Overview
The HGTG30N60A4D is a MOS gated high voltage switching device produced by onsemi. This device combines the best features of MOSFETs and bipolar transistors, offering high input impedance and low on-state conduction loss. It is designed for high frequency switch mode power supplies and other high voltage switching applications where low conduction losses are essential.
Key Specifications
| Parameter | Unit | Max | Typ | Min | Test Condition |
|---|---|---|---|---|---|
| Collector to Emitter Voltage (VCE) | V | 600 | |||
| Collector Current (ICE) | A | 30 | |||
| Gate to Emitter Voltage (VGE) | V | 20 | -20 | ||
| Turn-Off Energy (EOFF) | mJ | 750 | 450 | ICE = 30 A, VCE = 390 V | |
| Diode Forward Voltage (VEC) | V | 2.5 | 2.2 | IEC = 30 A | |
| Diode Reverse Recovery Time (trr) | ns | 55 | 40 | IEC = 30 A, dIEC/dt = 200 A/μs | |
| Thermal Resistance Junction to Case (RJC) | °C/W | 0.27 | IGBT | ||
| Thermal Resistance Junction to Case (RJC) | °C/W | 0.65 | Diode |
Key Features
- Combines the best features of MOSFETs and bipolar transistors.
- High input impedance and low on-state conduction loss.
- Optimized for high frequency switch mode power supplies.
- Operation up to 100 kHz.
- Low on-state voltage drop with minimal variation between 25°C and 150°C.
- Includes an anti-parallel hyperfast diode.
Applications
The HGTG30N60A4D is ideal for various high voltage switching applications, particularly those operating at high frequencies. Some key applications include:
- High frequency switch mode power supplies.
- Motor control and drive systems.
- Power factor correction (PFC) circuits.
- Uninterruptible power supplies (UPS).
- Renewable energy systems such as solar and wind power inverters.
Q & A
- What is the HGTG30N60A4D?
The HGTG30N60A4D is a MOS gated high voltage switching device that combines the features of MOSFETs and bipolar transistors. - What are the key benefits of the HGTG30N60A4D?
It offers high input impedance, low on-state conduction loss, and is optimized for high frequency switch mode power supplies. - What is the maximum collector to emitter voltage (VCE) of the HGTG30N60A4D?
The maximum VCE is 600 V. - What is the maximum collector current (ICE) of the HGTG30N60A4D?
The maximum ICE is 30 A. - What is the typical turn-off energy (EOFF) of the HGTG30N60A4D?
The typical EOFF is 450 mJ at ICE = 30 A and VCE = 390 V. - What is the diode forward voltage (VEC) of the HGTG30N60A4D?
The diode forward voltage is typically 2.2 V at IEC = 30 A. - What is the thermal resistance junction to case (RJC) for the IGBT and diode?
The RJC for the IGBT is 0.27 °C/W, and for the diode, it is 0.65 °C/W. - In what types of applications is the HGTG30N60A4D commonly used?
It is commonly used in high frequency switch mode power supplies, motor control and drive systems, power factor correction (PFC) circuits, uninterruptible power supplies (UPS), and renewable energy systems. - What is the operating frequency range of the HGTG30N60A4D?
The device can operate up to 100 kHz. - Does the HGTG30N60A4D include an anti-parallel diode?
Yes, it includes an anti-parallel hyperfast diode.
