Overview
The HGTD1N120BNS9A is a high-voltage Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device is based on Non-Punch Through (NPT) IGBT technology, making it ideal for various high-voltage switching applications that operate at moderate frequencies. The HGTD1N120BNS9A is packaged in a TO-252AA (DPAK) case, which is compact and suitable for a wide range of power management and control systems.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vce) | 1.2 kV |
| Continuous Collector Current at 25°C (Ic) | 5.3 A |
| Power Dissipation (Pd) | 60 W |
| Gate-Emitter Voltage (Vge) | ±20 V |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252AA (DPAK) |
Key Features
- Non-Punch Through (NPT) IGBT technology for high reliability and performance.
- High collector-emitter voltage of 1.2 kV, suitable for high-voltage applications.
- Continuous collector current of 5.3 A at 25°C, ensuring robust current handling.
- Compact TO-252AA (DPAK) package for space-efficient designs.
- Wide operating temperature range from -55°C to 150°C, making it versatile for various environments.
Applications
The HGTD1N120BNS9A IGBT is designed for use in a variety of high-voltage switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Industrial power management systems.
- Renewable energy systems, such as solar and wind power inverters.
- Automotive and electric vehicle systems.
Q & A
- What is the collector-emitter voltage of the HGTD1N120BNS9A IGBT?
The collector-emitter voltage is 1.2 kV. - What is the continuous collector current at 25°C for this IGBT?
The continuous collector current at 25°C is 5.3 A. - What is the power dissipation of the HGTD1N120BNS9A?
The power dissipation is 60 W. - What is the gate-emitter voltage range for this device?
The gate-emitter voltage range is ±20 V. - What is the operating temperature range of the HGTD1N120BNS9A?
The operating temperature range is from -55°C to 150°C. - What type of package does the HGTD1N120BNS9A come in?
The HGTD1N120BNS9A comes in a TO-252AA (DPAK) package. - What technology is used in the HGTD1N120BNS9A IGBT?
The HGTD1N120BNS9A uses Non-Punch Through (NPT) IGBT technology. - Is the HGTD1N120BNS9A suitable for high-voltage applications?
Yes, it is suitable for high-voltage switching applications. - Can the HGTD1N120BNS9A be used in automotive systems?
Yes, it can be used in automotive and electric vehicle systems. - Where can I find detailed specifications for the HGTD1N120BNS9A?
Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and TME.
