Overview
The IRF540NLPBF is a 100V Single N-Channel Power MOSFET produced by Infineon Technologies. It is part of the HEXFET® family, which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This MOSFET is available in a TO-262 (D2PAK) package, making it suitable for high-current applications due to its low internal connection resistance and high power dissipation capability.
The device is optimized for a wide range of applications, including DC motors, inverters, SMPS (Switch-Mode Power Supplies), lighting, load switches, and battery-powered applications. Its industry-standard package and pin-out allow for easy design and drop-in replacement in various systems.
Key Specifications
| Parameter | Min. | Typ. | Max. | Units | Conditions |
|---|---|---|---|---|---|
| VDSS (Drain-to-Source Breakdown Voltage) | - | - | 100 | V | VGS = 0V, ID = 250µA |
| VGS (Gate-to-Source Voltage) | - | - | ±20 | V | - |
| ID (Continuous Drain Current at TC = 25°C) | - | - | 33 | A | VGS = 10V |
| ID (Continuous Drain Current at TC = 100°C) | - | - | 23 | A | VGS = 10V |
| IDM (Pulsed Drain Current) | - | - | 110 | A | - |
| PD (Power Dissipation at TC = 25°C) | - | - | 130 | W | - |
| RDS(on) (Drain-Source On-State Resistance) | - | - | 44mΩ | - | VGS = 10V, ID = 16A |
| TJ (Operating Junction Temperature) | -55 | - | 175 | °C | - |
| TSTG (Storage Temperature Range) | -55 | - | 175 | °C | - |
Key Features
- Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
- Ultra Low On-Resistance: With a maximum RDS(on) of 44mΩ at VGS = 10V and ID = 16A.
- Dynamic dv/dt Rating: Ensures robust performance under dynamic voltage conditions.
- 175°C Operating Temperature: Allows for operation in high-temperature environments.
- Fast Switching: Features fast switching speeds with rise and fall times of 35ns each.
- Fully Avalanche Rated: Provides protection against avalanche conditions.
- Lead-Free: Compliant with RoHS standards.
- High-Current Rating: Supports continuous drain current of up to 33A at TC = 25°C.
- Industry Standard Package: Available in TO-262 (D2PAK) package, suitable for high-current applications.
Applications
The IRF540NLPBF is designed for a wide variety of applications, including:
- DC Motors
- Inverters
- Switch-Mode Power Supplies (SMPS)
- Lighting Systems
- Load Switches
- Battery-Powered Applications
The device's robust design and low on-resistance make it particularly suitable for high-power and high-frequency applications.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the IRF540NLPBF?
The maximum drain-to-source voltage (VDSS) is 100V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 33A.
- What is the maximum gate-to-source voltage (VGS)?
The maximum gate-to-source voltage (VGS) is ±20V.
- What is the typical on-resistance (RDS(on)) of the IRF540NLPBF?
The typical on-resistance (RDS(on)) is 44mΩ at VGS = 10V and ID = 16A.
- What is the operating junction temperature range of the IRF540NLPBF?
The operating junction temperature range is -55°C to +175°C.
- Is the IRF540NLPBF lead-free?
- What package type is the IRF540NLPBF available in?
The IRF540NLPBF is available in the TO-262 (D2PAK) package.
- What are some typical applications for the IRF540NLPBF?
Typical applications include DC motors, inverters, SMPS, lighting systems, load switches, and battery-powered applications.
- What is the maximum power dissipation (PD) of the IRF540NLPBF at TC = 25°C?
The maximum power dissipation (PD) at TC = 25°C is 130W.
- What is the gate-source threshold voltage (VGS(th)) of the IRF540NLPBF?
The gate-source threshold voltage (VGS(th)) is approximately 4V.
