Overview
The STGWT40H65DFB is an Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using an advanced proprietary trench gate field-stop structure. This device is part of the new HB series of IGBTs, which offers an optimum balance between conduction and switching losses to maximize the efficiency of high-frequency converters. The STGWT40H65DFB is designed to operate at high speeds with minimized tail current and very low saturation voltage, making it suitable for various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VGE = 0) | 650 | V |
| Continuous collector current at TC = 25 °C | 80 | A |
| Continuous collector current at TC = 100 °C | 40 | A |
| Pulsed collector current | 160 | A |
| Gate-emitter voltage | ±20 | V |
| Maximum junction temperature | 175 | °C |
| Thermal resistance junction-case IGBT | 0.53 | °C/W |
| Thermal resistance junction-ambient | 50 | °C/W |
| Collector-emitter saturation voltage (VGE = 15 V, IC = 40 A) | 1.60 | V |
| Turn-on delay time (VCE = 400 V, IC = 40 A, RG = 5 Ω, VGE = 15 V) | 40 | ns |
| Turn-off delay time (VCE = 400 V, IC = 40 A, RG = 5 Ω, VGE = 15 V) | 142 | ns |
Key Features
- High speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
- Tight parameter distribution
- Safe paralleling due to slightly positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Lead-free package
Applications
- Photovoltaic inverters
- High frequency converters
Q & A
- What is the maximum junction temperature of the STGWT40H65DFB IGBT?
The maximum junction temperature is 175 °C.
- What is the collector-emitter voltage rating of the STGWT40H65DFB?
The collector-emitter voltage rating is 650 V.
- What is the continuous collector current at 25 °C for the STGWT40H65DFB?
The continuous collector current at 25 °C is 80 A.
- What is the typical collector-emitter saturation voltage of the STGWT40H65DFB?
The typical collector-emitter saturation voltage is 1.6 V at IC = 40 A.
- What are the key features of the STGWT40H65DFB IGBT?
The key features include high speed switching, minimized tail current, low saturation voltage, tight parameter distribution, safe paralleling, low thermal resistance, and a very fast soft recovery antiparallel diode.
- What are the typical applications of the STGWT40H65DFB IGBT?
The typical applications include photovoltaic inverters and high frequency converters.
- What is the thermal resistance junction-case for the IGBT part of the STGWT40H65DFB?
The thermal resistance junction-case for the IGBT is 0.53 °C/W.
- What is the turn-on delay time for the STGWT40H65DFB under specified conditions?
The turn-on delay time is 40 ns under conditions VCE = 400 V, IC = 40 A, RG = 5 Ω, VGE = 15 V.
- Is the STGWT40H65DFB package lead-free?
Yes, the package is lead-free.
- What is the storage temperature range for the STGWT40H65DFB?
The storage temperature range is -55 to 150 °C.
