Overview
The 2SC5658M3T5G is an NPN silicon general-purpose amplifier transistor produced by onsemi. This device is designed for low power surface mount applications where board space is limited. It is housed in the SOT-723 package, making it ideal for compact electronic designs. The transistor is suitable for a wide range of general-purpose amplifier applications due to its high current gain and low saturation voltage.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Voltage | V(BR)CEO | 50 | - | - | Vdc |
| Emitter-Base Voltage | V(BR)EBO | 7.0 | - | - | Vdc |
| Collector Current - Continuous | IC | - | - | 150 | mAdc |
| Power Dissipation | PD | - | - | 260 | mW |
| Junction Temperature | TJ | - | - | 150 | °C |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C |
| Transition Frequency | fT | - | 180 | - | MHz |
| DC Current Gain (hFE) | hFE | 120 | 215 | 460 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.4 | Vdc |
Key Features
- Reduces board space due to its compact SOT-723 package.
- High DC current gain (hFE) ranging from 120 to 460.
- Low collector-emitter saturation voltage (VCE(sat)) of less than 0.5 V.
- Excellent ESD performance: Human Body Model ≥ 2000 V, Machine Model ≥ 200 V.
- Available in 8 mm, 7-inch/3000 unit tape and reel.
- NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free devices.
Applications
The 2SC5658M3T5G is suitable for a variety of general-purpose amplifier applications, including but not limited to:
- Audio amplifiers
- Switching circuits
- Low power DC-DC converters
- Automotive electronics
- Consumer electronics where compact design is crucial.
Q & A
- What is the package type of the 2SC5658M3T5G transistor?
The 2SC5658M3T5G transistor is housed in the SOT-723 package. - What is the maximum collector current of the 2SC5658M3T5G?
The maximum collector current is 150 mA. - What is the maximum junction temperature for the 2SC5658M3T5G?
The maximum junction temperature is 150°C. - What is the typical DC current gain (hFE) of the 2SC5658M3T5G?
The typical DC current gain (hFE) is 215. - Is the 2SC5658M3T5G Pb-free?
Yes, the 2SC5658M3T5G is a Pb-free device. - What is the transition frequency (fT) of the 2SC5658M3T5G?
The transition frequency (fT) is 180 MHz. - What are the ESD protection levels for the 2SC5658M3T5G?
The ESD protection levels are Human Body Model ≥ 2000 V and Machine Model ≥ 200 V. - Is the 2SC5658M3T5G AEC-Q101 qualified?
Yes, the 2SC5658M3T5G is AEC-Q101 qualified and PPAP capable. - What is the collector-emitter saturation voltage (VCE(sat)) of the 2SC5658M3T5G?
The collector-emitter saturation voltage (VCE(sat)) is less than 0.4 V. - What is the storage temperature range for the 2SC5658M3T5G?
The storage temperature range is -55°C to +150°C.
