TIG065E8-TL-H
  • Share:

onsemi TIG065E8-TL-H

Manufacturer No:
TIG065E8-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGBT 400V 150A ECH8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIG065E8-TL-H is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. This component is designed to offer high efficiency and reliability in various power management and control applications. With its robust specifications and features, it is well-suited for use in industrial, automotive, and consumer electronics.

Key Specifications

ParameterValue
Mounting StyleSMD/SMT
ConfigurationSingle
Collector-Emitter Voltage (VCEO) Max400 V
Collector-Emitter Saturation Voltage4.2 V
Continuous Collector Current (IC)150 A
PackagingECH8

Key Features

  • High collector-emitter voltage rating of 400 V, making it suitable for high-voltage applications.
  • High continuous collector current of 150 A, ensuring robust performance in demanding environments.
  • Low collector-emitter saturation voltage of 4.2 V, which helps in reducing power losses.
  • Pb-free and halogen-free, complying with environmental regulations.
  • SMD/SMT mounting style for easy integration into modern PCB designs.

Applications

The TIG065E8-TL-H IGBT is versatile and can be used in a variety of applications, including:

  • Industrial power supplies and motor drives.
  • Automotive systems such as electric vehicle charging and power management.
  • Consumer electronics requiring high-power switching and control.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum collector-emitter voltage of the TIG065E8-TL-H?
    The maximum collector-emitter voltage is 400 V.
  2. What is the continuous collector current rating of this IGBT?
    The continuous collector current rating is 150 A.
  3. What is the collector-emitter saturation voltage of the TIG065E8-TL-H?
    The collector-emitter saturation voltage is 4.2 V.
  4. Is the TIG065E8-TL-H Pb-free and halogen-free?
    Yes, it is Pb-free and halogen-free.
  5. What is the mounting style of the TIG065E8-TL-H?
    The mounting style is SMD/SMT.
  6. In what types of applications is the TIG065E8-TL-H commonly used?
    It is commonly used in industrial power supplies, automotive systems, consumer electronics, and renewable energy systems.
  7. What is the packaging type of the TIG065E8-TL-H?
    The packaging type is ECH8.
  8. Where can I find detailed specifications for the TIG065E8-TL-H?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  9. Is the TIG065E8-TL-H suitable for high-power switching applications?
    Yes, it is designed for high-power switching and control applications.
  10. Can the TIG065E8-TL-H be used in automotive systems?
    Yes, it can be used in automotive systems due to its robust specifications and reliability.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):400 V
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:7V @ 2.5V, 100A
Power - Max:- 
Switching Energy:- 
Input Type:Standard
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:8-ECH
0 Remaining View Similar

In Stock

$0.81
799

Please send RFQ , we will respond immediately.

Similar Products

Part Number TIG065E8-TL-H TIG062E8-TL-H TIG064E8-TL-H
Manufacturer onsemi onsemi Sanyo
Product Status Obsolete Obsolete Active
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V
Current - Collector (Ic) (Max) - - -
Current - Collector Pulsed (Icm) 150 A 150 A 150 A
Vce(on) (Max) @ Vge, Ic 7V @ 2.5V, 100A 8V @ 3V, 100A 7V @ 2.5V, 100A
Power - Max - - -
Switching Energy - - -
Input Type Standard Standard Standard
Gate Charge - - -
Td (on/off) @ 25°C - - -
Test Condition - - -
Reverse Recovery Time (trr) - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package 8-ECH 8-ECH 8-ECH

Related Product By Categories

NGD8205ANT4G
NGD8205ANT4G
onsemi
INSULATED GATE BIPOLAR TRANSISTO
STGF10NB60SD
STGF10NB60SD
STMicroelectronics
IGBT 600V 23A 25W TO220FP
STGD19N40LZ
STGD19N40LZ
STMicroelectronics
IGBT 20V 40A DPAK
STGP7NC60HD
STGP7NC60HD
STMicroelectronics
IGBT 600V 25A 80W TO220
HGTG30N60A4D
HGTG30N60A4D
onsemi
IGBT 600V 75A 463W TO247
STGB10H60DF
STGB10H60DF
STMicroelectronics
IGBT 600V 20A 115W D2PAK
STGP8NC60KD
STGP8NC60KD
STMicroelectronics
IGBT 600V 15A 65W TO220
FGH15T120SMD-F155
FGH15T120SMD-F155
onsemi
IGBT 1200V 30A 333W TO247-3
STGD18N40LZT4
STGD18N40LZT4
STMicroelectronics
IGBT 420V 25A 125W DPAK
STGB10M65DF2
STGB10M65DF2
STMicroelectronics
IGBT 650V 10A D2PAK
STGWT28IH125DF
STGWT28IH125DF
STMicroelectronics
IGBT 1250V 60A 375W TO-3P
FGD3040G2_F085
FGD3040G2_F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO

Related Product By Brand

MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F