Overview
The STL160N4F7 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device utilizes the advanced STripFET F7 technology, which features an enhanced trench gate structure. This design results in very low on-state resistance, making it highly efficient for various power management applications. The STL160N4F7 is packaged in a PowerFLAT 5x6 package, which is designed to optimize thermal performance and reduce parasitic inductances.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 40 V |
| RDS(on) (On-State Resistance) | 2.1 mΩ (typ.) |
| ID (Drain Current) | 120 A |
| TJ (Junction Temperature) | +175 °C |
| Pd (Power Dissipation) | 4.8 W |
| Channel Mode | Enhancement |
| Package | PowerFLAT 5x6 |
Key Features
- Low on-state resistance (RDS(on)) of 2.1 mΩ (typ.) due to STripFET F7 technology.
- High drain current (ID) of 120 A.
- Enhanced trench gate structure for improved performance.
- PowerFLAT 5x6 package for optimized thermal performance and reduced parasitic inductances.
- Maximum junction temperature of +175 °C.
Applications
The STL160N4F7 is suitable for a wide range of high-power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drives.
- Automotive systems (e.g., electric vehicles, hybrid vehicles).
- Industrial power systems and control.
- Renewable energy systems (e.g., solar, wind power).
Q & A
- What is the maximum drain-source voltage (VDS) of the STL160N4F7?
The maximum drain-source voltage is 40 V. - What is the typical on-state resistance (RDS(on)) of the STL160N4F7?
The typical on-state resistance is 2.1 mΩ. - What is the maximum drain current (ID) of the STL160N4F7?
The maximum drain current is 120 A. - What is the maximum junction temperature (TJ) of the STL160N4F7?
The maximum junction temperature is +175 °C. - What package type is used for the STL160N4F7?
The STL160N4F7 is packaged in a PowerFLAT 5x6 package. - What technology is used in the STL160N4F7?
The STL160N4F7 uses STripFET F7 technology with an enhanced trench gate structure. - What are some typical applications for the STL160N4F7?
Typical applications include power supplies, motor control, automotive systems, industrial power systems, and renewable energy systems. - What is the power dissipation (Pd) of the STL160N4F7?
The power dissipation is 4.8 W. - Is the STL160N4F7 suitable for high-temperature environments?
Yes, it is suitable for high-temperature environments with a maximum junction temperature of +175 °C. - What are the benefits of the PowerFLAT 5x6 package used in the STL160N4F7?
The PowerFLAT 5x6 package optimizes thermal performance and reduces parasitic inductances.
