CSD17484F4
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Texas Instruments CSD17484F4

Manufacturer No:
CSD17484F4
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 3A 3PICOSTAR
Delivery:
Payment:
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Product Introduction

Overview

The CSD17484F4 is a 30-V N-Channel FemtoFET MOSFET produced by Texas Instruments. This device is designed for high-performance applications requiring low on-resistance and high efficiency. The FemtoFET series is known for its compact size and excellent thermal characteristics, making it suitable for a wide range of electronic systems.

The CSD17484F4 is available in a 0402 Land Grid Array (LGA) package, which is highly compact and suitable for space-constrained designs. It features a low on-state resistance, high current handling, and robust thermal performance, making it an ideal choice for power management, switching circuits, and other high-current applications.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
VDS Drain-to-Source Voltage VGS = 0 V, IDS = 250 μA - - 30 V
VGS Gate-to-Source Voltage - - - 12 V
ID Continuous Drain Current - - - 3.0 A
IDM Pulsed Drain Current Pulse duration ≤ 100 μs, duty cycle ≤ 1% - - 18 A
RDS(on) Drain-to-Source On-Resistance VGS = 1.8 V, IDS = 0.5 A 170 - 270
RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V, IDS = 0.5 A 125 - 160
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V, IDS = 0.5 A 107 - 128
RDS(on) Drain-to-Source On-Resistance VGS = 8.0 V, IDS = 0.5 A 99 - 121
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = 250 μA 0.65 0.85 1.10 V
TJ, Tstg Operating Junction, Storage Temperature - -55 - 150 °C

Key Features

  • Low On-State Resistance: The CSD17484F4 offers low RDS(on) values, ranging from 99 mΩ to 170 mΩ depending on the gate-to-source voltage, ensuring high efficiency in power management applications.
  • High Current Handling: With a continuous drain current of 3.0 A and a pulsed drain current of 18 A, this MOSFET is suitable for high-current applications.
  • Compact Package: The 0402 LGA package is highly compact, making it ideal for space-constrained designs.
  • Robust Thermal Performance: The device has a junction-to-ambient thermal resistance of 85 °C/W, ensuring reliable operation in various thermal conditions.
  • Wide Operating Temperature Range: The MOSFET operates over a temperature range of -55°C to 150°C, making it versatile for different environmental conditions.

Applications

  • Power Management: Suitable for DC-DC converters, power supplies, and other power management circuits due to its low on-resistance and high current handling.
  • Switching Circuits: Ideal for high-frequency switching applications such as motor control, audio amplifiers, and other high-speed switching circuits.
  • Portable Electronics: The compact size and low power consumption make it suitable for battery-powered devices and other portable electronics.
  • Automotive Systems: Can be used in automotive systems that require high reliability and robust thermal performance.

Q & A

  1. What is the maximum drain-to-source voltage of the CSD17484F4 MOSFET?

    The maximum drain-to-source voltage (VDS) is 30 V.

  2. What is the typical on-state resistance of the CSD17484F4 at VGS = 4.5 V?

    The typical on-state resistance (RDS(on)) at VGS = 4.5 V is 107 mΩ.

  3. What is the continuous drain current rating of the CSD17484F4?

    The continuous drain current (ID) rating is 3.0 A.

  4. What is the operating junction temperature range of the CSD17484F4?

    The operating junction temperature range is -55°C to 150°C.

  5. What package type is the CSD17484F4 available in?

    The CSD17484F4 is available in a 0402 Land Grid Array (LGA) package.

  6. What is the gate-to-source threshold voltage of the CSD17484F4?

    The gate-to-source threshold voltage (VGS(th)) is typically 0.85 V.

  7. What is the junction-to-ambient thermal resistance of the CSD17484F4?

    The junction-to-ambient thermal resistance (RθJA) is typically 85 °C/W.

  8. Is the CSD17484F4 suitable for high-frequency switching applications?

    Yes, it is suitable for high-frequency switching applications due to its low on-resistance and fast switching times.

  9. Can the CSD17484F4 be used in automotive systems?

    Yes, it can be used in automotive systems due to its robust thermal performance and reliability.

  10. What is the recommended PCB layout for the CSD17484F4?

    The recommended PCB layout can be found in the datasheet under the section 'Recommended Minimum PCB Layout'.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
Rds On (Max) @ Id, Vgs:121mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.2 nC @ 4.5 V
Vgs (Max):12V
Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-XFDFN
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Similar Products

Part Number CSD17484F4 CSD17484F4T CSD17483F4
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V 1.8V, 8V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 121mOhm @ 500mA, 8V 121mOhm @ 500mA, 8V 240mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 4.5 V 0.2 nC @ 8 V 1.3 nC @ 4.5 V
Vgs (Max) 12V 12V 12V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 15 V 195 pF @ 15 V 190 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR 3-PICOSTAR
Package / Case 3-XFDFN 3-XFDFN 3-XFDFN

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