TIG065E8-TL-H
  • Share:

onsemi TIG065E8-TL-H

Manufacturer No:
TIG065E8-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGBT 400V 150A ECH8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIG065E8-TL-H is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. This component is designed to offer high efficiency and reliability in various power management and control applications. With its robust specifications and features, it is well-suited for use in industrial, automotive, and consumer electronics.

Key Specifications

ParameterValue
Mounting StyleSMD/SMT
ConfigurationSingle
Collector-Emitter Voltage (VCEO) Max400 V
Collector-Emitter Saturation Voltage4.2 V
Continuous Collector Current (IC)150 A
PackagingECH8

Key Features

  • High collector-emitter voltage rating of 400 V, making it suitable for high-voltage applications.
  • High continuous collector current of 150 A, ensuring robust performance in demanding environments.
  • Low collector-emitter saturation voltage of 4.2 V, which helps in reducing power losses.
  • Pb-free and halogen-free, complying with environmental regulations.
  • SMD/SMT mounting style for easy integration into modern PCB designs.

Applications

The TIG065E8-TL-H IGBT is versatile and can be used in a variety of applications, including:

  • Industrial power supplies and motor drives.
  • Automotive systems such as electric vehicle charging and power management.
  • Consumer electronics requiring high-power switching and control.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum collector-emitter voltage of the TIG065E8-TL-H?
    The maximum collector-emitter voltage is 400 V.
  2. What is the continuous collector current rating of this IGBT?
    The continuous collector current rating is 150 A.
  3. What is the collector-emitter saturation voltage of the TIG065E8-TL-H?
    The collector-emitter saturation voltage is 4.2 V.
  4. Is the TIG065E8-TL-H Pb-free and halogen-free?
    Yes, it is Pb-free and halogen-free.
  5. What is the mounting style of the TIG065E8-TL-H?
    The mounting style is SMD/SMT.
  6. In what types of applications is the TIG065E8-TL-H commonly used?
    It is commonly used in industrial power supplies, automotive systems, consumer electronics, and renewable energy systems.
  7. What is the packaging type of the TIG065E8-TL-H?
    The packaging type is ECH8.
  8. Where can I find detailed specifications for the TIG065E8-TL-H?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  9. Is the TIG065E8-TL-H suitable for high-power switching applications?
    Yes, it is designed for high-power switching and control applications.
  10. Can the TIG065E8-TL-H be used in automotive systems?
    Yes, it can be used in automotive systems due to its robust specifications and reliability.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):400 V
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:7V @ 2.5V, 100A
Power - Max:- 
Switching Energy:- 
Input Type:Standard
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:8-ECH
0 Remaining View Similar

In Stock

$0.81
799

Please send RFQ , we will respond immediately.

Similar Products

Part Number TIG065E8-TL-H TIG062E8-TL-H TIG064E8-TL-H
Manufacturer onsemi onsemi Sanyo
Product Status Obsolete Obsolete Active
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V
Current - Collector (Ic) (Max) - - -
Current - Collector Pulsed (Icm) 150 A 150 A 150 A
Vce(on) (Max) @ Vge, Ic 7V @ 2.5V, 100A 8V @ 3V, 100A 7V @ 2.5V, 100A
Power - Max - - -
Switching Energy - - -
Input Type Standard Standard Standard
Gate Charge - - -
Td (on/off) @ 25°C - - -
Test Condition - - -
Reverse Recovery Time (trr) - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package 8-ECH 8-ECH 8-ECH

Related Product By Categories

SGB8206ANTF4G
SGB8206ANTF4G
onsemi
IGBT 20A, 350V, N-CHANNEL
STGD5H60DF
STGD5H60DF
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, H S
STGW30NC60WD
STGW30NC60WD
STMicroelectronics
IGBT 600V 60A 200W TO247
NGTB15N120FL2WG
NGTB15N120FL2WG
onsemi
IGBT 1200V 15A SOLAR/UPS TO247
FGH75T65SQDNL4
FGH75T65SQDNL4
onsemi
650V/75 FAST IGBT FSIII T
STGD6M65DF2
STGD6M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
STGWA40H65DFB
STGWA40H65DFB
STMicroelectronics
IGBT TRENCH 650V 80A TO247
STGWA50M65DF2
STGWA50M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
STGWA75H65DFB2
STGWA75H65DFB2
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 7
STGB30H60DFB
STGB30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
FGA6560WDF
FGA6560WDF
onsemi
IGBT TRENCH/FS 650V 120A TO3PN
STGWT80H65DFB
STGWT80H65DFB
STMicroelectronics
IGBT 650V 120A 469W TO3P-3L

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN