CSD17483F4
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Texas Instruments CSD17483F4

Manufacturer No:
CSD17483F4
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 1.5A 3PICOSTAR
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The CSD17483F4 is a 30-V, N-Channel FemtoFET™ MOSFET produced by Texas Instruments. This ultra-small footprint MOSFET is designed to provide high performance in a compact package. It features low on-resistance, low gate charge, and an ultra-low profile, making it ideal for applications where space is limited. The device is part of the NexFET™ family, known for its high efficiency and reliability. The CSD17483F4 is suitable for a variety of applications, including power management, DC-DC converters, and other high-frequency switching circuits.

Key Specifications

Parameter Typical Value Unit
VDS - Drain to Source Voltage 30 V
VGS - Gate to Source Voltage 12 V
VGS(th) - Threshold Voltage 0.85 V
RDS(on) - On Resistance at VGS = 4.5V 200
Qg - Gate Charge Total (4.5V) 1010 pC
Qgd - Gate Charge Gate to Drain 130 pC
ID - Maximum Pulsed Drain Current 5 A
RθJA - Junction to Ambient Thermal Resistance 90 °C/W
Package Type 0402 Case Size (LGA 1.0 x 0.6mm)
Height 0.35 mm

Key Features

  • Ultra-small footprint (0402 case size) with dimensions of 1.0 mm x 0.6 mm and a height of 0.35 mm.
  • Low on-resistance (RDS(on)) of 200 mΩ at VGS = 4.5V.
  • Low gate charge (Qg) of 1010 pC and low gate-to-drain charge (Qgd) of 130 pC.
  • Low threshold voltage (VGS(th)) of 0.85 V.
  • Integrated ESD protection diode rated > 4 kV HBM and > 2 kV CDM.
  • RoHS compliant and Pb-Free (RoHS Exempt).

Applications

The CSD17483F4 is suitable for various applications requiring high efficiency and compact design, including:

  • Power management systems.
  • DC-DC converters.
  • High-frequency switching circuits.
  • Portable electronics.
  • Automotive systems.

Q & A

  1. What is the maximum drain-to-source voltage of the CSD17483F4?

    The maximum drain-to-source voltage (VDS) is 30 V.

  2. What is the typical on-resistance of the CSD17483F4 at VGS = 4.5V?

    The typical on-resistance (RDS(on)) at VGS = 4.5V is 200 mΩ.

  3. What is the gate charge total (Qg) at 4.5V for the CSD17483F4?

    The gate charge total (Qg) at 4.5V is 1010 pC.

  4. What is the threshold voltage (VGS(th)) of the CSD17483F4?

    The threshold voltage (VGS(th)) is 0.85 V.

  5. What is the package type and dimensions of the CSD17483F4?

    The package type is 0402 Case Size (LGA 1.0 x 0.6mm) with a height of 0.35 mm.

  6. Is the CSD17483F4 RoHS compliant?

    Yes, the CSD17483F4 is RoHS compliant and Pb-Free (RoHS Exempt).

  7. What is the maximum pulsed drain current (ID) for the CSD17483F4?

    The maximum pulsed drain current (ID) is 5 A.

  8. What is the junction-to-ambient thermal resistance (RθJA) of the CSD17483F4?

    The junction-to-ambient thermal resistance (RθJA) is typically 90 °C/W.

  9. Does the CSD17483F4 have integrated ESD protection?

    Yes, the CSD17483F4 has an integrated ESD protection diode rated > 4 kV HBM and > 2 kV CDM.

  10. What are some common applications for the CSD17483F4?

    Common applications include power management systems, DC-DC converters, high-frequency switching circuits, portable electronics, and automotive systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:240mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 4.5 V
Vgs (Max):12V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-XFDFN
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Similar Products

Part Number CSD17483F4 CSD17483F4T CSD17484F4
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) 1.5A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 8V
Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 8V 240mOhm @ 500mA, 8V 121mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 4.5 V 1.3 nC @ 4.5 V 1.2 nC @ 4.5 V
Vgs (Max) 12V 12V 12V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 15 V 190 pF @ 15 V 195 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR 3-PICOSTAR
Package / Case 3-XFDFN 3-XFDFN 3-XFDFN

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