IKW75N60TXK
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Infineon Technologies IKW75N60TXK

Manufacturer No:
IKW75N60TXK
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IKW75N60 - DISCRETE IGBT WITH AN
Delivery:
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iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IKW75N60T IGBT from Infineon Technologies is a high-performance, 600 V, 75 A Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. This device is part of the TRENCHSTOP™ series and features a TO-247 package with an anti-parallel diode. The combination of trench-cell and fieldstop technology enhances both static and dynamic performance, offering low conduction and switching losses. The integrated soft recovery emitter-controlled diode minimizes turn-on losses, ensuring high efficiency.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current (TC = 25°C) IC 75 A
Pulsed collector current (limited by Tjmax) ICp 225 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time tSC 5 μs
Maximum junction temperature Tjmax 175 °C
Power dissipation (TC = 25°C) Ptot 428 W
Typical VCE(sat) at Tj = 25°C VCE(sat) 1.5 V

Key Features

  • Very low VCE(sat) of 1.5 V (typ.) for lower conduction losses
  • Low switching losses due to TRENCHSTOP™ and Fieldstop technology
  • Easy parallel switching capability due to positive temperature coefficient in VCE(sat)
  • Very soft, fast recovery anti-parallel Emitter Controlled diode
  • High ruggedness and temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Tight parameter distribution
  • Pb-free lead plating; RoHS compliant

Applications

  • Frequency Converters
  • Uninterrupted Power Supply (UPS)

Q & A

  1. What is the collector-emitter voltage rating of the IKW75N60T IGBT?

    The collector-emitter voltage rating is 600 V.

  2. What is the maximum DC collector current at 25°C?

    The maximum DC collector current at 25°C is 75 A.

  3. What is the typical VCE(sat) at 25°C?

    The typical VCE(sat) at 25°C is 1.5 V.

  4. What is the short circuit withstand time of the IKW75N60T?

    The short circuit withstand time is 5 μs.

  5. What are the key technologies used in the IKW75N60T IGBT?

    The key technologies include TRENCHSTOP™ and Fieldstop technology.

  6. What type of diode is integrated with the IKW75N60T IGBT?

    The integrated diode is a soft recovery emitter-controlled diode.

  7. What are the typical applications of the IKW75N60T IGBT?

    Typical applications include frequency converters and uninterrupted power supply (UPS) systems.

  8. Is the IKW75N60T IGBT RoHS compliant?

    Yes, the IKW75N60T IGBT is RoHS compliant with Pb-free lead plating.

  9. What is the maximum junction temperature of the IKW75N60T IGBT?

    The maximum junction temperature is 175°C.

  10. What is the power dissipation at 25°C for the IKW75N60T IGBT?

    The power dissipation at 25°C is 428 W.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:- 
Power - Max:- 
Switching Energy:- 
Input Type:- 
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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