BSS123L6433HTMA1
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Infineon Technologies BSS123L6433HTMA1

Manufacturer No:
BSS123L6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS123L6433HTMA1 is a small-signal N-channel MOSFET produced by Infineon Technologies. This enhancement mode MOSFET is designed for logic level applications, offering a low threshold voltage and high switching speeds. It is part of the SIPMOS family, known for its reliability and performance in various electronic circuits.

Key Specifications

ParameterSymbolValueUnit
Drain-Source VoltageVDSS100Vdc
Gate-Source Voltage (Continuous)VGSM±20Vdc
Gate-Source Voltage (Non-repetitive, tp ≤ 50 μs)VGSM±40Vdc
Continuous Drain CurrentID0.17A
Pulsed Drain CurrentIDM0.68A
Gate Threshold VoltageVGS(th)0.8 - 2.0Vdc
Junction and Storage TemperatureTJ, Tstg-55 to +150°C

Key Features

  • Enhancement mode N-channel MOSFET
  • Logic level threshold voltage (VGS(th) = 0.8 - 2.0 V)
  • High switching speeds
  • Low on-resistance
  • Pb-free and RoHS compliant
  • SIPMOS small-signal transistor

Applications

The BSS123L6433HTMA1 is suitable for a variety of applications including logic circuits, switching circuits, and general-purpose small-signal amplification. It is particularly useful in scenarios requiring low power consumption and high reliability.

Q & A

  1. What is the drain-source voltage rating of the BSS123L6433HTMA1?
    The drain-source voltage rating is 100 Vdc.
  2. What is the continuous drain current of the BSS123L6433HTMA1?
    The continuous drain current is 0.17 A.
  3. What is the gate threshold voltage range of the BSS123L6433HTMA1?
    The gate threshold voltage range is 0.8 - 2.0 Vdc.
  4. Is the BSS123L6433HTMA1 Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  5. What is the junction and storage temperature range of the BSS123L6433HTMA1?
    The junction and storage temperature range is -55 to +150 °C.
  6. What type of MOSFET is the BSS123L6433HTMA1?
    The BSS123L6433HTMA1 is an enhancement mode N-channel MOSFET.
  7. What are some common applications of the BSS123L6433HTMA1?
    Common applications include logic circuits, switching circuits, and general-purpose small-signal amplification.
  8. What family does the BSS123L6433HTMA1 belong to?
    The BSS123L6433HTMA1 belongs to the SIPMOS family.
  9. What is the pulsed drain current rating of the BSS123L6433HTMA1?
    The pulsed drain current rating is 0.68 A.
  10. What is the gate-source voltage rating for continuous operation?
    The gate-source voltage rating for continuous operation is ±20 Vdc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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