Overview
The STGWT60H65DFB is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component is designed for high-speed switching applications and features a robust set of specifications that make it suitable for a variety of power electronics systems. The IGBT includes an anti-parallel diode, enhancing its functionality and efficiency in power management.
Key Specifications
| Parameter | Value |
|---|---|
| Maximum Collector-Emitter Voltage (Vce) | 650 V |
| Maximum Collector Current (Ic) | 60 A @ 25°C |
| Maximum Gate-Emitter Voltage (Vge) | 20 V |
| Collector-Emitter Saturation Voltage (VCEsat) | 1.75 V @ 25°C |
| Gate-Emitter Threshold Voltage (VGEth) | 7 V |
| Maximum Junction Temperature (Tj) | 175 °C |
| Maximum Power Dissipation (Pc) | 375 W |
| Rise Time (tr) | 38 ns (typ.) |
| Output Capacitance (Coes) | 262 pF (typ.) |
| Total Gate Charge (Qg) | 306 nC (typ.) |
| Package | TO247 |
Key Features
- High-speed switching capability with minimized tail current.
- Low saturation voltage (VCE(sat) = 1.75 V @ 25°C) for reduced power losses.
- Included anti-parallel diode for enhanced functionality.
- High maximum collector current (60 A @ 25°C) and maximum collector-emitter voltage (650 V).
- Wide operating temperature range (-55°C to +175°C @ Tj).
- Compact TO247 package.
Applications
The STGWT60H65DFB IGBT is suitable for various high-power applications, including:
- Power supplies and switch-mode power supplies (SMPS).
- Motor drives and control systems.
- Renewable energy systems, such as solar and wind power inverters.
- Industrial automation and control systems.
- High-frequency welding equipment.
Q & A
- What is the maximum collector-emitter voltage of the STGWT60H65DFB IGBT?
The maximum collector-emitter voltage is 650 V. - What is the maximum collector current of the STGWT60H65DFB IGBT?
The maximum collector current is 60 A @ 25°C. - What is the typical collector-emitter saturation voltage of the STGWT60H65DFB IGBT?
The typical collector-emitter saturation voltage is 1.75 V @ 25°C. - What is the maximum junction temperature of the STGWT60H65DFB IGBT?
The maximum junction temperature is 175 °C. - What package type is the STGWT60H65DFB IGBT available in?
The STGWT60H65DFB IGBT is available in the TO247 package. - Does the STGWT60H65DFB IGBT include an anti-parallel diode?
Yes, the STGWT60H65DFB IGBT includes an anti-parallel diode. - What is the rise time of the STGWT60H65DFB IGBT?
The rise time is typically 38 ns. - What are some common applications of the STGWT60H65DFB IGBT?
Common applications include power supplies, motor drives, renewable energy systems, industrial automation, and high-frequency welding equipment. - What is the maximum power dissipation of the STGWT60H65DFB IGBT?
The maximum power dissipation is 375 W. - What is the operating temperature range of the STGWT60H65DFB IGBT?
The operating temperature range is -55°C to +175°C @ Tj.
