MJB44H11G
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onsemi MJB44H11G

Manufacturer No:
MJB44H11G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJB44H11G is a high-performance NPN bipolar power transistor manufactured by onsemi. This transistor is designed for general-purpose power amplification and switching applications, making it suitable for various industrial and consumer electronics uses. It is packaged in a D2PAK (TO-263) surface mount configuration, which is ideal for high-power applications where space efficiency is crucial.

Key Specifications

ParameterValue
Transistor TypeNPN Bipolar Power Transistor
Collector-Emitter Voltage (Vce)80 V
Collector Current (Ic)10 A
Power Dissipation (Pd)50 W
Switching Frequency50 MHz
Package TypeD2PAK (TO-263)
Mounting TypeSurface Mount

Key Features

  • High collector current of up to 10 A, making it suitable for high-power applications.
  • Collector-emitter voltage of 80 V, providing robust performance in various power amplification and switching roles.
  • High switching frequency of 50 MHz, enabling efficient operation in high-speed applications.
  • D2PAK (TO-263) surface mount package for efficient heat dissipation and space-saving design.
  • Compliant with RoHS standards, ensuring environmental sustainability.

Applications

The MJB44H11G is versatile and can be used in a variety of applications, including:

  • Output or driver stages in power amplifiers.
  • Switching circuits in power supplies and motor control systems.
  • High-power industrial and consumer electronics.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the collector-emitter voltage of the MJB44H11G transistor?
    The collector-emitter voltage (Vce) of the MJB44H11G transistor is 80 V.
  2. What is the maximum collector current of the MJB44H11G transistor?
    The maximum collector current (Ic) of the MJB44H11G transistor is 10 A.
  3. What is the power dissipation rating of the MJB44H11G transistor?
    The power dissipation rating (Pd) of the MJB44H11G transistor is 50 W.
  4. What is the switching frequency of the MJB44H11G transistor?
    The switching frequency of the MJB44H11G transistor is up to 50 MHz.
  5. What package type is the MJB44H11G transistor available in?
    The MJB44H11G transistor is available in a D2PAK (TO-263) surface mount package.
  6. Is the MJB44H11G transistor RoHS compliant?
    Yes, the MJB44H11G transistor is RoHS compliant.
  7. What are some common applications of the MJB44H11G transistor?
    The MJB44H11G transistor is commonly used in output or driver stages, switching circuits, high-power industrial and consumer electronics, and automotive systems.
  8. How does the D2PAK package benefit the MJB44H11G transistor?
    The D2PAK package provides efficient heat dissipation and a space-saving design, making it ideal for high-power applications.
  9. Where can I find detailed specifications for the MJB44H11G transistor?
    Detailed specifications for the MJB44H11G transistor can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and LCSC.
  10. What is the typical price range for the MJB44H11G transistor?
    The typical price range for the MJB44H11G transistor is around $1.15 to $1.73, depending on the quantity and supplier.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:2 W
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
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$1.68
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Similar Products

Part Number MJB44H11G MJB45H11G MJB44H11
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 10 A 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 10µA 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 2 W 2 W 2 W
Frequency - Transition 50MHz 40MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK D²PAK D²PAK

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