Overview
The FGH60N60SFDTU-F085 is a Field Stop IGBT (Insulated Gate Bipolar Transistor) produced by ON Semiconductor. This device is part of ON Semiconductor’s new series of Field Stop IGBTs, which utilize novel Field Stop technology to offer optimum performance in various high-power applications. The IGBT is designed to provide low conduction and switching losses, making it ideal for use in automotive chargers, inverters, and other high-voltage auxiliary systems.
Key Specifications
| Parameter | Symbol | Test Conditions | Typical Value | Unit |
|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | VGE = 0 V, IC = 250 μA | 600 | V |
| Gate to Emitter Voltage | VGES | - | ±20 | V |
| Collector Current (TC = 25°C) | IC | - | 60 A | A |
| Collector Current (TC = 100°C) | IC | - | 60 A | A |
| Pulsed Collector Current (TC = 25°C) | ICM | - | 180 A | A |
| Maximum Power Dissipation (TC = 25°C) | PD | - | 378 W | W |
| Operating Junction Temperature | TJ | - | -55 to +150 °C | °C |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 60 A, VGE = 15 V | 2.2 V | V |
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 60 A, RG = 5 Ω, VGE = 15 V | 26 ns | ns |
| Turn-Off Delay Time | td(off) | VCC = 400 V, IC = 60 A, RG = 5 Ω, VGE = 15 V | 134 ns | ns |
Key Features
- High Current Capability: The IGBT can handle high collector currents up to 60 A at 100°C and 120 A at 25°C.
- Low Saturation Voltage: With a typical VCE(sat) of 2.2 V at IC = 60 A, this device minimizes conduction losses.
- High Input Impedance: Ensures stable operation and reduces the risk of unwanted switching.
- Fast Switching: Features fast turn-on and turn-off times, making it suitable for high-frequency applications.
- Automotive Qualification: Qualified to meet the stringent requirements of AEC-Q101, ensuring reliability in automotive applications.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with global regulations.
Applications
- Automotive Chargers and Converters: Ideal for high-power charging systems and converters in electric and hybrid vehicles.
- Inverters and PFC (Power Factor Correction): Suitable for use in power inverters and PFC circuits due to its low switching losses.
- High Voltage Auxiliaries: Used in various high-voltage auxiliary systems in automotive and industrial applications.
- UPS (Uninterruptible Power Supplies): Enhances the performance and efficiency of UPS systems.
Q & A
- What is the maximum collector to emitter voltage of the FGH60N60SFDTU-F085?
The maximum collector to emitter voltage (VCES) is 600 V.
- What is the typical collector to emitter saturation voltage at 60 A?
The typical collector to emitter saturation voltage (VCE(sat)) at IC = 60 A is 2.2 V.
- What are the operating junction temperature limits for this IGBT?
The operating junction temperature (TJ) range is from -55°C to +150°C.
- Is the FGH60N60SFDTU-F085 qualified for automotive applications?
Yes, it is qualified to meet the automotive requirements of AEC-Q101.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) at 25°C is 378 W.
- What is the typical turn-on delay time?
The typical turn-on delay time (td(on)) is 26 ns under specified conditions.
- Is the device Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant.
- What are some common applications for this IGBT?
Common applications include automotive chargers, inverters, PFC, UPS, and high-voltage auxiliaries.
- What is the thermal resistance from junction to case (RJC) for this IGBT?
The thermal resistance from junction to case (RJC) is 0.33 °C/W.
- What is the package type of the FGH60N60SFDTU-F085?
The package type is TO-247-3LD.
