BC847C-B5000
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Infineon Technologies BC847C-B5000

Manufacturer No:
BC847C-B5000
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847C-B5000 is a bipolar junction transistor (BJT) produced by Infineon Technologies. It belongs to the BC847 series, which is known for its high current gain and low collector-emitter saturation voltage, making it suitable for various audio frequency (AF) applications, including input stages and driver circuits. This transistor is part of a family that includes complementary PNP types (BC857-BC860 series) and is available in Pb-free (RoHS compliant) packages.

Key Specifications

ParameterSymbolMinTypMaxUnit
Collector-Emitter Breakdown VoltageV(BR)CEO45--V
Collector-Base Breakdown VoltageV(BR)CBO50--V
Emitter-Base Breakdown VoltageV(BR)EBO--6V
Base-Emitter VoltageVBE(ON)580-700mV
DC Current Gain (hFE)hFE200-420-
Collector-Emitter Saturation VoltageVCE(sat)--0.6V
Base-Emitter Saturation VoltageVBE(sat)--0.9V
Transition FrequencyfT-250-MHz
Thermal Resistance, Junction-to-AmbientRthJA--620°C/W
Total Device DissipationPD--200mW

Key Features

  • High current gain, making it suitable for AF input stages and driver applications.
  • Low collector-emitter saturation voltage, which reduces power consumption and improves efficiency.
  • Low noise characteristics between 30 Hz and 15 kHz, ideal for audio applications.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • Complementary PNP types available (BC857-BC860 series) for matching circuit designs.

Applications

The BC847C-B5000 is primarily used in audio frequency (AF) applications, including:

  • Input stages: Due to its high current gain and low noise characteristics, it is ideal for amplifying weak audio signals.
  • Driver circuits: It can drive other components or stages in audio systems efficiently.
  • General-purpose amplification: Suitable for various amplification tasks where high gain and low saturation voltage are required.

Q & A

  1. What is the BC847C-B5000 used for? The BC847C-B5000 is used in audio frequency (AF) applications, including input stages and driver circuits, due to its high current gain and low noise characteristics.
  2. What is the collector-emitter breakdown voltage of the BC847C-B5000? The collector-emitter breakdown voltage (V(BR)CEO) is 45 V.
  3. What is the typical DC current gain (hFE) of the BC847C-B5000? The typical DC current gain (hFE) is between 200 and 420.
  4. Is the BC847C-B5000 RoHS compliant? Yes, the BC847C-B5000 is available in Pb-free (RoHS compliant) packages.
  5. What is the transition frequency (fT) of the BC847C-B5000? The transition frequency (fT) is typically 250 MHz.
  6. What is the thermal resistance, junction-to-ambient (RthJA), of the BC847C-B5000? The thermal resistance, junction-to-ambient (RthJA), is 620 °C/W.
  7. What is the total device dissipation (PD) of the BC847C-B5000? The total device dissipation (PD) is 200 mW.
  8. Are there complementary PNP types available for the BC847C-B5000? Yes, the BC857-BC860 series are the complementary PNP types.
  9. What is the base-emitter saturation voltage (VBE(sat)) of the BC847C-B5000? The base-emitter saturation voltage (VBE(sat)) is typically 0.9 V.
  10. What is the collector-emitter saturation voltage (VCE(sat)) of the BC847C-B5000? The collector-emitter saturation voltage (VCE(sat)) is typically 0.6 V.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC847C-B5000 BC847CB5000
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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