPARK2 450V IGNITION IGBT
STGD7NC60HT4
STGD7NC60HT4
STMicroelectronics
IGBT 600V 25A 70W DPAK
FGA50T65SHD
FGA50T65SHD
onsemi
IGBT TRENCH/FS 650V 100A TO3PN
IKW50N60TFKSA1
IKW50N60TFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
STGYA120M65DF2
STGYA120M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
FGD3040G2-F085C
FGD3040G2-F085C
onsemi
ECOSPARK2 IGN-IGBT TO252
NGTB50N65FL2WG
NGTB50N65FL2WG
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
FGD3245G2-F085C
FGD3245G2-F085C
onsemi
ECOSPARK2 IGN-IGBT TO252
FGD3245G2-F085V
FGD3245G2-F085V
onsemi
IGBT 450V DPAK
STGWA25H120DF2
STGWA25H120DF2
STMicroelectronics
IGBT HB 1200V 25A HS TO247-3
STGW45HF60WDI
STGW45HF60WDI
STMicroelectronics
IGBT 600V 70A 250W TO247

Related Product By Brand

NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5