MJB45H11T4G
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onsemi MJB45H11T4G

Manufacturer No:
MJB45H11T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 10A D2PAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The MJB45H11T4G is a complementary power transistor produced by onsemi, designed for general-purpose power amplification and switching applications. This PNP transistor is part of the MJB45H11 series, which includes both PNP and NPN types, offering a balanced pair for various circuit designs. The device is packaged in a D2PAK surface mount case, making it suitable for high-power applications where space efficiency is crucial.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO80Vdc
Emitter-Base VoltageVEB5Vdc
Collector Current - ContinuousIC10Adc
Collector Current - PeakIC20Adc
Total Power Dissipation @ TC = 25°CPD50W
Total Power Dissipation @ TA = 25°CPD2.0W
Operating and Storage Junction Temperature RangeTJ, Tstg-55 to 150°C
Thermal Resistance, Junction-to-CaseRθJC2.5°C/W
Thermal Resistance, Junction-to-AmbientRθJA75°C/W
Collector-Emitter Saturation VoltageVCE(sat)1.0Vdc
Base-Emitter Saturation VoltageVBE(sat)1.5Vdc
DC Current GainhFE40-60-

Key Features

  • Low Collector-Emitter Saturation Voltage (VCE(sat) = 1.0 V max @ 8.0 A)
  • Fast Switching Speeds
  • Complementary Pairs Simplify Designs
  • Epoxy Meets UL 94 V-0 @ 0.125 in
  • ESD Ratings: Human Body Model > 8000 V, Machine Model > 400 V
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-Free Packages Available

Applications

The MJB45H11T4G is suitable for a variety of applications including output or driver stages in switching regulators, converters, and power amplifiers. Its high current and voltage ratings make it ideal for high-power switching and amplification tasks.

Q & A

  1. What is the collector-emitter voltage rating of the MJB45H11T4G? The collector-emitter voltage rating is 80 Vdc.
  2. What is the maximum continuous collector current for this transistor? The maximum continuous collector current is 10 Adc.
  3. What is the thermal resistance from junction to case for this device? The thermal resistance from junction to case is 2.5 °C/W.
  4. Is the MJB45H11T4G Pb-free? Yes, the MJB45H11T4G is available in Pb-free packages.
  5. What are the ESD ratings for this transistor? The ESD ratings are > 8000 V for the Human Body Model and > 400 V for the Machine Model.
  6. What is the operating junction temperature range for this device? The operating junction temperature range is -55 to 150 °C.
  7. What are some typical applications for the MJB45H11T4G? Typical applications include output or driver stages in switching regulators, converters, and power amplifiers.
  8. Does the MJB45H11T4G meet any automotive standards? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  9. What is the collector-emitter saturation voltage for this transistor? The collector-emitter saturation voltage is 1.0 V max @ 8.0 A.
  10. What is the base-emitter saturation voltage for this transistor? The base-emitter saturation voltage is 1.5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:2 W
Frequency - Transition:40MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
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Similar Products

Part Number MJB45H11T4G MJB44H11T4G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 2 W 2 W
Frequency - Transition 40MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK D²PAK

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