IRF7416TRPBF-1
  • Share:

Infineon Technologies IRF7416TRPBF-1

Manufacturer No:
IRF7416TRPBF-1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 10A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7416TRPBF-1 is a P-Channel MOSFET produced by Infineon Technologies. It belongs to the fifth generation of HEXFETs, which utilize advanced processing techniques to achieve high performance. This MOSFET is packaged in an SO-8 surface mount package and is designed for various power management and switching applications. Although the product is currently listed as obsolete, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Min. Typ. Max. Units
Continuous Drain Current (ID) @ TA = 25°C, VGS = -10V - - -10 A
Continuous Drain Current (ID) @ TA = 70°C, VGS = -10V - - -7.1 A
Pulsed Drain Current (IDM) - - -45 A
Power Dissipation (PD) @ TA = 25°C - - 2.5 W
Gate-to-Source Voltage (VGS) - - ±20 V
Drain-to-Source Breakdown Voltage (V(BR)DSS) -30 - - V
Gate Threshold Voltage (VGS(th)) -1.0 - -2.04 V
Forward Transconductance (gfs) 5.6 - - S
Operating Junction Temperature (TJ) -55 - 150 °C
Junction-to-Ambient Thermal Resistance (RθJA) - - 50 °C/W

Key Features

  • Advanced Processing Techniques: The IRF7416TRPBF-1 utilizes fifth-generation HEXFET technology, ensuring high performance and reliability.
  • P-Channel MOSFET: This device is a P-Channel MOSFET, suitable for applications requiring high current and low on-resistance.
  • SO-8 Package: It is packaged in an SO-8 surface mount package, which is compact and suitable for a variety of board designs.
  • High Current Capability: The MOSFET can handle continuous drain currents up to 10A at 25°C and pulsed drain currents up to 45A.
  • Low On-Resistance: The device features low on-resistance, making it efficient for power management and switching applications.
  • Wide Operating Temperature Range: It operates over a junction temperature range of -55°C to 150°C, making it versatile for various environments.

Applications

  • Power Management: Suitable for power management in DC-DC converters, power supplies, and other high-current applications.
  • Switching Applications: Ideal for switching circuits, motor control, and other applications requiring high current and low on-resistance.
  • Automotive Systems: Can be used in automotive systems for power management and control due to its robust thermal performance.
  • Industrial Control Systems: Applicable in industrial control systems, such as motor drives and power inverters.

Q & A

  1. What is the continuous drain current of the IRF7416TRPBF-1 at 25°C?

    The continuous drain current is up to 10A at 25°C with VGS = -10V.

  2. What is the maximum gate-to-source voltage for the IRF7416TRPBF-1?

    The maximum gate-to-source voltage is ±20V.

  3. What is the package type of the IRF7416TRPBF-1?

    The package type is SO-8 surface mount.

  4. What is the operating junction temperature range of the IRF7416TRPBF-1?

    The operating junction temperature range is -55°C to 150°C.

  5. Is the IRF7416TRPBF-1 still in production?

    No, the IRF7416TRPBF-1 is currently listed as obsolete.

  6. What is the maximum power dissipation of the IRF7416TRPBF-1 at 25°C?

    The maximum power dissipation is 2.5W at 25°C.

  7. What is the typical forward transconductance of the IRF7416TRPBF-1?

    The typical forward transconductance is 5.6S.

  8. What are some common applications for the IRF7416TRPBF-1?

    Common applications include power management, switching circuits, automotive systems, and industrial control systems.

  9. What is the junction-to-ambient thermal resistance of the IRF7416TRPBF-1?

    The junction-to-ambient thermal resistance is 50°C/W.

  10. What is the drain-to-source breakdown voltage of the IRF7416TRPBF-1?

    The drain-to-source breakdown voltage is -30V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:2.04V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
330

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number IRF7416TRPBF-1 IRF7456TRPBF-1 IRF7410TRPBF-1 IRF7413TRPBF-1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 12 V 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 16A (Ta) 16A (Ta) 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.8V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 5.6A, 10V 6.5mOhm @ 16A, 10V 7mOhm @ 16A, 4.5V 11mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 2.04V @ 250µA 2V @ 250µA 900mV @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 62 nC @ 5 V 91 nC @ 4.5 V 79 nC @ 10 V
Vgs (Max) ±20V ±12V ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 3640 pF @ 15 V 8676 pF @ 10 V 1800 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BAT5405E6327HTSA1
BAT5405E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC847SH6730XTMA1
BC847SH6730XTMA1
Infineon Technologies
TRANSISTOR NPN DUAL SOT363
MMBTA56LT1HTSA1
MMBTA56LT1HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23
BCP6925E6327HTSA1
BCP6925E6327HTSA1
Infineon Technologies
TRANS PNP 20V 1A SOT223-4
IRFP064NPBF
IRFP064NPBF
Infineon Technologies
MOSFET N-CH 55V 110A TO247AC
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
BSS123 E6433
BSS123 E6433
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
SAK-TC1796-256F150E BE
SAK-TC1796-256F150E BE
Infineon Technologies
IC MCU 32BIT 2MB FLASH 416BGA
CY7C68013A-128AXC
CY7C68013A-128AXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 128LQFP