Overview
The BUL128D-B is a high-voltage, fast-switching NPN power transistor manufactured by STMicroelectronics. It is designed using high voltage Multi Epitaxial Planar technology, which ensures high switching speeds and medium voltage capability. The transistor features a Cellular Emitter structure with planar edge termination, enhancing its switching performance while maintaining a wide Reverse Bias Safe Operating Area (RBSOA). This device is particularly suited for applications in lighting and low-cost switch-mode power supplies.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCE) | 400 | V |
| Collector-Emitter Voltage (VCEO) | 700 | V |
| Emitter-Base Voltage (VEBO) | 9-18 | V |
| Collector Current (IC) | 4 | A |
| Collector Peak Current (ICM) | 8 | A |
| Base Current (IB) | 2 | A |
| Base Peak Current (IBM) | 4 | A |
| Total Dissipation at TC = 25°C (Ptot) | 70 | W |
| Storage Temperature (Tstg) | -65 to 150 | °C |
| Max. Operating Junction Temperature (TJ) | 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 1.78 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- High voltage capability with VCEO of 400V and VCES of 700V
- Low spread of dynamic parameters for reliable operation
- Very high switching speed
- Integrated antiparallel collector-emitter diode
- Cellular Emitter structure with planar edge termination for enhanced switching speeds
- Wide Reverse Bias Safe Operating Area (RBSOA)
Applications
- Electronic ballast for fluorescent lighting
- Flyback and forward single transistor low power converters
- Low-cost switch-mode power supplies
Q & A
- What is the collector-emitter voltage (VCEO) of the BUL128D-B transistor?
The collector-emitter voltage (VCEO) of the BUL128D-B transistor is 400V.
- What is the maximum collector current (IC) of the BUL128D-B transistor?
The maximum collector current (IC) of the BUL128D-B transistor is 4A.
- What is the total power dissipation (Ptot) at TC = 25°C for the BUL128D-B transistor?
The total power dissipation (Ptot) at TC = 25°C for the BUL128D-B transistor is 70W.
- What is the maximum operating junction temperature (TJ) for the BUL128D-B transistor?
The maximum operating junction temperature (TJ) for the BUL128D-B transistor is 150°C.
- What type of package does the BUL128D-B transistor use?
The BUL128D-B transistor uses a TO-220 package.
- What are some common applications of the BUL128D-B transistor?
The BUL128D-B transistor is commonly used in electronic ballast for fluorescent lighting, flyback and forward single transistor low power converters, and low-cost switch-mode power supplies.
- Does the BUL128D-B transistor have an integrated antiparallel collector-emitter diode?
Yes, the BUL128D-B transistor has an integrated antiparallel collector-emitter diode.
- What technology is used to manufacture the BUL128D-B transistor?
The BUL128D-B transistor is manufactured using high voltage Multi Epitaxial Planar technology.
- What is the thermal resistance junction-case (Rthj-case) for the BUL128D-B transistor?
The thermal resistance junction-case (Rthj-case) for the BUL128D-B transistor is 1.78°C/W.
- What is the storage temperature range (Tstg) for the BUL128D-B transistor?
The storage temperature range (Tstg) for the BUL128D-B transistor is -65 to 150°C.
