BSS123L6433HTMA1
  • Share:

Infineon Technologies BSS123L6433HTMA1

Manufacturer No:
BSS123L6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123L6433HTMA1 is a small-signal N-channel MOSFET produced by Infineon Technologies. This enhancement mode MOSFET is designed for logic level applications, offering a low threshold voltage and high switching speeds. It is part of the SIPMOS family, known for its reliability and performance in various electronic circuits.

Key Specifications

ParameterSymbolValueUnit
Drain-Source VoltageVDSS100Vdc
Gate-Source Voltage (Continuous)VGSM±20Vdc
Gate-Source Voltage (Non-repetitive, tp ≤ 50 μs)VGSM±40Vdc
Continuous Drain CurrentID0.17A
Pulsed Drain CurrentIDM0.68A
Gate Threshold VoltageVGS(th)0.8 - 2.0Vdc
Junction and Storage TemperatureTJ, Tstg-55 to +150°C

Key Features

  • Enhancement mode N-channel MOSFET
  • Logic level threshold voltage (VGS(th) = 0.8 - 2.0 V)
  • High switching speeds
  • Low on-resistance
  • Pb-free and RoHS compliant
  • SIPMOS small-signal transistor

Applications

The BSS123L6433HTMA1 is suitable for a variety of applications including logic circuits, switching circuits, and general-purpose small-signal amplification. It is particularly useful in scenarios requiring low power consumption and high reliability.

Q & A

  1. What is the drain-source voltage rating of the BSS123L6433HTMA1?
    The drain-source voltage rating is 100 Vdc.
  2. What is the continuous drain current of the BSS123L6433HTMA1?
    The continuous drain current is 0.17 A.
  3. What is the gate threshold voltage range of the BSS123L6433HTMA1?
    The gate threshold voltage range is 0.8 - 2.0 Vdc.
  4. Is the BSS123L6433HTMA1 Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  5. What is the junction and storage temperature range of the BSS123L6433HTMA1?
    The junction and storage temperature range is -55 to +150 °C.
  6. What type of MOSFET is the BSS123L6433HTMA1?
    The BSS123L6433HTMA1 is an enhancement mode N-channel MOSFET.
  7. What are some common applications of the BSS123L6433HTMA1?
    Common applications include logic circuits, switching circuits, and general-purpose small-signal amplification.
  8. What family does the BSS123L6433HTMA1 belong to?
    The BSS123L6433HTMA1 belongs to the SIPMOS family.
  9. What is the pulsed drain current rating of the BSS123L6433HTMA1?
    The pulsed drain current rating is 0.68 A.
  10. What is the gate-source voltage rating for continuous operation?
    The gate-source voltage rating for continuous operation is ±20 Vdc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
50

Please send RFQ , we will respond immediately.

Same Series
BSS123 E6433
BSS123 E6433
MOSFET N-CH 100V 170MA SOT23-3
BSS123L7874XT
BSS123L7874XT
MOSFET N-CH 100V 170MA SOT23-3
BSS123L6327HTSA1
BSS123L6327HTSA1
MOSFET N-CH 100V 170MA SOT23-3
BSS123L6433HTMA1
BSS123L6433HTMA1
MOSFET N-CH 100V 170MA SOT23-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAS40-06WE6327
BAS40-06WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BAL74E6327HTSA1
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
BC848B-E6327
BC848B-E6327
Infineon Technologies
TRANS NPN 30V 0.1A SOT23
BC 807-25 B5003
BC 807-25 B5003
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
IRF4905STRLPBF
IRF4905STRLPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
IKW75N65ES5XKSA1
IKW75N65ES5XKSA1
Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA