Overview
The FGH50T65SQD-F155 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by onsemi, utilizing novel field stop IGBT technology. This device is designed to offer optimal performance in applications requiring low conduction and switching losses. It features a collector to emitter voltage (VCES) of 650 V and a collector current (IC) of 50 A, making it suitable for a variety of power electronics applications.
Key Specifications
| Parameter | Description | Unit | Typical Value | Maximum Value |
|---|---|---|---|---|
| VCES | Collector to Emitter Voltage | V | - | 650 |
| VGES | Gate to Emitter Voltage | V | - | ±20 |
| IC | Collector Current at TC = 25°C | A | - | 100 |
| IC at TC = 100°C | Collector Current at TC = 100°C | A | - | 50 |
| ILM | Pulsed Collector Current at TC = 25°C | A | - | 200 |
| PD at TC = 25°C | Maximum Power Dissipation at TC = 25°C | W | - | 268 |
| TJ | Operating Junction Temperature | °C | -55 to +175 | - |
| VCE(sat) at IC = 50 A, TC = 25°C | Collector to Emitter Saturation Voltage | V | 1.6 | 2.1 |
| RθJC (IGBT) | Thermal Resistance, Junction to Case | °C/W | - | 0.56 |
Key Features
- Max Junction Temperature TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 50 A
- 100% of the Parts Tested for ILM
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- Pb-Free and RoHS Compliant
Applications
- Solar Inverter
- UPS (Uninterruptible Power Supply)
- Welder
- Telecom
- ESS (Energy Storage System)
- PFC (Power Factor Correction)
Q & A
- What is the collector to emitter voltage (VCES) of the FGH50T65SQD-F155 IGBT?
The collector to emitter voltage (VCES) is 650 V.
- What is the maximum collector current (IC) at 25°C for this IGBT?
The maximum collector current (IC) at 25°C is 100 A.
- What is the operating junction temperature range for this device?
The operating junction temperature range is from -55°C to +175°C.
- What is the typical collector to emitter saturation voltage (VCE(sat)) at IC = 50 A and TC = 25°C?
The typical collector to emitter saturation voltage (VCE(sat)) is 1.6 V.
- Is the FGH50T65SQD-F155 IGBT Pb-Free and RoHS compliant?
- What are the typical applications for the FGH50T65SQD-F155 IGBT?
The typical applications include solar inverters, UPS, welders, telecom, ESS, and PFC.
- What is the thermal resistance from junction to case (RθJC) for the IGBT?
The thermal resistance from junction to case (RθJC) is 0.56 °C/W.
- What is the maximum power dissipation at TC = 25°C for this device?
The maximum power dissipation at TC = 25°C is 268 W.
- Does the FGH50T65SQD-F155 IGBT have a positive temperature coefficient for easy parallel operating?
- What is the turn-on delay time (Td(on)) at VCC = 400 V, IC = 12.5 A, and VGE = 15 V?
The turn-on delay time (Td(on)) is approximately 22 ns at TC = 25°C.
