BCX53E6327HTSA1
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Infineon Technologies BCX53E6327HTSA1

Manufacturer No:
BCX53E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX53E6327HTSA1 is a high-performance bipolar junction transistor (BJT) manufactured by Infineon Technologies. This PNP transistor is designed for a wide range of applications requiring high current and voltage handling capabilities. It features a surface mount package (PG-SOT89) and is known for its reliability and efficiency in various electronic circuits.

Key Specifications

ParameterValue
Transistor TypePNP
Collector-Emitter Voltage (Vce)80 V
Collector Current (Ic)1 A
Transition Frequency125 MHz
Power Dissipation2 W
Operating Temperature (TJ)150°C
Mounting TypeSurface Mount
Package / CasePG-SOT89
Vce Saturation (Max) @ Ib, Ic500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150 mA, 2 V
Collector Cutoff Current (ICBO)100 nA

Key Features

  • High collector current of 1 A and collector-emitter voltage of 80 V, making it suitable for high-power applications.
  • Transition frequency of 125 MHz, which is ideal for high-frequency circuits.
  • Low Vce saturation voltage of 500 mV at specified currents, reducing power losses.
  • High DC current gain (hFE) of 100 at 150 mA and 2 V, ensuring reliable amplification.
  • Surface mount package (PG-SOT89) for easy integration into modern PCB designs.
  • Operating temperature up to 150°C, enhancing reliability in harsh environments.

Applications

The BCX53E6327HTSA1 is versatile and can be used in a variety of applications, including:

  • Power amplifiers and switching circuits due to its high current and voltage handling capabilities.
  • High-frequency circuits such as radio frequency (RF) amplifiers and oscillators.
  • Automotive and industrial control systems where reliability and high temperature operation are critical.
  • Audio amplifiers and other high-power audio equipment.

Q & A

  1. What is the collector-emitter voltage rating of the BCX53E6327HTSA1?
    The collector-emitter voltage rating is 80 V.
  2. What is the maximum collector current of the BCX53E6327HTSA1?
    The maximum collector current is 1 A.
  3. What is the transition frequency of the BCX53E6327HTSA1?
    The transition frequency is 125 MHz.
  4. What is the power dissipation of the BCX53E6327HTSA1?
    The power dissipation is 2 W.
  5. What is the operating temperature range of the BCX53E6327HTSA1?
    The operating temperature range is up to 150°C (TJ).
  6. What type of package does the BCX53E6327HTSA1 use?
    The BCX53E6327HTSA1 uses a surface mount package (PG-SOT89).
  7. What is the Vce saturation voltage of the BCX53E6327HTSA1?
    The Vce saturation voltage is 500 mV at specified currents.
  8. What is the DC current gain (hFE) of the BCX53E6327HTSA1?
    The DC current gain (hFE) is 100 at 150 mA and 2 V.
  9. What is the collector cutoff current (ICBO) of the BCX53E6327HTSA1?
    The collector cutoff current (ICBO) is 100 nA.
  10. In what types of applications is the BCX53E6327HTSA1 commonly used?
    The BCX53E6327HTSA1 is commonly used in power amplifiers, high-frequency circuits, automotive and industrial control systems, and audio amplifiers.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
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Similar Products

Part Number BCX53E6327HTSA1 BCX55E6327HTSA1 BCX56E6327HTSA1 BCX51E6327HTSA1 BCX52E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type PNP NPN NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 60 V 80 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 125MHz 100MHz 100MHz 125MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89

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