Overview
The MJB45H11T4G is a complementary power transistor produced by onsemi, designed for general-purpose power amplification and switching applications. This PNP transistor is part of the MJB45H11 series, which includes both PNP and NPN types, offering a balanced pair for various circuit designs. The device is packaged in a D2PAK surface mount case, making it suitable for high-power applications where space efficiency is crucial.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current - Continuous | IC | 10 | Adc |
| Collector Current - Peak | IC | 20 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 50 | W |
| Total Power Dissipation @ TA = 25°C | PD | 2.0 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Thermal Resistance, Junction-to-Case | RθJC | 2.5 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 75 | °C/W |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.5 | Vdc |
| DC Current Gain | hFE | 40-60 | - |
Key Features
- Low Collector-Emitter Saturation Voltage (VCE(sat) = 1.0 V max @ 8.0 A)
- Fast Switching Speeds
- Complementary Pairs Simplify Designs
- Epoxy Meets UL 94 V-0 @ 0.125 in
- ESD Ratings: Human Body Model > 8000 V, Machine Model > 400 V
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free Packages Available
Applications
The MJB45H11T4G is suitable for a variety of applications including output or driver stages in switching regulators, converters, and power amplifiers. Its high current and voltage ratings make it ideal for high-power switching and amplification tasks.
Q & A
- What is the collector-emitter voltage rating of the MJB45H11T4G? The collector-emitter voltage rating is 80 Vdc.
- What is the maximum continuous collector current for this transistor? The maximum continuous collector current is 10 Adc.
- What is the thermal resistance from junction to case for this device? The thermal resistance from junction to case is 2.5 °C/W.
- Is the MJB45H11T4G Pb-free? Yes, the MJB45H11T4G is available in Pb-free packages.
- What are the ESD ratings for this transistor? The ESD ratings are > 8000 V for the Human Body Model and > 400 V for the Machine Model.
- What is the operating junction temperature range for this device? The operating junction temperature range is -55 to 150 °C.
- What are some typical applications for the MJB45H11T4G? Typical applications include output or driver stages in switching regulators, converters, and power amplifiers.
- Does the MJB45H11T4G meet any automotive standards? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the collector-emitter saturation voltage for this transistor? The collector-emitter saturation voltage is 1.0 V max @ 8.0 A.
- What is the base-emitter saturation voltage for this transistor? The base-emitter saturation voltage is 1.5 V.
