IPD60R180P7SAUMA1
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Infineon Technologies IPD60R180P7SAUMA1

Manufacturer No:
IPD60R180P7SAUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 18A TO252-3
Delivery:
Payment:
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Product Introduction

Overview

The IPD60R180P7SAUMA1 is a 600V CoolMOS™ P7 superjunction (SJ) MOSFET produced by Infineon Technologies. This component is the successor to the 600V CoolMOS™ P6 series and is designed to balance high energy efficiency with ease of use in the design process. The CoolMOS™ 7th generation platform ensures high efficiency through its best-in-class RDS(on) and inherently low gate charge (QG).

Key Specifications

Parameter Value Unit
Manufacturer Part Number IPD60R180P7S
Package Name PG-TO252-3 (DPAK)
Drain-Source Breakdown Voltage (VDS) 600 V
Drain-Source On Resistance (RDS(on)) 0.18 Ω
Continuous Drain Current (ID) 18 A
Pulsed Drain Current (IDM) 53 A
Operating Temperature Range -40 to 150 °C
Avalanche Energy Rating (EAS) 56 mJ
ESD Ruggedness ≥ 2kV (HBM class 2)

Key Features

  • Efficiency: Excellent Figure of Merit (FOM) with low RDS(on) and QG, enabling higher efficiency in switching applications.
  • Ease-of-use: Integrated gate resistor (RG) reduces MOSFET oscillation sensitivity, and the component is suitable for both hard and soft switching topologies such as PFC and LLC.
  • Robustness: ESD ruggedness of ≥ 2kV (HBM class 2) and an outstanding robustness of the body diode against hard commutation.
  • Package Options: Available in both through-hole and surface mount packages, with standard and industrial grade parts.

Applications

  • TV power supply
  • Industrial SMPS
  • Server power supplies
  • Telecom power supplies
  • Lighting systems

Q & A

  1. What is the drain-source breakdown voltage of the IPD60R180P7SAUMA1 MOSFET?

    The drain-source breakdown voltage is 600 V.

  2. What is the maximum drain-source on resistance (RDS(on)) of this MOSFET?

    The maximum RDS(on) is 0.18 Ω.

  3. What is the continuous drain current (ID) rating of this component?

    The continuous drain current rating is 18 A.

  4. What is the operating temperature range for the IPD60R180P7SAUMA1?

    The operating temperature range is from -40°C to 150°C.

  5. Does the IPD60R180P7SAUMA1 have integrated ESD protection?

    Yes, it has ESD ruggedness of ≥ 2kV (HBM class 2).

  6. What types of switching topologies is this MOSFET suitable for?

    This MOSFET is suitable for both hard and soft switching topologies such as PFC and LLC.

  7. Is the IPD60R180P7SAUMA1 available in different package options?

    Yes, it is available in both through-hole and surface mount packages.

  8. What are some potential applications for the IPD60R180P7SAUMA1 MOSFET?

    Potential applications include TV power supply, industrial SMPS, server power supplies, telecom power supplies, and lighting systems.

  9. Does the IPD60R180P7SAUMA1 have a built-in diode?

    Yes, it has a built-in body diode with excellent ruggedness against hard commutation.

  10. Is the IPD60R180P7SAUMA1 RoHS compliant?

    Yes, the component is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1081 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):72W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD60R180P7SAUMA1 IPD60R280P7SAUMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V 280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V 761 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 72W (Tc) 53W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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