FGH60N60SFDTU-F085
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onsemi FGH60N60SFDTU-F085

Manufacturer No:
FGH60N60SFDTU-F085
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT FIELD STOP 600V 120A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGH60N60SFDTU-F085 is a Field Stop IGBT (Insulated Gate Bipolar Transistor) produced by ON Semiconductor. This device is part of ON Semiconductor’s new series of Field Stop IGBTs, which utilize novel Field Stop technology to offer optimum performance in various high-power applications. The IGBT is designed to provide low conduction and switching losses, making it ideal for use in automotive chargers, inverters, and other high-voltage auxiliary systems.

Key Specifications

Parameter Symbol Test Conditions Typical Value Unit
Collector to Emitter Voltage VCES VGE = 0 V, IC = 250 μA 600 V
Gate to Emitter Voltage VGES - ±20 V
Collector Current (TC = 25°C) IC - 60 A A
Collector Current (TC = 100°C) IC - 60 A A
Pulsed Collector Current (TC = 25°C) ICM - 180 A A
Maximum Power Dissipation (TC = 25°C) PD - 378 W W
Operating Junction Temperature TJ - -55 to +150 °C °C
Collector to Emitter Saturation Voltage VCE(sat) IC = 60 A, VGE = 15 V 2.2 V V
Turn-On Delay Time td(on) VCC = 400 V, IC = 60 A, RG = 5 Ω, VGE = 15 V 26 ns ns
Turn-Off Delay Time td(off) VCC = 400 V, IC = 60 A, RG = 5 Ω, VGE = 15 V 134 ns ns

Key Features

  • High Current Capability: The IGBT can handle high collector currents up to 60 A at 100°C and 120 A at 25°C.
  • Low Saturation Voltage: With a typical VCE(sat) of 2.2 V at IC = 60 A, this device minimizes conduction losses.
  • High Input Impedance: Ensures stable operation and reduces the risk of unwanted switching.
  • Fast Switching: Features fast turn-on and turn-off times, making it suitable for high-frequency applications.
  • Automotive Qualification: Qualified to meet the stringent requirements of AEC-Q101, ensuring reliability in automotive applications.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with global regulations.

Applications

  • Automotive Chargers and Converters: Ideal for high-power charging systems and converters in electric and hybrid vehicles.
  • Inverters and PFC (Power Factor Correction): Suitable for use in power inverters and PFC circuits due to its low switching losses.
  • High Voltage Auxiliaries: Used in various high-voltage auxiliary systems in automotive and industrial applications.
  • UPS (Uninterruptible Power Supplies): Enhances the performance and efficiency of UPS systems.

Q & A

  1. What is the maximum collector to emitter voltage of the FGH60N60SFDTU-F085?

    The maximum collector to emitter voltage (VCES) is 600 V.

  2. What is the typical collector to emitter saturation voltage at 60 A?

    The typical collector to emitter saturation voltage (VCE(sat)) at IC = 60 A is 2.2 V.

  3. What are the operating junction temperature limits for this IGBT?

    The operating junction temperature (TJ) range is from -55°C to +150°C.

  4. Is the FGH60N60SFDTU-F085 qualified for automotive applications?

    Yes, it is qualified to meet the automotive requirements of AEC-Q101.

  5. What is the maximum power dissipation at 25°C?

    The maximum power dissipation (PD) at 25°C is 378 W.

  6. What is the typical turn-on delay time?

    The typical turn-on delay time (td(on)) is 26 ns under specified conditions.

  7. Is the device Pb-Free and RoHS compliant?

    Yes, the device is Pb-Free and RoHS compliant.

  8. What are some common applications for this IGBT?

    Common applications include automotive chargers, inverters, PFC, UPS, and high-voltage auxiliaries.

  9. What is the thermal resistance from junction to case (RJC) for this IGBT?

    The thermal resistance from junction to case (RJC) is 0.33 °C/W.

  10. What is the package type of the FGH60N60SFDTU-F085?

    The package type is TO-247-3LD.

Product Attributes

IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):120 A
Current - Collector Pulsed (Icm):180 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 60A
Power - Max:378 W
Switching Energy:1.97mJ (on), 570µJ (off)
Input Type:Standard
Gate Charge:188 nC
Td (on/off) @ 25°C:26ns/134ns
Test Condition:400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr):55 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number FGH60N60SFDTU-F085 FGH60N60UFDTU-F085 FGH20N60SFDTU-F085 FGH40N60SFDTU-F085
Manufacturer onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Active Active
IGBT Type Field Stop Field Stop Field Stop Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 120 A 120 A 40 A 80 A
Current - Collector Pulsed (Icm) 180 A 180 A 60 A 120 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A 2.9V @ 15V, 60A 2.8V @ 15V, 20A 2.9V @ 15V, 40A
Power - Max 378 W 298 W 165 W 290 W
Switching Energy 1.97mJ (on), 570µJ (off) 2.47mJ (on), 810µJ (off) 430µJ (on), 130µJ (off) 1.23mJ (on), 380µJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 188 nC 192 nC 66 nC 121 nC
Td (on/off) @ 25°C 26ns/134ns 29ns/138ns 13ns/90ns 21ns/138ns
Test Condition 400V, 60A, 5Ohm, 15V 400V, 60A, 5Ohm, 15V 400V, 20A, 10Ohm, 15V 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 55 ns 76 ns 40 ns 68 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247 TO-247

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