BCX53E6327HTSA1
  • Share:

Infineon Technologies BCX53E6327HTSA1

Manufacturer No:
BCX53E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX53E6327HTSA1 is a high-performance bipolar junction transistor (BJT) manufactured by Infineon Technologies. This PNP transistor is designed for a wide range of applications requiring high current and voltage handling capabilities. It features a surface mount package (PG-SOT89) and is known for its reliability and efficiency in various electronic circuits.

Key Specifications

ParameterValue
Transistor TypePNP
Collector-Emitter Voltage (Vce)80 V
Collector Current (Ic)1 A
Transition Frequency125 MHz
Power Dissipation2 W
Operating Temperature (TJ)150°C
Mounting TypeSurface Mount
Package / CasePG-SOT89
Vce Saturation (Max) @ Ib, Ic500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150 mA, 2 V
Collector Cutoff Current (ICBO)100 nA

Key Features

  • High collector current of 1 A and collector-emitter voltage of 80 V, making it suitable for high-power applications.
  • Transition frequency of 125 MHz, which is ideal for high-frequency circuits.
  • Low Vce saturation voltage of 500 mV at specified currents, reducing power losses.
  • High DC current gain (hFE) of 100 at 150 mA and 2 V, ensuring reliable amplification.
  • Surface mount package (PG-SOT89) for easy integration into modern PCB designs.
  • Operating temperature up to 150°C, enhancing reliability in harsh environments.

Applications

The BCX53E6327HTSA1 is versatile and can be used in a variety of applications, including:

  • Power amplifiers and switching circuits due to its high current and voltage handling capabilities.
  • High-frequency circuits such as radio frequency (RF) amplifiers and oscillators.
  • Automotive and industrial control systems where reliability and high temperature operation are critical.
  • Audio amplifiers and other high-power audio equipment.

Q & A

  1. What is the collector-emitter voltage rating of the BCX53E6327HTSA1?
    The collector-emitter voltage rating is 80 V.
  2. What is the maximum collector current of the BCX53E6327HTSA1?
    The maximum collector current is 1 A.
  3. What is the transition frequency of the BCX53E6327HTSA1?
    The transition frequency is 125 MHz.
  4. What is the power dissipation of the BCX53E6327HTSA1?
    The power dissipation is 2 W.
  5. What is the operating temperature range of the BCX53E6327HTSA1?
    The operating temperature range is up to 150°C (TJ).
  6. What type of package does the BCX53E6327HTSA1 use?
    The BCX53E6327HTSA1 uses a surface mount package (PG-SOT89).
  7. What is the Vce saturation voltage of the BCX53E6327HTSA1?
    The Vce saturation voltage is 500 mV at specified currents.
  8. What is the DC current gain (hFE) of the BCX53E6327HTSA1?
    The DC current gain (hFE) is 100 at 150 mA and 2 V.
  9. What is the collector cutoff current (ICBO) of the BCX53E6327HTSA1?
    The collector cutoff current (ICBO) is 100 nA.
  10. In what types of applications is the BCX53E6327HTSA1 commonly used?
    The BCX53E6327HTSA1 is commonly used in power amplifiers, high-frequency circuits, automotive and industrial control systems, and audio amplifiers.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
0 Remaining View Similar

In Stock

-
249

Please send RFQ , we will respond immediately.

Same Series
BCX5116H6433XTMA1
BCX5116H6433XTMA1
TRANS PNP 45V 1A SOT89
BCX51H6327XTSA1
BCX51H6327XTSA1
TRANS PNP 45V 1A SOT89
BCX5216H6327XTSA1
BCX5216H6327XTSA1
TRANS PNP 60V 1A SOT89
BCX5216H6433XTMA1
BCX5216H6433XTMA1
TRANS PNP 60V 1A SOT89
BCX52H6327XTSA1
BCX52H6327XTSA1
TRANS PNP 60V 1A SOT89
BCX5310H6327XTSA1
BCX5310H6327XTSA1
TRANS PNP 80V 1A SOT89
BCX5316H6433XTMA1
BCX5316H6433XTMA1
TRANS PNP 80V 1A SOT89
BCX53H6327XTSA1
BCX53H6327XTSA1
TRANS PNP 80V 1A SOT89
BCX5116H6327XTSA1
BCX5116H6327XTSA1
TRANS PNP 45V 1A SOT89
BCX5310E6327HTSA1
BCX5310E6327HTSA1
TRANS PNP 80V 1A SOT89
BCX51E6327HTSA1
BCX51E6327HTSA1
TRANS PNP 45V 1A SOT89
BCX52E6327HTSA1
BCX52E6327HTSA1
TRANS PNP 60V 1A SOT89

Similar Products

Part Number BCX53E6327HTSA1 BCX55E6327HTSA1 BCX56E6327HTSA1 BCX51E6327HTSA1 BCX52E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type PNP NPN NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 60 V 80 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 125MHz 100MHz 100MHz 125MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89

Related Product By Categories

BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BCP69TA
BCP69TA
Diodes Incorporated
TRANS PNP BIPOL 20V 1A SOT-223
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

BAS40-05WH6327
BAS40-05WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS7005E6433HTMA1
BAS7005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BAS 40-06 B5003
BAS 40-06 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BC857SH6827XTSA1
BC857SH6827XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC817-16B5003
BC817-16B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23-3
BC 846B E6327
BC 846B E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
SPW47N60C3FKSA1
SPW47N60C3FKSA1
Infineon Technologies
MOSFET N-CH 650V 47A TO247-3
IRLML2402TRPBF
IRLML2402TRPBF
Infineon Technologies
MOSFET N-CH 20V 1.2A SOT23
BSS123L7874XT
BSS123L7874XT
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
IKW50N60TAFKSA1
IKW50N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
IRS44273LTRPBF
IRS44273LTRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE SOT23-5