IRF7416TRPBF-1
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Infineon Technologies IRF7416TRPBF-1

Manufacturer No:
IRF7416TRPBF-1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 10A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7416TRPBF-1 is a P-Channel MOSFET produced by Infineon Technologies. It belongs to the fifth generation of HEXFETs, which utilize advanced processing techniques to achieve high performance. This MOSFET is packaged in an SO-8 surface mount package and is designed for various power management and switching applications. Although the product is currently listed as obsolete, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Min. Typ. Max. Units
Continuous Drain Current (ID) @ TA = 25°C, VGS = -10V - - -10 A
Continuous Drain Current (ID) @ TA = 70°C, VGS = -10V - - -7.1 A
Pulsed Drain Current (IDM) - - -45 A
Power Dissipation (PD) @ TA = 25°C - - 2.5 W
Gate-to-Source Voltage (VGS) - - ±20 V
Drain-to-Source Breakdown Voltage (V(BR)DSS) -30 - - V
Gate Threshold Voltage (VGS(th)) -1.0 - -2.04 V
Forward Transconductance (gfs) 5.6 - - S
Operating Junction Temperature (TJ) -55 - 150 °C
Junction-to-Ambient Thermal Resistance (RθJA) - - 50 °C/W

Key Features

  • Advanced Processing Techniques: The IRF7416TRPBF-1 utilizes fifth-generation HEXFET technology, ensuring high performance and reliability.
  • P-Channel MOSFET: This device is a P-Channel MOSFET, suitable for applications requiring high current and low on-resistance.
  • SO-8 Package: It is packaged in an SO-8 surface mount package, which is compact and suitable for a variety of board designs.
  • High Current Capability: The MOSFET can handle continuous drain currents up to 10A at 25°C and pulsed drain currents up to 45A.
  • Low On-Resistance: The device features low on-resistance, making it efficient for power management and switching applications.
  • Wide Operating Temperature Range: It operates over a junction temperature range of -55°C to 150°C, making it versatile for various environments.

Applications

  • Power Management: Suitable for power management in DC-DC converters, power supplies, and other high-current applications.
  • Switching Applications: Ideal for switching circuits, motor control, and other applications requiring high current and low on-resistance.
  • Automotive Systems: Can be used in automotive systems for power management and control due to its robust thermal performance.
  • Industrial Control Systems: Applicable in industrial control systems, such as motor drives and power inverters.

Q & A

  1. What is the continuous drain current of the IRF7416TRPBF-1 at 25°C?

    The continuous drain current is up to 10A at 25°C with VGS = -10V.

  2. What is the maximum gate-to-source voltage for the IRF7416TRPBF-1?

    The maximum gate-to-source voltage is ±20V.

  3. What is the package type of the IRF7416TRPBF-1?

    The package type is SO-8 surface mount.

  4. What is the operating junction temperature range of the IRF7416TRPBF-1?

    The operating junction temperature range is -55°C to 150°C.

  5. Is the IRF7416TRPBF-1 still in production?

    No, the IRF7416TRPBF-1 is currently listed as obsolete.

  6. What is the maximum power dissipation of the IRF7416TRPBF-1 at 25°C?

    The maximum power dissipation is 2.5W at 25°C.

  7. What is the typical forward transconductance of the IRF7416TRPBF-1?

    The typical forward transconductance is 5.6S.

  8. What are some common applications for the IRF7416TRPBF-1?

    Common applications include power management, switching circuits, automotive systems, and industrial control systems.

  9. What is the junction-to-ambient thermal resistance of the IRF7416TRPBF-1?

    The junction-to-ambient thermal resistance is 50°C/W.

  10. What is the drain-to-source breakdown voltage of the IRF7416TRPBF-1?

    The drain-to-source breakdown voltage is -30V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:2.04V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7416TRPBF-1 IRF7456TRPBF-1 IRF7410TRPBF-1 IRF7413TRPBF-1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 12 V 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 16A (Ta) 16A (Ta) 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.8V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 5.6A, 10V 6.5mOhm @ 16A, 10V 7mOhm @ 16A, 4.5V 11mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 2.04V @ 250µA 2V @ 250µA 900mV @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 62 nC @ 5 V 91 nC @ 4.5 V 79 nC @ 10 V
Vgs (Max) ±20V ±12V ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 3640 pF @ 15 V 8676 pF @ 10 V 1800 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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