Overview
The STGB20H60DF is a high-speed trench gate field-stop IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics. This device is part of a series that offers an optimal balance between conduction and switching losses, making it highly efficient for very high frequency converters. The IGBT is designed using an advanced proprietary trench gate and field stop structure, which enhances its performance and reliability.
The STGB20H60DF is available in the D²PAK package and is suitable for a variety of applications that require high-speed switching and low thermal resistance. It features a positive VCE(sat) temperature coefficient and tight parameter distribution, which facilitates safe paralleling operations.
Key Specifications
| Parameter | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|
| Collector-emitter voltage (VCE) | V | - | - | 600 |
| Continuous collector current at TC = 25 °C | A | - | - | 40 |
| Continuous collector current at TC = 100 °C | A | - | - | 20 |
| Pulsed collector current | A | - | - | 80 |
| Gate-emitter voltage (VGE) | V | - | - | ±20 |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 20 A, VGE = 15 V | V | 1.6 | 2.0 | - |
| Gate threshold voltage (VGE(th)) | V | 5.0 | 6.0 | 7.0 |
| Thermal resistance junction-case (RthJC) for IGBT | °C/W | - | 0.9 | - |
| Thermal resistance junction-ambient (RthJA) | °C/W | - | 62.5 | - |
Key Features
- High-speed switching capabilities
- Tight parameters distribution for easier paralleling operations
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
- Positive VCE(sat) temperature coefficient
- Advanced proprietary trench gate and field stop structure
Applications
- Motor control
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC)
Q & A
- What is the collector-emitter voltage rating of the STGB20H60DF?
The collector-emitter voltage (VCE) rating is 600 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 40 A at 25 °C and 20 A at 100 °C.
- What is the pulsed collector current rating?
The pulsed collector current rating is 80 A.
- What is the gate-emitter voltage range?
The gate-emitter voltage (VGE) range is ±20 V.
- What is the collector-emitter saturation voltage (VCE(sat)) at IC = 20 A and VGE = 15 V?
The VCE(sat) is typically 2.0 V, with a minimum of 1.6 V and a maximum of 2.0 V.
- What is the thermal resistance junction-case (RthJC) for the IGBT?
The thermal resistance junction-case (RthJC) for the IGBT is 0.9 °C/W.
- What are the key features of the STGB20H60DF?
The key features include high-speed switching, tight parameters distribution, low thermal resistance, short-circuit rating, and an ultrafast soft recovery antiparallel diode.
- In which packages is the STGB20H60DF available?
The STGB20H60DF is available in the D²PAK package.
- What are the typical applications of the STGB20H60DF?
The typical applications include motor control, UPS, and PFC.
- What is the significance of the positive VCE(sat) temperature coefficient?
The positive VCE(sat) temperature coefficient makes it easier to parallel multiple devices, as it helps in maintaining consistent performance across different temperatures.
