BSS123L7874XT
  • Share:

Infineon Technologies BSS123L7874XT

Manufacturer No:
BSS123L7874XT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123L7874XT is an N-Channel Small Signal MOSFET produced by Infineon Technologies. This component is part of Infineon's broad portfolio of N and P-Channel Small Signal MOSFETs, known for their high quality and reliability. The BSS123L7874XT is packaged in a SOT23 package, making it suitable for a variety of applications where space is limited.

It is designed to meet the highest industry standards, including automotive and industrial requirements, ensuring robust performance and durability. The MOSFET is enhancement mode, logic level, and avalanche rated, making it versatile for different use cases.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage Continuous VGSS ±20 V
Continuous Drain Current ID 0.17 A
Pulsed Drain Current IDM 0.68 A
Maximum Power Dissipation PD 360 mW
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Gate Threshold Voltage VGS(TH) 0.8 to 2.0 V
Static Drain-Source On-Resistance RDS(ON) 3.2 to 6.0 Ω

Key Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable
  • Low RDS(on) for higher efficiency and extended battery life
  • Small package saves PCB space
  • Best-in-class quality and reliability

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch Mode Power Supplies (SMPS)
  • Motor control

Q & A

  1. What is the maximum drain-source voltage of the BSS123L7874XT?

    The maximum drain-source voltage (VDSS) is 100 V.

  2. What is the continuous drain current rating of the BSS123L7874XT?

    The continuous drain current (ID) is 0.17 A.

  3. What is the thermal resistance, junction to ambient, of the BSS123L7874XT?

    The thermal resistance, junction to ambient (RθJA), is 417 °C/W.

  4. Is the BSS123L7874XT RoHS compliant and halogen-free?
  5. What are the operating and storage temperature ranges for the BSS123L7874XT?

    The operating and storage temperature range is -55 to +150 °C.

  6. What is the gate threshold voltage range of the BSS123L7874XT?

    The gate threshold voltage (VGS(TH)) range is 0.8 to 2.0 V.

  7. What are some typical applications of the BSS123L7874XT?

    Typical applications include LED lighting, ADAS, body control units, SMPS, and motor control.

  8. Is the BSS123L7874XT qualified according to automotive standards?
  9. What is the benefit of the low RDS(on) in the BSS123L7874XT?

    The low RDS(on) provides higher efficiency and extends battery life.

  10. What package type is the BSS123L7874XT available in?

    The BSS123L7874XT is available in a SOT23 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
62

Please send RFQ , we will respond immediately.

Same Series
BSS123 E6433
BSS123 E6433
MOSFET N-CH 100V 170MA SOT23-3
BSS123L7874XT
BSS123L7874XT
MOSFET N-CH 100V 170MA SOT23-3
BSS123L6327HTSA1
BSS123L6327HTSA1
MOSFET N-CH 100V 170MA SOT23-3
BSS123L6433HTMA1
BSS123L6433HTMA1
MOSFET N-CH 100V 170MA SOT23-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

BAS70-04B5000
BAS70-04B5000
Infineon Technologies
SCHOTTKY DIODE
BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAS 40-04 B5003
BAS 40-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BCX5316H6433XTMA1
BCX5316H6433XTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC 807-25 E6327
BC 807-25 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BCX 54-16 E6327
BCX 54-16 E6327
Infineon Technologies
TRANS NPN 45V 1A SOT89
BC 807-40W H6433
BC 807-40W H6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
IRF7410TRPBF
IRF7410TRPBF
Infineon Technologies
MOSFET P-CH 12V 16A 8SO