Overview
The STP19NF20 is a high-performance N-channel Power MOSFET designed by STMicroelectronics using their consolidated strip layout-based MESH OVERLAY™ process. This technology enhances the device's performance, making it comparable or superior to standard parts from other manufacturers. The STP19NF20 is available in a TO-220 package and is tailored for high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source voltage) | 200 | V |
| VGS (Gate-source voltage) | ±20 | V |
| ID (Drain current, continuous) at TC = 25 °C | 15 | A |
| ID (Drain current, continuous) at TC = 100 °C | 9.45 | A |
| RDS(on) (On-state resistance) | 0.11 Ω (typ.) | Ω |
| IDM (Drain current, pulsed) | 60 | A |
| VSD (Forward on voltage) | 1.6 | V |
| trr (Reverse recovery time) | 125 ns (typ.) | ns |
| Qrr (Reverse recovery charge) | 0.55 µC (typ.) | µC |
| IRRM (Reverse recovery current) | 8.8 A (typ.) | A |
Key Features
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitances
- High-performance MESH OVERLAY™ process
- Available in TO-220 package
Applications
The STP19NF20 is primarily used in high-power switching applications, including but not limited to:
- Power supplies and converters
- Motor control and drives
- Industrial automation
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage of the STP19NF20?
The maximum drain-source voltage (VDS) is 200 V.
- What is the typical on-state resistance (RDS(on)) of the STP19NF20?
The typical on-state resistance is 0.11 Ω.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is 15 A.
- What is the reverse recovery time (trr) of the STP19NF20?
The typical reverse recovery time is 125 ns.
- What are the key features of the STP19NF20?
The key features include extremely high dv/dt capability, minimized gate charge, and very low intrinsic capacitances.
- In which package is the STP19NF20 available?
The STP19NF20 is available in a TO-220 package.
- What is the maximum gate-source voltage (VGS)?
The maximum gate-source voltage is ±20 V.
- What is the single pulse avalanche energy (EAS) of the STP19NF20?
The single pulse avalanche energy is 110 mJ.
- What are some common applications of the STP19NF20?
Common applications include power supplies, motor control, industrial automation, and high-frequency switching circuits.
- What technology is used in the design of the STP19NF20?
The STP19NF20 is designed using STMicroelectronics' consolidated strip layout-based MESH OVERLAY™ process.
