IRF7416TRPBF-1
  • Share:

Infineon Technologies IRF7416TRPBF-1

Manufacturer No:
IRF7416TRPBF-1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 10A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7416TRPBF-1 is a P-Channel MOSFET produced by Infineon Technologies. It belongs to the fifth generation of HEXFETs, which utilize advanced processing techniques to achieve high performance. This MOSFET is packaged in an SO-8 surface mount package and is designed for various power management and switching applications. Although the product is currently listed as obsolete, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Min. Typ. Max. Units
Continuous Drain Current (ID) @ TA = 25°C, VGS = -10V - - -10 A
Continuous Drain Current (ID) @ TA = 70°C, VGS = -10V - - -7.1 A
Pulsed Drain Current (IDM) - - -45 A
Power Dissipation (PD) @ TA = 25°C - - 2.5 W
Gate-to-Source Voltage (VGS) - - ±20 V
Drain-to-Source Breakdown Voltage (V(BR)DSS) -30 - - V
Gate Threshold Voltage (VGS(th)) -1.0 - -2.04 V
Forward Transconductance (gfs) 5.6 - - S
Operating Junction Temperature (TJ) -55 - 150 °C
Junction-to-Ambient Thermal Resistance (RθJA) - - 50 °C/W

Key Features

  • Advanced Processing Techniques: The IRF7416TRPBF-1 utilizes fifth-generation HEXFET technology, ensuring high performance and reliability.
  • P-Channel MOSFET: This device is a P-Channel MOSFET, suitable for applications requiring high current and low on-resistance.
  • SO-8 Package: It is packaged in an SO-8 surface mount package, which is compact and suitable for a variety of board designs.
  • High Current Capability: The MOSFET can handle continuous drain currents up to 10A at 25°C and pulsed drain currents up to 45A.
  • Low On-Resistance: The device features low on-resistance, making it efficient for power management and switching applications.
  • Wide Operating Temperature Range: It operates over a junction temperature range of -55°C to 150°C, making it versatile for various environments.

Applications

  • Power Management: Suitable for power management in DC-DC converters, power supplies, and other high-current applications.
  • Switching Applications: Ideal for switching circuits, motor control, and other applications requiring high current and low on-resistance.
  • Automotive Systems: Can be used in automotive systems for power management and control due to its robust thermal performance.
  • Industrial Control Systems: Applicable in industrial control systems, such as motor drives and power inverters.

Q & A

  1. What is the continuous drain current of the IRF7416TRPBF-1 at 25°C?

    The continuous drain current is up to 10A at 25°C with VGS = -10V.

  2. What is the maximum gate-to-source voltage for the IRF7416TRPBF-1?

    The maximum gate-to-source voltage is ±20V.

  3. What is the package type of the IRF7416TRPBF-1?

    The package type is SO-8 surface mount.

  4. What is the operating junction temperature range of the IRF7416TRPBF-1?

    The operating junction temperature range is -55°C to 150°C.

  5. Is the IRF7416TRPBF-1 still in production?

    No, the IRF7416TRPBF-1 is currently listed as obsolete.

  6. What is the maximum power dissipation of the IRF7416TRPBF-1 at 25°C?

    The maximum power dissipation is 2.5W at 25°C.

  7. What is the typical forward transconductance of the IRF7416TRPBF-1?

    The typical forward transconductance is 5.6S.

  8. What are some common applications for the IRF7416TRPBF-1?

    Common applications include power management, switching circuits, automotive systems, and industrial control systems.

  9. What is the junction-to-ambient thermal resistance of the IRF7416TRPBF-1?

    The junction-to-ambient thermal resistance is 50°C/W.

  10. What is the drain-to-source breakdown voltage of the IRF7416TRPBF-1?

    The drain-to-source breakdown voltage is -30V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:2.04V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
330

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number IRF7416TRPBF-1 IRF7456TRPBF-1 IRF7410TRPBF-1 IRF7413TRPBF-1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 12 V 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 16A (Ta) 16A (Ta) 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.8V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 5.6A, 10V 6.5mOhm @ 16A, 10V 7mOhm @ 16A, 4.5V 11mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 2.04V @ 250µA 2V @ 250µA 900mV @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 62 nC @ 5 V 91 nC @ 4.5 V 79 nC @ 10 V
Vgs (Max) ±20V ±12V ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 3640 pF @ 15 V 8676 pF @ 10 V 1800 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV99SH6327XTSA1
BAV99SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAS16E6393HTSA1
BAS16E6393HTSA1
Infineon Technologies
DIODE GP 80V 250MA SOT23-3
BC807-40E6433
BC807-40E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BCV47E6327HTSA1
BCV47E6327HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BCP5316H6327XTSA1
BCP5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BC 856BW E6433
BC 856BW E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC 807-40W H6433
BC 807-40W H6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
IKW50N60TA
IKW50N60TA
Infineon Technologies
IKW50N60 - AUTOMOTIVE IGBT DISCR
TLD5098ELXUMA1
TLD5098ELXUMA1
Infineon Technologies
IC LED DRIVER CTRLR PWM 14SSOP