Overview
The SS8050-C-AP is an NPN epitaxial silicon transistor manufactured by onsemi, although it is often distributed and sold under various brands including Micro Commercial Co. This transistor is designed for general-purpose applications and is known for its reliability and performance in a variety of electronic circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 40 | V |
| Collector-Emitter Voltage (VCEO) | 25 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current (IC) | 1.5 | A |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 to 150 | °C |
| Power Dissipation (PD) | 1 | W |
| Thermal Resistance, Junction-to-Ambient (RJA) | 125 | °C/W |
| Frequency - Transition | 100 | MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 1V | |
| Package / Case | TO-92-3 |
Key Features
- Pb-free, Halogen-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
- High collector current of up to 1.5 A, making it suitable for power amplification and other high-current applications.
- Low Vce saturation voltage, typically 500 mV, which enhances efficiency in switching and amplification circuits.
- High DC current gain (hFE) of at least 120, providing reliable amplification performance.
- Complementary to the SS8550 transistor, allowing for balanced circuit designs.
Applications
The SS8050-C-AP transistor is versatile and can be used in a variety of applications, including:
- Output amplifiers in portable radios, particularly in Class B push-pull operations.
- General-purpose switching and amplification circuits.
- Automotive and industrial control systems where high reliability and performance are required.
- Audio amplifiers and other electronic devices that need robust and efficient transistor performance.
Q & A
- What is the maximum collector current of the SS8050-C-AP transistor? The maximum collector current is 1.5 A.
- What is the collector-emitter breakdown voltage of the SS8050-C-AP? The collector-emitter breakdown voltage is 25 V.
- Is the SS8050-C-AP RoHS compliant? Yes, the SS8050-C-AP is Pb-free, Halogen-free, and RoHS compliant.
- What is the typical DC current gain (hFE) of the SS8050-C-AP? The typical DC current gain (hFE) is at least 120 at 100 mA and 1 V.
- What is the maximum junction temperature for the SS8050-C-AP? The maximum junction temperature is 150 °C.
- What is the package type of the SS8050-C-AP? The package type is TO-92-3.
- Can the SS8050-C-AP be used in high-frequency applications? Yes, it has a transition frequency of up to 100 MHz.
- Is the SS8050-C-AP suitable for automotive applications? Yes, it is suitable for automotive and industrial control systems due to its high reliability and performance.
- What is the Vce saturation voltage of the SS8050-C-AP? The Vce saturation voltage is typically 500 mV at 80 mA and 800 mA.
- Is there a complementary transistor to the SS8050-C-AP? Yes, the SS8550 is the complementary transistor to the SS8050-C-AP.
