BCP56TA
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Diodes Incorporated BCP56TA

Manufacturer No:
BCP56TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP56TA is a medium power NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is part of the BCP54/55/56 series, known for its high performance and reliability in various electronic applications. The BCP56TA is designed to handle high continuous collector currents and is suitable for medium power switching and amplification tasks.

Key Specifications

CharacteristicSymbolMinTypMaxUnitTest Condition
Collector-Base Breakdown VoltageBVCBO--100VIC = 100µA
Collector-Emitter Breakdown VoltageBVCEO--80VIC = 10mA
Emitter-Base Breakdown VoltageBVEBO--5VIE = 10µA
Continuous Collector CurrentIC--1A-
Peak Pulse Collector CurrentICM--2A-
Power DissipationPD--2W-
Thermal Resistance, Junction to AmbientRθJA--62°C/W-
Operating and Storage Temperature RangeTJ, TSTG-65-150°C-
DC Current GainhFE2540250-IC = 150mA, VCE = 2V (16 gain group)
Collector-Emitter Saturation VoltageVCE(sat)--0.5VIC = 500mA, IB = 50mA

Key Features

  • High Continuous Collector Current: Up to 1A continuous collector current and 2A peak pulse current.
  • Low Saturation Voltage: VCE(sat) < 500mV @ 0.5A, ensuring efficient operation.
  • High Breakdown Voltages: BVCEO > 80V, BVCBO > 100V, and VEBO > 5V.
  • Complementary PNP Types: Available with complementary PNP types (BCP51, 52, and 53).
  • Environmental Compliance: Totally lead-free, fully RoHS compliant, halogen- and antimony-free, and adheres to the “Green” device policy.
  • Thermal Performance: 2W power dissipation with thermal resistance from junction to ambient (RθJA) of 62°C/W.

Applications

The BCP56TA is suitable for a variety of applications, including:

  • Medium Power Switching and Amplification: Ideal for medium power switching and amplification tasks in electronic circuits.
  • AF Driver and Output Stages: Used in audio frequency driver and output stages due to its high current handling and low saturation voltage.
  • Automotive Applications: Suitable for automotive applications requiring specific change control and high reliability.

Q & A

  1. What is the maximum continuous collector current of the BCP56TA?
    The maximum continuous collector current is 1A.
  2. What is the peak pulse collector current of the BCP56TA?
    The peak pulse collector current is 2A.
  3. What is the collector-emitter breakdown voltage of the BCP56TA?
    The collector-emitter breakdown voltage (BVCEO) is up to 80V.
  4. What is the power dissipation of the BCP56TA?
    The power dissipation is up to 2W.
  5. Is the BCP56TA RoHS compliant?
    Yes, the BCP56TA is fully RoHS compliant and lead-free.
  6. What are the operating and storage temperature ranges for the BCP56TA?
    The operating and storage temperature range is -65°C to +150°C.
  7. What is the typical DC current gain (hFE) of the BCP56TA?
    The typical DC current gain (hFE) is 40, with a range of 25 to 250 for the 16 gain group.
  8. What is the collector-emitter saturation voltage of the BCP56TA?
    The collector-emitter saturation voltage (VCE(sat)) is less than 0.5V at 0.5A.
  9. What are some common applications of the BCP56TA?
    Common applications include medium power switching, amplification, AF driver and output stages, and automotive applications.
  10. Is the BCP56TA available in a complementary PNP type?
    Yes, the BCP56TA has complementary PNP types (BCP51, 52, and 53).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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Similar Products

Part Number BCP56TA BCP56TF BCP56TX BCP53TA BCP54TA BCP55TA
Manufacturer Diodes Incorporated Nexperia USA Inc. Nexperia USA Inc. Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN NPN PNP NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 2 W 1.8 W 1.8 W 2 W 2 W 2 W
Frequency - Transition 150MHz 100MHz 100MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223 SOT-223 SOT-223-3 SOT-223-3 SOT-223-3

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