STGW25M120DF3
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STMicroelectronics STGW25M120DF3

Manufacturer No:
STGW25M120DF3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 1200V 50A 375W
Delivery:
Payment:
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Product Introduction

Overview

The STGW25M120DF3 is a high-performance insulated-gate bipolar transistor (IGBT) developed by STMicroelectronics. This device is part of the M series IGBTs, which are known for their low-loss characteristics and advanced proprietary trench gate field-stop structure. The STGW25M120DF3 is housed in a TO-247 package and is designed to operate at high voltages and currents, making it suitable for various industrial and power management applications.

Key Specifications

ParameterValue
ManufacturerSTMicroelectronics
CaseTO-247
Power Dissipation [W]375
Turn-on Delay Time [ns]28
Max. Collector-Emitter Breakdown Voltage [V]1200
Min. Gate Threshold Voltage [V]5
Max. Collector Current, Pulsed [A]100
Turn-off Delay Time [ns]150
Max. Continuous Collector Current at TC = 25°C [A]50

Key Features

  • Trench gate field-stop structure for improved performance and efficiency.
  • Low-loss characteristics suitable for high-frequency applications (2 to 20 kHz).
  • High voltage rating of 1200 V and high current handling capability of up to 50 A continuous and 100 A pulsed.
  • TO-247 package for robust and reliable operation.
  • Advanced proprietary technology ensuring low turn-on and turn-off delay times.

Applications

The STGW25M120DF3 is designed for various high-power applications, including:

  • Industrial power supplies and converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power inverters.
  • High-frequency switching applications.
  • Power factor correction (PFC) circuits.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the STGW25M120DF3? The maximum collector-emitter breakdown voltage is 1200 V.
  2. What is the package type of the STGW25M120DF3? The STGW25M120DF3 is housed in a TO-247 package.
  3. What is the maximum continuous collector current at 25°C? The maximum continuous collector current at 25°C is 50 A.
  4. What is the turn-on delay time of the STGW25M120DF3? The turn-on delay time is 28 ns.
  5. What is the turn-off delay time of the STGW25M120DF3? The turn-off delay time is 150 ns.
  6. What are the typical applications of the STGW25M120DF3? Typical applications include industrial power supplies, motor drives, renewable energy systems, and high-frequency switching applications.
  7. What is the power dissipation capability of the STGW25M120DF3? The power dissipation capability is 375 W.
  8. What is the minimum gate threshold voltage of the STGW25M120DF3? The minimum gate threshold voltage is 5 V.
  9. Is the STGW25M120DF3 suitable for high-frequency operations? Yes, it is suitable for high-frequency operations between 2 to 20 kHz.
  10. What is the maximum pulsed collector current of the STGW25M120DF3? The maximum pulsed collector current is 100 A.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):50 A
Current - Collector Pulsed (Icm):100 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 25A
Power - Max:375 W
Switching Energy:850µJ (on), 1.3mJ (off)
Input Type:Standard
Gate Charge:85 nC
Td (on/off) @ 25°C:28ns/150ns
Test Condition:600V, 25A, 15Ohm, 15V
Reverse Recovery Time (trr):265 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Same Series
STGWA25M120DF3
STGWA25M120DF3
IGBT 1200V 50A 375W TO247

Similar Products

Part Number STGW25M120DF3 STGW25S120DF3 STGWA25M120DF3 STGW15M120DF3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) 50 A 50 A 50 A 30 A
Current - Collector Pulsed (Icm) 100 A 100 A 100 A 60 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 25A 2.1V @ 15V, 25A 2.3V @ 15V, 25A 2.3V @ 15V, 15A
Power - Max 375 W 375 W 375 W 259 W
Switching Energy 850µJ (on), 1.3mJ (off) 830µJ (on), 2.37mJ (off) 850µJ (on), 1.3mJ (off) 550µJ (on), 850µJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 85 nC 80 nC 85 nC 226 nC
Td (on/off) @ 25°C 28ns/150ns 31ns/147ns 28ns/150ns 26ns/122ns
Test Condition 600V, 25A, 15Ohm, 15V 600V, 25A, 15Ohm, 15V 600V, 25A, 15Ohm, 15V 600V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr) 265 ns 265 ns 265 ns 270 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247 Long Leads TO-247

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