STGWT40H65DFB
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STMicroelectronics STGWT40H65DFB

Manufacturer No:
STGWT40H65DFB
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 650V 80A 283W TO3P-3L
Delivery:
Payment:
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Product Introduction

Overview

The STGWT40H65DFB is an Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using an advanced proprietary trench gate field-stop structure. This device is part of the new HB series of IGBTs, which offers an optimum balance between conduction and switching losses to maximize the efficiency of high-frequency converters. The STGWT40H65DFB is designed to operate at high speeds with minimized tail current and very low saturation voltage, making it suitable for various high-power applications.

Key Specifications

Parameter Value Unit
Collector-emitter voltage (VGE = 0) 650 V
Continuous collector current at TC = 25 °C 80 A
Continuous collector current at TC = 100 °C 40 A
Pulsed collector current 160 A
Gate-emitter voltage ±20 V
Maximum junction temperature 175 °C
Thermal resistance junction-case IGBT 0.53 °C/W
Thermal resistance junction-ambient 50 °C/W
Collector-emitter saturation voltage (VGE = 15 V, IC = 40 A) 1.60 V
Turn-on delay time (VCE = 400 V, IC = 40 A, RG = 5 Ω, VGE = 15 V) 40 ns
Turn-off delay time (VCE = 400 V, IC = 40 A, RG = 5 Ω, VGE = 15 V) 142 ns

Key Features

  • High speed switching series
  • Minimized tail current
  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
  • Tight parameter distribution
  • Safe paralleling due to slightly positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
  • Lead-free package

Applications

  • Photovoltaic inverters
  • High frequency converters

Q & A

  1. What is the maximum junction temperature of the STGWT40H65DFB IGBT?

    The maximum junction temperature is 175 °C.

  2. What is the collector-emitter voltage rating of the STGWT40H65DFB?

    The collector-emitter voltage rating is 650 V.

  3. What is the continuous collector current at 25 °C for the STGWT40H65DFB?

    The continuous collector current at 25 °C is 80 A.

  4. What is the typical collector-emitter saturation voltage of the STGWT40H65DFB?

    The typical collector-emitter saturation voltage is 1.6 V at IC = 40 A.

  5. What are the key features of the STGWT40H65DFB IGBT?

    The key features include high speed switching, minimized tail current, low saturation voltage, tight parameter distribution, safe paralleling, low thermal resistance, and a very fast soft recovery antiparallel diode.

  6. What are the typical applications of the STGWT40H65DFB IGBT?

    The typical applications include photovoltaic inverters and high frequency converters.

  7. What is the thermal resistance junction-case for the IGBT part of the STGWT40H65DFB?

    The thermal resistance junction-case for the IGBT is 0.53 °C/W.

  8. What is the turn-on delay time for the STGWT40H65DFB under specified conditions?

    The turn-on delay time is 40 ns under conditions VCE = 400 V, IC = 40 A, RG = 5 Ω, VGE = 15 V.

  9. Is the STGWT40H65DFB package lead-free?

    Yes, the package is lead-free.

  10. What is the storage temperature range for the STGWT40H65DFB?

    The storage temperature range is -55 to 150 °C.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):160 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 40A
Power - Max:283 W
Switching Energy:498µJ (on), 363µJ (off)
Input Type:Standard
Gate Charge:210 nC
Td (on/off) @ 25°C:40ns/142ns
Test Condition:400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr):62 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P
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Same Series
STGWT40H65DFB
STGWT40H65DFB
IGBT 650V 80A 283W TO3P-3L
STGW40H65DFB
STGW40H65DFB
IGBT 650V 80A 283W TO-247

Similar Products

Part Number STGWT40H65DFB STGWT40H65FB STGWT60H65DFB STGWT80H65DFB STGWA40H65DFB
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V 650 V 650 V
Current - Collector (Ic) (Max) 80 A 80 A 80 A 120 A 80 A
Current - Collector Pulsed (Icm) 160 A 160 A 240 A 240 A 160 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A 2.3V @ 15V, 40A 2V @ 15V, 60A 2V @ 15V, 80A 2V @ 15V, 40A
Power - Max 283 W 283 W 375 W 469 W 283 W
Switching Energy 498µJ (on), 363µJ (off) 498mJ (on), 363mJ (off) 1.09mJ (on), 626µJ (off) 2.1mJ (on), 1.5mJ (off) 498µJ (on), 363µJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 210 nC 210 nC 306 nC 414 nC 210 nC
Td (on/off) @ 25°C 40ns/142ns 40ns/142ns 51ns/160ns 84ns/280ns 40ns/142ns
Test Condition 400V, 40A, 5Ohm, 15V 400V, 40A, 5Ohm, 15V 400V, 60A, 5Ohm, 15V 400V, 80A, 10Ohm, 15V 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) 62 ns - 60 ns 85 ns 62 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-247-3
Supplier Device Package TO-3P TO-3P TO-3P TO-3P TO-247 Long Leads

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