Overview
The IKW75N60T IGBT from Infineon Technologies is a high-performance, 600 V, 75 A Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. This device is part of the TRENCHSTOP™ series and features a TO-247 package with an anti-parallel diode. The combination of trench-cell and fieldstop technology enhances both static and dynamic performance, offering low conduction and switching losses. The integrated soft recovery emitter-controlled diode minimizes turn-on losses, ensuring high efficiency.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-emitter voltage | VCE | 600 | V |
DC collector current (TC = 25°C) | IC | 75 | A |
Pulsed collector current (limited by Tjmax) | ICp | 225 | A |
Gate-emitter voltage | VGE | ±20 | V |
Short circuit withstand time | tSC | 5 μs | |
Maximum junction temperature | Tjmax | 175 | °C |
Power dissipation (TC = 25°C) | Ptot | 428 | W |
Typical VCE(sat) at Tj = 25°C | VCE(sat) | 1.5 | V |
Key Features
- Very low VCE(sat) of 1.5 V (typ.) for lower conduction losses
- Low switching losses due to TRENCHSTOP™ and Fieldstop technology
- Easy parallel switching capability due to positive temperature coefficient in VCE(sat)
- Very soft, fast recovery anti-parallel Emitter Controlled diode
- High ruggedness and temperature stable behavior
- Low EMI emissions
- Low gate charge
- Tight parameter distribution
- Pb-free lead plating; RoHS compliant
Applications
- Frequency Converters
- Uninterrupted Power Supply (UPS)
Q & A
- What is the collector-emitter voltage rating of the IKW75N60T IGBT?
The collector-emitter voltage rating is 600 V.
- What is the maximum DC collector current at 25°C?
The maximum DC collector current at 25°C is 75 A.
- What is the typical VCE(sat) at 25°C?
The typical VCE(sat) at 25°C is 1.5 V.
- What is the short circuit withstand time of the IKW75N60T?
The short circuit withstand time is 5 μs.
- What are the key technologies used in the IKW75N60T IGBT?
The key technologies include TRENCHSTOP™ and Fieldstop technology.
- What type of diode is integrated with the IKW75N60T IGBT?
The integrated diode is a soft recovery emitter-controlled diode.
- What are the typical applications of the IKW75N60T IGBT?
Typical applications include frequency converters and uninterrupted power supply (UPS) systems.
- Is the IKW75N60T IGBT RoHS compliant?
Yes, the IKW75N60T IGBT is RoHS compliant with Pb-free lead plating.
- What is the maximum junction temperature of the IKW75N60T IGBT?
The maximum junction temperature is 175°C.
- What is the power dissipation at 25°C for the IKW75N60T IGBT?
The power dissipation at 25°C is 428 W.