TIP30C
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NTE Electronics, Inc TIP30C

Manufacturer No:
TIP30C
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS PNP 100V 1A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP30C is a silicon PNP epitaxial-base power transistor manufactured by NTE Electronics, Inc. It is part of the TIP30 series, which includes complementary devices to the TIP29 series. This transistor is designed for use in general-purpose power amplifier and high-speed switching applications. The TIP30C is housed in a TO-220 package, making it suitable for a variety of power handling requirements.

Key Specifications

ParameterValueUnits
Collector-Base Voltage (VCBO)100V
Collector-Emitter Voltage (VCEO)100V
Emitter-Base Voltage (VEBO)5.0V
Continuous Collector Current (IC)1.0A
Peak Collector Current (ICM)3.0A
Continuous Base Current (IB)0.4A
Power Dissipation (PD)30W
Operating and Storage Junction Temperature (TJ, Tstg)-65 to +150°C
Transition Frequency (ft)3.0MHz
Forward Current Transfer Ratio (hFE)40 (min) to 75 (max)
Collector-Emitter Saturation Voltage (VCE(SAT))0.7V

Key Features

  • High Gain Performance: The TIP30C exhibits exceptional high gain performance due to its planar technology with a “Base Island” layout.
  • Low Saturation Voltage: It has a very low collector-emitter saturation voltage, making it efficient for switching and amplifier applications.
  • Compact TO-220 Package: Housed in a TO-220 package, which is suitable for various power handling needs and provides good thermal dissipation.
  • Pb-Free and RoHS Compliant: These devices are lead-free and comply with RoHS regulations, ensuring environmental safety.

Applications

The TIP30C is designed for use in general-purpose power amplifier and high-speed switching applications. It is suitable for a wide range of electronic circuits, including:

  • Power Amplifiers: Due to its high current and voltage handling capabilities, it is ideal for power amplifier circuits.
  • Switching Circuits: Its high speed switching characteristics make it suitable for various switching applications.
  • Automotive and Industrial Systems: It can be used in automotive and industrial systems where high reliability and robust performance are required.

Q & A

  1. What is the maximum collector-emitter voltage of the TIP30C?
    The maximum collector-emitter voltage (VCEO) of the TIP30C is 100 V.
  2. What is the continuous collector current rating of the TIP30C?
    The continuous collector current (IC) rating of the TIP30C is 1.0 A.
  3. What is the operating junction temperature range of the TIP30C?
    The operating and storage junction temperature range of the TIP30C is -65 to +150 °C.
  4. What is the transition frequency (ft) of the TIP30C?
    The transition frequency (ft) of the TIP30C is 3.0 MHz.
  5. Is the TIP30C Pb-Free and RoHS Compliant?
    Yes, the TIP30C is Pb-Free and RoHS Compliant.
  6. What is the typical collector-emitter saturation voltage of the TIP30C?
    The typical collector-emitter saturation voltage (VCE(SAT)) of the TIP30C is 0.7 V.
  7. What package type is the TIP30C housed in?
    The TIP30C is housed in a TO-220 package.
  8. What are the primary applications of the TIP30C?
    The primary applications of the TIP30C include general-purpose power amplifiers and high-speed switching circuits.
  9. What is the maximum power dissipation of the TIP30C?
    The maximum power dissipation (PD) of the TIP30C is 30 W.
  10. What is the forward current transfer ratio (hFE) of the TIP30C?
    The forward current transfer ratio (hFE) of the TIP30C ranges from 40 to 75.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 125mA, 1A
Current - Collector Cutoff (Max):300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 1A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number TIP30C TIP32C TIP34C TIP31C TIP35C TIP30CG TIP36C TIP33C TIP30G TIP30A TIP30B
Manufacturer NTE Electronics, Inc STMicroelectronics NTE Electronics, Inc Fairchild Semiconductor NTE Electronics, Inc onsemi STMicroelectronics NTE Electronics, Inc onsemi NTE Electronics, Inc Harris Corporation
Product Status Active Active Active Active Active Active Active Active Obsolete Active Active
Transistor Type PNP PNP PNP NPN NPN PNP PNP NPN PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 3 A 10 A 3 A 25 A 1 A 25 A 10 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V 40 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A 1.2V @ 375mA, 3A - 1.2V @ 375mA, 3A - 700mV @ 125mA, 1A 4V @ 5A, 25A - 700mV @ 125mA, 1A 700mV @ 125mA, 1A 700mV @ 125mA, 1A
Current - Collector Cutoff (Max) 300µA 300µA - 200µA - 300µA 1mA - 300µA 300µA 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 4V 10 @ 3A, 4V 100 @ 3A, 4V 10 @ 3A, 4V 10 @ 15A, 4V 15 @ 1A, 4V 10 @ 15A, 4V 100 @ 3A, 4V 15 @ 1A, 4V 15 @ 1A, 4V 40 @ 200mA, 4V
Power - Max 2 W 2 W 80 W 40 W 125 W 2 W 125 W 80 W 2 W 2 W 2 W
Frequency - Transition - - 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz - 3MHz
Operating Temperature 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-218-3 TO-220-3 TO-218-3 TO-220-3 TO-247-3 TO-218-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-218 TO-220 TO-218 TO-220 TO-247-3 TO-218 TO-220 TO-220 TO-220

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