BSS123L7874XT
  • Share:

Infineon Technologies BSS123L7874XT

Manufacturer No:
BSS123L7874XT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123L7874XT is an N-Channel Small Signal MOSFET produced by Infineon Technologies. This component is part of Infineon's broad portfolio of N and P-Channel Small Signal MOSFETs, known for their high quality and reliability. The BSS123L7874XT is packaged in a SOT23 package, making it suitable for a variety of applications where space is limited.

It is designed to meet the highest industry standards, including automotive and industrial requirements, ensuring robust performance and durability. The MOSFET is enhancement mode, logic level, and avalanche rated, making it versatile for different use cases.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage Continuous VGSS ±20 V
Continuous Drain Current ID 0.17 A
Pulsed Drain Current IDM 0.68 A
Maximum Power Dissipation PD 360 mW
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Gate Threshold Voltage VGS(TH) 0.8 to 2.0 V
Static Drain-Source On-Resistance RDS(ON) 3.2 to 6.0 Ω

Key Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable
  • Low RDS(on) for higher efficiency and extended battery life
  • Small package saves PCB space
  • Best-in-class quality and reliability

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch Mode Power Supplies (SMPS)
  • Motor control

Q & A

  1. What is the maximum drain-source voltage of the BSS123L7874XT?

    The maximum drain-source voltage (VDSS) is 100 V.

  2. What is the continuous drain current rating of the BSS123L7874XT?

    The continuous drain current (ID) is 0.17 A.

  3. What is the thermal resistance, junction to ambient, of the BSS123L7874XT?

    The thermal resistance, junction to ambient (RθJA), is 417 °C/W.

  4. Is the BSS123L7874XT RoHS compliant and halogen-free?
  5. What are the operating and storage temperature ranges for the BSS123L7874XT?

    The operating and storage temperature range is -55 to +150 °C.

  6. What is the gate threshold voltage range of the BSS123L7874XT?

    The gate threshold voltage (VGS(TH)) range is 0.8 to 2.0 V.

  7. What are some typical applications of the BSS123L7874XT?

    Typical applications include LED lighting, ADAS, body control units, SMPS, and motor control.

  8. Is the BSS123L7874XT qualified according to automotive standards?
  9. What is the benefit of the low RDS(on) in the BSS123L7874XT?

    The low RDS(on) provides higher efficiency and extends battery life.

  10. What package type is the BSS123L7874XT available in?

    The BSS123L7874XT is available in a SOT23 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
62

Please send RFQ , we will respond immediately.

Same Series
BSS123 E6433
BSS123 E6433
MOSFET N-CH 100V 170MA SOT23-3
BSS123L7874XT
BSS123L7874XT
MOSFET N-CH 100V 170MA SOT23-3
BSS123L6327HTSA1
BSS123L6327HTSA1
MOSFET N-CH 100V 170MA SOT23-3
BSS123L6433HTMA1
BSS123L6433HTMA1
MOSFET N-CH 100V 170MA SOT23-3

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Brand

BAS 16U E6327
BAS 16U E6327
Infineon Technologies
RECTIFIER DIODE
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BC846SH6727XTSA1
BC846SH6727XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BCV62BE6433HTMA1
BCV62BE6433HTMA1
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
BSS138NL6433HTMA1
BSS138NL6433HTMA1
Infineon Technologies
MOSFET N-CH 60V 230MA SOT23-3
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW