Overview
The FDMS86101E is an N-Channel PowerTrench® MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in an 8-pin PQFN package and is known for its high efficiency and robust design.
Key Specifications
| Parameter | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | - | 100 | V |
| ID (Continuous Drain Current) | - | - | - | 60 | A |
| RDS(on) (Static Drain to Source On Resistance) | VGS = 10 V, ID = 13 A | - | 6.3 | 8 | mΩ |
| RDS(on) (Static Drain to Source On Resistance) | VGS = 6 V, ID = 9.5 A | - | 8.4 | 13.5 | mΩ |
| VGS(th) (Gate to Source Threshold Voltage) | VGS = VDS, ID = 250 μA | - | - | - | V |
| TJ (Junction Temperature) | - | -55 | - | 150 | °C |
| Pd (Power Dissipation) | - | - | - | 104 | W |
| Qg (Gate Charge) | - | - | 39 | - | nC |
Key Features
- Advanced PowerTrench® process for low RDS(on) and high efficiency
- Robust package design with MSL1 rating
- 100% UIL tested and 100% Rg tested
- Pb-free and RoHS compliant
- High current handling capability up to 60 A
- Low on-state resistance, with RDS(on) as low as 6.3 mΩ at VGS = 10 V, ID = 13 A
Applications
The FDMS86101E is suitable for various high-power applications, including:
- DC-DC conversion
- Power supplies
- Motor control
- Switching circuits requiring high efficiency and low on-state resistance
Q & A
- What is the maximum drain to source voltage of the FDMS86101E?
The maximum drain to source voltage (VDS) is 100 V. - What is the continuous drain current rating of the FDMS86101E?
The continuous drain current (ID) is up to 60 A. - What is the typical on-state resistance of the FDMS86101E at VGS = 10 V and ID = 13 A?
The typical on-state resistance (RDS(on)) is 6.3 mΩ at VGS = 10 V and ID = 13 A. - Is the FDMS86101E Pb-free and RoHS compliant?
Yes, the FDMS86101E is Pb-free and RoHS compliant. - What is the gate charge (Qg) of the FDMS86101E?
The gate charge (Qg) is 39 nC. - What is the maximum junction temperature of the FDMS86101E?
The maximum junction temperature (TJ) is 150°C. - What is the power dissipation (Pd) of the FDMS86101E?
The power dissipation (Pd) is up to 104 W. - What package type is used for the FDMS86101E?
The FDMS86101E is housed in an 8-pin PQFN package. - Is the FDMS86101E suitable for DC-DC conversion applications?
Yes, the FDMS86101E is suitable for DC-DC conversion applications due to its high efficiency and low on-state resistance. - What is the minimum operating temperature of the FDMS86101E?
The minimum operating temperature is -55°C.
